I. Berishev

556 total citations
36 papers, 448 citations indexed

About

I. Berishev is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, I. Berishev has authored 36 papers receiving a total of 448 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 18 papers in Condensed Matter Physics and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in I. Berishev's work include GaN-based semiconductor devices and materials (18 papers), Semiconductor materials and devices (13 papers) and Photonic and Optical Devices (9 papers). I. Berishev is often cited by papers focused on GaN-based semiconductor devices and materials (18 papers), Semiconductor materials and devices (13 papers) and Photonic and Optical Devices (9 papers). I. Berishev collaborates with scholars based in United States, Russia and Mexico. I. Berishev's co-authors include C. A. Tran, R. F. Karlicek, A. Bensaoula, Wojciech M. Jadwisienczak, H. J. Łożykowski, I.G. Brown, A. Ovtchinnikov, Valentin Gapontsev, N. T. Moshegov and Irene Rusakova and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

I. Berishev

33 papers receiving 426 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
I. Berishev United States 10 281 238 161 137 122 36 448
Kamran Forghani United States 15 279 1.0× 274 1.2× 202 1.3× 138 1.0× 228 1.9× 44 531
V. Bousquet United Kingdom 12 359 1.3× 267 1.1× 226 1.4× 145 1.1× 269 2.2× 35 533
L. Considine Ireland 12 316 1.1× 344 1.4× 270 1.7× 159 1.2× 282 2.3× 40 638
T. Wethkamp Germany 11 186 0.7× 244 1.0× 181 1.1× 127 0.9× 193 1.6× 14 435
S. Ruffenach France 12 305 1.1× 201 0.8× 278 1.7× 178 1.3× 263 2.2× 27 542
O. Imafuji Japan 12 262 0.9× 306 1.3× 116 0.7× 76 0.6× 277 2.3× 35 455
C.J. Deatcher United Kingdom 10 335 1.2× 125 0.5× 162 1.0× 140 1.0× 152 1.2× 12 407
N. M. Shmidt Russia 12 304 1.1× 191 0.8× 136 0.8× 105 0.8× 213 1.7× 70 437
J.-Y. Duboz France 9 274 1.0× 142 0.6× 136 0.8× 122 0.9× 169 1.4× 20 363
T. W. Weeks United States 12 598 2.1× 324 1.4× 192 1.2× 228 1.7× 207 1.7× 23 674

Countries citing papers authored by I. Berishev

Since Specialization
Citations

This map shows the geographic impact of I. Berishev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Berishev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Berishev more than expected).

Fields of papers citing papers by I. Berishev

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Berishev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Berishev. The network helps show where I. Berishev may publish in the future.

Co-authorship network of co-authors of I. Berishev

This figure shows the co-authorship network connecting the top 25 collaborators of I. Berishev. A scholar is included among the top collaborators of I. Berishev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. Berishev. I. Berishev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Moshegov, N. T., et al.. (2025). Next-generation high-power laser diode pump modules. 12–12.
2.
Moshegov, N. T., et al.. (2019). Highly-efficient high-power pumps for QCW fiber lasers. 13–13. 7 indexed citations
3.
Gapontsev, Valentin, et al.. (2014). High-volume manufacturing of 8XXnm-10XXnm single emitter pumps by MBE growth technique. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8965. 89650N–89650N. 8 indexed citations
4.
Gapontsev, Valentin, et al.. (2012). High-brightness 975-nm pumps with ultra-stable wavelength stabilization. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8241. 82410O–82410O. 2 indexed citations
5.
Gapontsev, Valentin, I. Berishev, Vadim Chuyanov, et al.. (2008). 8xx - 10xx nm highly efficient single emitter pumps. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6876. 68760I–68760I. 5 indexed citations
6.
Gapontsev, Valentin, et al.. (2006). 9xx nm single emitter pumps for multi-kW systems. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6104. 61040K–61040K. 10 indexed citations
7.
Gapontsev, Valentin, et al.. (2005). High-efficiency 970-nm multimode pumps. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5711. 42–42. 12 indexed citations
8.
Kim, Esther, et al.. (2002). GaN thin film growth on GaAs (001) by CBE and plasma-assisted MBE. Journal of Crystal Growth. 243(3-4). 456–462. 5 indexed citations
9.
Jadwisienczak, Wojciech M., H. J. Łożykowski, I. Berishev, A. Bensaoula, & I.G. Brown. (2001). Visible emission from AlN doped with Eu and Tb ions. Journal of Applied Physics. 89(8). 4384–4390. 78 indexed citations
10.
Starikov, D., et al.. (2000). Diode structures based on p-GaN for optoelectronic applications in the near-ultraviolet range of the spectrum. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(6). 2620–2623. 1 indexed citations
11.
Tempez, A., et al.. (2000). Etch characteristics of GaN and BN materials in chlorine-based plasmas. Journal of Electronic Materials. 29(9). 1079–1083. 14 indexed citations
12.
Berishev, I., et al.. (1999). Mg doping studies of electron cyclotron resonance molecular beam epitaxy of GaN thin films. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(4). 2166–2169. 8 indexed citations
13.
Tempez, A., et al.. (1999). Photoenhanced reactive ion etching of III–V nitrides in BCl3/Cl2/Ar/N2 plasmas. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(4). 2209–2213. 9 indexed citations
14.
Berishev, I., et al.. (1998). Obtención e investigación de heteroestructuras láser InGaAsP/GaAs e InGaAsP/InP con emisión de onda de 0'8[... ]m. Y 1'3[... ]m.. Revista Mexicana de Física. 44(3). 282–289. 1 indexed citations
15.
Berishev, I., et al.. (1998). Field emission properties of GaN films on Si(111). Applied Physics Letters. 73(13). 1808–1810. 41 indexed citations
16.
Kim, Esther, I. Berishev, A. Bensaoula, et al.. (1998). Surface composition and morphology of chemical beam epitaxy grown GaN thin films. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1270–1274. 4 indexed citations
17.
Berishev, I., et al.. (1996). ChemInform Abstract: H2O2:HF:C4O6H6 (Tartaric Acid):H2O Etching System for Chemical Polishing of GaSb.. ChemInform. 27(4). 1 indexed citations
18.
Berishev, I., et al.. (1995). H 2 O 2 :  HF  :  C 4 O 6 H 6    ( Tartaric Acid )  :  H 2 O  Etching System for Chemical Polishing of GaSb. Journal of The Electrochemical Society. 142(10). L189–L191. 17 indexed citations
19.
Berishev, I., et al.. (1993). Semiconductor generator of binary words formed by picosecond optical pulses. 19(9). 538–540.
20.
Berishev, I., et al.. (1989). Parametric regeneration of ultrashort light pulses in a medium with quadratic nonlinearity. 15. 82–86. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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