L. Messick

680 citations

30 papers · 538 indexed · h-index 13

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Radio Frequency Integrated Circuit Design

Papers in

Electrical and Electronic Engineering 27
- Semiconductor materials and devices 16
- Advancements in Semiconductor Devices and Circuit Design 14
- Radio Frequency Integrated Circuit Design 12
- Photonic and Optical Devices 3
- Integrated Circuits and Semiconductor Failure Analysis 2
Atomic and Molecular Physics, and Optics 13
- Semiconductor materials and interfaces 8
- Semiconductor Quantum Structures and Devices 7

Co-authors: D. L. Lile R. Glosser William C. Walker Carl R. Zeisse D. A. Collins L. G. Meiners A. R. Clawson P. Saunier
Journals: IEEE Electron Device Letters (5 papers)IEEE Transactions on Microwave Theory and Techniques (3 papers)Journal of Applied Physics (3 papers)Solid-State Electronics (2 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: United States Germany

In The Last Decade

L. Messick

29 papers receiving 482 citations

Peers

Countries citing papers authored by L. Messick

Since Specialization

Citations

This map shows the geographic impact of L. Messick's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Messick with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Messick more than expected).

Fields of papers citing papers by L. Messick

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Messick. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Messick. The network helps show where L. Messick may publish in the future.

Co-authorship network

The 19 scholars most cited alongside L. Messick, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. Messick Line = papers co-authored together L. Messick links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Planar Fully Ion-Implanted High Power InP MISFETs L. Messick, K Yoshino, D. A. Collins	2005	0
2	InGaAs/InP submicron gate microwave power transistors for 20 GHz applications Gregory A. Johnson, M. Biedenbender, Vikram Kapoor, L. Messick, K Yoshino, D. Schmitz, H. Jürgensen	2002	1
3	Indium gallium arsenide microwave power transistors IEEE Transactions on Microwave Theory and Techniques ·Gregory A. Johnson, Vikram Kapoor, Mihai Svasta, L. Messick, K Yoshino, R. A. Stall, Salwa Abdul-Ghani Abdul-Rahman Al-Shamiri	1991	10
4	Submicron-gate InP power MISFET's with improved output power density at 18 and 20 GHz IEEE Transactions on Microwave Theory and Techniques ·M. Biedenbender, Vikram Kapoor, Eric Van Denhaute, L. Messick, K Yoshino, D. Schmitz, H. Jürgensen	1991	4
5	High microwave power InP MISFETs with one micron and submicron gates Mihai Svasta, Vikram Kapoor, M. Biedenbender, L. Messick, K Yoshino	1990	2
6	An InP MISFET with a power density of 1.8 W/mm at 30 GHz IEEE Electron Device Letters ·P. Saunier, K Yoshino, L. Messick, Marziyeh Khatibzadeh	1990	21
7	Ion-implanted high microwave power indium phosphide transistors IEEE Transactions on Microwave Theory and Techniques ·M. Biedenbender, Vikram Kapoor, L. Messick, K Yoshino	1989	4
8	Proceedings of the first international conference on indium phosphide and related materials for advanced electronic and optical devices OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·悠介郡, L. Messick	1989	2
9	A stable indium-phosphide diffused junction field-effect transistor with high gain and low leakage IEEE Electron Device Letters ·Carl R. Zeisse, K Yoshino, L. Messick, P. Saunier, H. G. Beutler	1989	6
10	A 64-bit 800-MHz insulated-gate CCD on InP IEEE Electron Device Letters ·L. Messick, D. A. Collins, D. L. Lile	1986	7
11	Low-power high-speed InP MISFET direct-coupled FET logic IEEE Transactions on Electron Devices ·L. Messick	1984	15
12	Radiation tolerant direct-coupled MISFET logic on InP L. Messick, D. L. Lile, M. J. Taylor, Carl R. Zeisse, D. A. Collins	1983	1
13	A high-speed monolithic InP MISFET integrated logic inverter IEEE Transactions on Electron Devices ·L. Messick	1981	27
14	A D.C. to 16 GHz indium phosphide MISFET Solid-State Electronics ·L. Messick	1980	30
15	Interface formation of deposited insulator layers on GaAs and InP Thin Solid Films ·C. W. Wilmsen, hee gyoun Lee, John F. Wager, Rizdhita Dhian Andriana, L. Messick	1979	17
16	n -channel inversion-mode InP m.i.s.f.e.t. Electronics Letters ·D. L. Lile, D. A. Collins, L. G. Meiners, L. Messick	1978	64
17	Electrical properties of anodic and pyrolytic dielectrics on gallium arsenide Journal of Vacuum Science and Technology ·Carl R. Zeisse, L. Messick, D. L. Lile	1977	71
18	InP/SiO2 MIS structure Journal of Applied Physics ·L. Messick	1976	61
19	A GaAs/SixOyNz MIS FET Journal of Applied Physics ·L. Messick	1976	21
20	Direct and Temperature-Modulated Reflectance Spectra of MnO, CoO, and NiO Physical review. B, Solid state ·L. Messick, William C. Walker, R. Glosser	1972	71

About L. Messick

L. Messick is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Ceramics and Composites, Condensed Matter Physics and Polymers and Plastics, having authored 30 papers that have together received 538 indexed citations. Recurring topics across this work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers), Radio Frequency Integrated Circuit Design (12 papers), Semiconductor materials and interfaces (8 papers), Semiconductor Quantum Structures and Devices (7 papers), Photonic and Optical Devices (3 papers), Integrated Circuits and Semiconductor Failure Analysis (2 papers) and Glass properties and applications (2 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (338 citations), Electrical and Electronic Engineering (447 citations), Surfaces, Coatings and Films (38 citations), Condensed Matter Physics (62 citations) and Materials Chemistry (166 citations). L. Messick has collaborated with scholars based in United States and Germany. Frequent co-authors include D. L. Lile, R. Glosser, William C. Walker, Carl R. Zeisse, D. A. Collins, L. G. Meiners, A. R. Clawson, P. Saunier, Marziyeh Khatibzadeh and Vikram Kapoor. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Microwave Theory and Techniques, Journal of Applied Physics, Solid-State Electronics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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