Peter W. Deelman

1.5k total citations · 1 hit paper
36 papers, 1.1k citations indexed

About

Peter W. Deelman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Astronomy and Astrophysics. According to data from OpenAlex, Peter W. Deelman has authored 36 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 7 papers in Astronomy and Astrophysics. Recurrent topics in Peter W. Deelman's work include Semiconductor Quantum Structures and Devices (15 papers), Semiconductor materials and devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). Peter W. Deelman is often cited by papers focused on Semiconductor Quantum Structures and Devices (15 papers), Semiconductor materials and devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). Peter W. Deelman collaborates with scholars based in United States. Peter W. Deelman's co-authors include Mark F. Gyure, Matthew Borselli, A. T. Hunter, K.S. Holabird, Thaddeus D. Ladd, Richard S. Ross, A. Schmitz, Patrick Fay, R. Rajavel and Bing Huang and has published in prestigious journals such as Nature, Physical Review Letters and Applied Physics Letters.

In The Last Decade

Peter W. Deelman

35 papers receiving 1.1k citations

Hit Papers

Coherent singlet-triplet oscillations in a silicon-based ... 2012 2026 2016 2021 2012 100 200 300

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Peter W. Deelman United States 14 826 722 243 176 131 36 1.1k
Linus A. Fetter United States 14 630 0.8× 824 1.1× 53 0.2× 187 1.1× 133 1.0× 46 1.2k
D. Hägele Germany 18 1.3k 1.6× 683 0.9× 103 0.4× 404 2.3× 348 2.7× 61 1.6k
Lina Chang China 8 479 0.6× 361 0.5× 117 0.5× 200 1.1× 156 1.2× 18 778
J. P. Griffiths United Kingdom 15 1.1k 1.3× 467 0.6× 195 0.8× 227 1.3× 336 2.6× 44 1.3k
S. N. Dorenbos Netherlands 16 586 0.7× 582 0.8× 401 1.7× 84 0.5× 95 0.7× 24 979
K. Yu. Arutyunov Finland 16 919 1.1× 215 0.3× 92 0.4× 826 4.7× 216 1.6× 58 1.2k
A. Anthore France 19 1.2k 1.5× 427 0.6× 206 0.8× 505 2.9× 270 2.1× 31 1.4k
Travis M. Eiles United States 13 548 0.7× 376 0.5× 72 0.3× 323 1.8× 60 0.5× 26 867
Xiaolong Hu China 17 516 0.6× 639 0.9× 363 1.5× 71 0.4× 121 0.9× 73 1.0k
R. Shaikhaidarov United Kingdom 14 424 0.5× 133 0.2× 150 0.6× 210 1.2× 70 0.5× 35 555

Countries citing papers authored by Peter W. Deelman

Since Specialization
Citations

This map shows the geographic impact of Peter W. Deelman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Peter W. Deelman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Peter W. Deelman more than expected).

Fields of papers citing papers by Peter W. Deelman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Peter W. Deelman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Peter W. Deelman. The network helps show where Peter W. Deelman may publish in the future.

Co-authorship network of co-authors of Peter W. Deelman

This figure shows the co-authorship network connecting the top 25 collaborators of Peter W. Deelman. A scholar is included among the top collaborators of Peter W. Deelman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Peter W. Deelman. Peter W. Deelman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Richardson, Christopher J. K., Clayton Jackson, L. F. Edge, & Peter W. Deelman. (2017). High-resolution x-ray reflection Fourier analysis of metamorphic Si/SiGe quantum wells. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 35(2). 1 indexed citations
2.
Deelman, Peter W., L. F. Edge, & Clayton Jackson. (2016). Metamorphic materials for quantum computing. MRS Bulletin. 41(3). 224–230. 9 indexed citations
3.
Leonard, Donovan N., Ondrej Dyck, Jonathan D. Poplawsky, et al.. (2016). Quantification of Atomic Arrangements at Heterostructure Interfaces. Microscopy and Microanalysis. 22(S3). 1502–1503.
4.
Wang, Ke, et al.. (2013). Charge Relaxation in a Single-ElectronSi/SiGeDouble Quantum Dot. Physical Review Letters. 111(4). 46801–46801. 65 indexed citations
5.
Maune, Brett, Matthew Borselli, Bing Huang, et al.. (2012). Coherent singlet-triplet oscillations in a silicon-based double quantum dot. Nature. 481(7381). 344–347. 396 indexed citations breakdown →
6.
Zhang, Ze, R. Rajavel, Peter W. Deelman, & Patrick Fay. (2011). Sub-Micron Area Heterojunction Backward Diode Millimeter-Wave Detectors With 0.18 ${\rm pW/Hz}^{1/2}$ Noise Equivalent Power. IEEE Microwave and Wireless Components Letters. 21(5). 267–269. 69 indexed citations
7.
Su, Ning, et al.. (2009). Sb-heterostructure backward diode detectors with ultrathin tunnel barriers. 145–146. 3 indexed citations
8.
Su, Ning, R. Rajavel, Peter W. Deelman, J. N. Schulman, & Patrick Fay. (2008). Sb-Heterostructure Millimeter-Wave Detectors With Reduced Capacitance and Noise Equivalent Power. IEEE Electron Device Letters. 29(6). 536–539. 54 indexed citations
9.
Micovic, M., P. Hashimoto, Ming Hu, et al.. (2005). GaN double ifeterojunction field effect transistor for microwave and millimeterwave power applications. 807–810. 73 indexed citations
10.
Moyer, H. P., Tsung-Yuan Hsu, R. Bowen, et al.. (2005). Low noise Sb-heterostructure diode detectors for W-band imaging arrays without RF amplification. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5789. 84–84. 3 indexed citations
11.
Moyer, H. P., Tsung-Yuan Hsu, R. Bowen, et al.. (2005). Optimization of sb-heterostructure diode for low noise detection. 14. 263–264. 1 indexed citations
12.
Thomas, Steve, et al.. (2004). High-speed 6.1 angstrom InAs HBT devices and circuits. 344–345. 2 indexed citations
13.
Thomas, S., D. H. Chow, P. D. Brewer, et al.. (2004). Fabrication processes for high performance InAs-based HBTs. 177–178. 1 indexed citations
14.
Royter, Y., K. Elliott, Peter W. Deelman, et al.. (2004). High frequency InAs-channel HEMTs for low power ICs. 30.7.1–30.7.4. 9 indexed citations
15.
Moon, J. S., D. H. Chow, J. N. Schulman, et al.. (2004). Experimental demonstration of split side-gated resonant interband tunneling devices. Applied Physics Letters. 85(4). 678–680. 13 indexed citations
16.
Thomas, S., K. Elliott, D. H. Chow, et al.. (2003). Fabrication and performance of InAs-based heterojunction bipolar transistors. 38. 26–31. 5 indexed citations
17.
Deelman, Peter W., Shouleh Nikzad, & Morley M. Blouke. (2000). Delta-doped CCDs with integrated UV coatings. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3965. 462–462. 1 indexed citations
18.
Deelman, Peter W., L. J. Schowalter, & Thomas Thundat. (1997). In situ measurements of temperature-dependent strain relaxation of Ge/Si(111). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 15(3). 930–935. 16 indexed citations
19.
Deelman, Peter W., Thomas Thundat, & L. J. Schowalter. (1996). AFM and RHEED study of Ge islanding on Si(111) and Si(100). Applied Surface Science. 104-105. 510–515. 31 indexed citations
20.
Deelman, Peter W., Thomas Thundat, & L. J. Schowalter. (1994). Ge Nanocrystals Grown on Si(111) by Molecular Beam Epitaxy with and without CaF2 Buffer Layers. MRS Proceedings. 358. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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