K. K. Choi

433 total citations
20 papers, 375 citations indexed

About

K. K. Choi is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, K. K. Choi has authored 20 papers receiving a total of 375 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Condensed Matter Physics, 14 papers in Atomic and Molecular Physics, and Optics and 7 papers in Electrical and Electronic Engineering. Recurrent topics in K. K. Choi's work include GaN-based semiconductor devices and materials (20 papers), Semiconductor Quantum Structures and Devices (13 papers) and ZnO doping and properties (7 papers). K. K. Choi is often cited by papers focused on GaN-based semiconductor devices and materials (20 papers), Semiconductor Quantum Structures and Devices (13 papers) and ZnO doping and properties (7 papers). K. K. Choi collaborates with scholars based in South Korea and United States. K. K. Choi's co-authors include Tae‐Yeon Seong, Joon Seop Kwak, K. H. Ha, H. S. Paek, T. Sakong, Han‐Youl Ryu, J. K. Son, Youngje Sung, Okhyun Nam and Sang Youl Lee and has published in prestigious journals such as Applied Physics Letters, Optics Letters and Thin Solid Films.

In The Last Decade

K. K. Choi

20 papers receiving 360 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. K. Choi South Korea 9 351 221 144 117 106 20 375
Tsunenori Asatsuma Japan 12 355 1.0× 290 1.3× 167 1.2× 154 1.3× 118 1.1× 27 455
Mark Beeler France 12 303 0.9× 193 0.9× 123 0.9× 136 1.2× 137 1.3× 15 387
T. Tojyo Japan 12 363 1.0× 321 1.5× 183 1.3× 97 0.8× 61 0.6× 19 419
Masaaki Onomura Japan 8 335 1.0× 268 1.2× 164 1.1× 95 0.8× 104 1.0× 20 404
Anna Feduniewicz‐Żmuda Poland 15 410 1.2× 264 1.2× 182 1.3× 146 1.2× 142 1.3× 44 475
Shu Goto Japan 10 419 1.2× 343 1.6× 230 1.6× 93 0.8× 65 0.6× 22 462
Marc Schillgalies Germany 11 369 1.1× 363 1.6× 229 1.6× 62 0.5× 72 0.7× 19 460
Krzesimir Nowakowski-Szkudlarek Poland 12 283 0.8× 203 0.9× 196 1.4× 77 0.7× 79 0.7× 40 351
Kei Kaneko Japan 9 362 1.0× 366 1.7× 193 1.3× 97 0.8× 76 0.7× 21 494
T. Jang South Korea 13 426 1.2× 286 1.3× 216 1.5× 117 1.0× 140 1.3× 28 486

Countries citing papers authored by K. K. Choi

Since Specialization
Citations

This map shows the geographic impact of K. K. Choi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. K. Choi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. K. Choi more than expected).

Fields of papers citing papers by K. K. Choi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. K. Choi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. K. Choi. The network helps show where K. K. Choi may publish in the future.

Co-authorship network of co-authors of K. K. Choi

This figure shows the co-authorship network connecting the top 25 collaborators of K. K. Choi. A scholar is included among the top collaborators of K. K. Choi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. K. Choi. K. K. Choi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lee, Sang Youl, et al.. (2011). Improved Output Power of GaN-Based Vertical Light Emitting Diodes Fabricated with Current Blocking Region Formed by O2Plasma Treatment. Japanese Journal of Applied Physics. 50(7R). 76504–76504. 4 indexed citations
2.
Lee, Sang Youl, et al.. (2011). Enhancement of light output power of GaN-based vertical light emitting diodes by optimizing n-GaN thickness. Microelectronic Engineering. 88(10). 3164–3167. 4 indexed citations
3.
Lee, Sang Youl, et al.. (2011). Improved Output Power of GaN-Based Vertical Light Emitting Diodes Fabricated with Current Blocking Region Formed by O2Plasma Treatment. Japanese Journal of Applied Physics. 50(7R). 76504–76504. 2 indexed citations
4.
Lee, Sang Youl, et al.. (2011). Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(4). 4 indexed citations
5.
Lee, Sang Youl, et al.. (2011). Improved Electrostatic Discharge Protection in GaN-Based Vertical Light-Emitting Diodes by an Internal Diode. IEEE Photonics Technology Letters. 23(7). 423–425. 2 indexed citations
6.
Lee, Sang Youl, Young Kyu Jeong, K. K. Choi, et al.. (2010). Improvement of the Light Output Power of GaN-Based Vertical Light Emitting Diodes by a Current Blocking Layer. Electrochemical and Solid-State Letters. 13(7). H237–H237. 16 indexed citations
7.
Lee, Sang Youl, et al.. (2009). Fabrication of High Performance GaN-Based Vertical Light-Emitting Diodes Using a Transparent Conducting Indium Tin Oxide Channel Layer. Electrochemical and Solid-State Letters. 12(9). H322–H322. 4 indexed citations
8.
Lee, Sang Youl, et al.. (2009). Wafer-level fabrication of GaN-based vertical light-emitting diodes using a multi-functional bonding material system. Semiconductor Science and Technology. 24(9). 92001–92001. 40 indexed citations
9.
Kim, Hyonchol, K. K. Choi, Jaehee Cho, et al.. (2008). Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures. Optics Letters. 33(11). 1273–1273. 57 indexed citations
10.
Jang, T., Joon Seop Kwak, Youngje Sung, et al.. (2007). Improved thermal stability of GaN blue laser diode by Ti/Pt/Au, W/Au and Cu bonding layers. Thin Solid Films. 516(6). 1093–1096. 8 indexed citations
11.
Ryu, Han‐Youl, K. H. Ha, K. K. Choi, et al.. (2006). Recent progress of high-power InGaN blue-violet laser diodes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6352. 63521I–63521I. 3 indexed citations
12.
Ryu, Han‐Youl, K. H. Ha, T. Jang, et al.. (2006). Highly stable temperature characteristics of InGaN blue laser diodes. Applied Physics Letters. 89(3). 35 indexed citations
13.
Ryu, Han‐Youl, K. H. Ha, K. K. Choi, et al.. (2006). Single-mode blue-violet laser diodes with low beam divergence and high COD level. IEEE Photonics Technology Letters. 18(9). 1001–1003. 16 indexed citations
14.
Lee, Sung‐Nam, Han‐Youl Ryu, J. K. Son, et al.. (2006). High-power GaN-based blue-violet laser diodes with AlGaN∕GaN multiquantum barriers. Applied Physics Letters. 88(11). 68 indexed citations
15.
Lee, Sung‐Nam, H. S. Paek, Han‐Youl Ryu, et al.. (2006). Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire. Journal of Crystal Growth. 298. 695–698. 2 indexed citations
16.
Nam, Okhyun, K. H. Ha, Han‐Youl Ryu, et al.. (2006). High power AlInGaN-based blue-violet laser diodes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6133. 61330N–61330N. 11 indexed citations
17.
Kwak, Joon Seop, T. Jang, K. K. Choi, et al.. (2004). Fabrication of AlInGaN-based blue-violet laser diode with low input power. physica status solidi (a). 201(12). 2649–2652. 3 indexed citations
18.
Nam, O. H., K. H. Ha, Joon Seop Kwak, et al.. (2004). Characteristics of GaN-based laser diodes for post-DVD applications. physica status solidi (a). 201(12). 2717–2720. 74 indexed citations
19.
Nam, Okhyun, K. H. Ha, Joon Seop Kwak, et al.. (2003). Recent progress of high power GaN‐based violet laser diodes. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2278–2282. 14 indexed citations
20.
Kwak, Joon Seop, Jaehee Cho, Seung‐Hoon Chae, et al.. (2002). Carrier Transport Mechanism of Pd/Pt/Au Ohmic Contacts to p-GaN in InGaN Laser Diode. physica status solidi (a). 194(2). 587–590. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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