W. Pletschen

2.4k total citations
99 papers, 1.9k citations indexed

About

W. Pletschen is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, W. Pletschen has authored 99 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 75 papers in Electrical and Electronic Engineering, 45 papers in Atomic and Molecular Physics, and Optics and 43 papers in Condensed Matter Physics. Recurrent topics in W. Pletschen's work include GaN-based semiconductor devices and materials (43 papers), Semiconductor Quantum Structures and Devices (39 papers) and Semiconductor materials and devices (22 papers). W. Pletschen is often cited by papers focused on GaN-based semiconductor devices and materials (43 papers), Semiconductor Quantum Structures and Devices (39 papers) and Semiconductor materials and devices (22 papers). W. Pletschen collaborates with scholars based in Germany, United States and Netherlands. W. Pletschen's co-authors include J. Schmitz, F. Fuchs, J. Wagner, K. Köhler, O. Ambacher, M. Kunzer, M. Walther, Quankui Yang, E. Ahlswede and P. Koidl and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

W. Pletschen

97 papers receiving 1.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. Pletschen Germany 25 1.4k 941 607 516 319 99 1.9k
D. Ritter Israel 31 3.2k 2.3× 1.4k 1.5× 292 0.5× 838 1.6× 525 1.6× 233 3.5k
C. Meier Germany 22 892 0.6× 1.1k 1.2× 346 0.6× 724 1.4× 610 1.9× 97 2.1k
E. Towe United States 22 1.4k 1.0× 1.3k 1.4× 365 0.6× 1.3k 2.6× 449 1.4× 111 2.5k
M. E. Twigg United States 28 1.5k 1.1× 815 0.9× 523 0.9× 804 1.6× 413 1.3× 156 2.3k
S. L. Rumyantsev United States 28 2.7k 2.0× 1.2k 1.3× 1.3k 2.2× 1.2k 2.4× 535 1.7× 139 3.8k
D. L. Rode United States 20 1.2k 0.8× 1.2k 1.3× 296 0.5× 636 1.2× 193 0.6× 62 1.8k
A. Passaseo Italy 28 1.3k 0.9× 1.5k 1.6× 360 0.6× 724 1.4× 1.2k 3.8× 201 2.9k
A. G. Schrott United States 26 1.4k 1.0× 304 0.3× 204 0.3× 1.1k 2.2× 238 0.7× 87 2.2k
Sameer Chhajed United States 19 1.1k 0.8× 732 0.8× 1.1k 1.8× 716 1.4× 494 1.5× 29 2.1k
Christoph Cobet Germany 26 779 0.6× 558 0.6× 772 1.3× 1.0k 1.9× 501 1.6× 101 2.1k

Countries citing papers authored by W. Pletschen

Since Specialization
Citations

This map shows the geographic impact of W. Pletschen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Pletschen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Pletschen more than expected).

Fields of papers citing papers by W. Pletschen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Pletschen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Pletschen. The network helps show where W. Pletschen may publish in the future.

Co-authorship network of co-authors of W. Pletschen

This figure shows the co-authorship network connecting the top 25 collaborators of W. Pletschen. A scholar is included among the top collaborators of W. Pletschen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Pletschen. W. Pletschen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Köhler, K., W. Pletschen, Lutz Kirste, et al.. (2021). Leakage mechanism in Al x Ga1−x N/GaN heterostructures with AlN interlayer. Semiconductor Science and Technology. 37(2). 25016–25016. 2 indexed citations
2.
Köhler, K., et al.. (2015). Admittance–voltage profiling of AlxGa1−xN/GaN heterostructures: Frequency dependence of capacitance and conductance. Journal of Applied Physics. 118(20). 4 indexed citations
3.
Hees, Jakob, W. Pletschen, R. E. Sah, et al.. (2014). Elastic properties of ultrathin diamond/AlN membranes. Thin Solid Films. 558. 267–271. 7 indexed citations
4.
Passow, T., M. Kunzer, W. Pletschen, et al.. (2013). High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes. Japanese Journal of Applied Physics. 52(8S). 08JG16–08JG16. 5 indexed citations
5.
Pletschen, W., et al.. (2012). CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors. Journal of Biotechnology. 163(4). 354–361. 9 indexed citations
6.
Hees, Jakob, W. Pletschen, R. E. Sah, et al.. (2012). Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films. Nanotechnology. 24(2). 25601–25601. 45 indexed citations
7.
Kunzer, M., Christian Goßler, K. Köhler, et al.. (2012). Laser processing of gallium nitride–based light-emitting diodes with ultraviolet picosecond laser pulses. Optical Engineering. 51(11). 114301–114301. 12 indexed citations
8.
Köhler, K., S. Müller, Patrick Waltereit, et al.. (2011). Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content. Journal of Applied Physics. 109(5). 5 indexed citations
9.
Passow, T., W. Pletschen, M. Kunzer, et al.. (2011). Efficient 350 nm LEDs on low edge threading dislocation density AlGaN buffer layers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7954. 79540Q–79540Q. 2 indexed citations
10.
Lebedev, V., et al.. (2011). Evaluation of AlN material properties through vibration analysis of thin membranes. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(2). 403–406. 4 indexed citations
11.
Waltereit, Patrick, W. Bronner, R. Quay, et al.. (2010). AlGaN/GaN epitaxy and technology. International Journal of Microwave and Wireless Technologies. 2(1). 3–11. 31 indexed citations
12.
Maroldt, Stephan, Christian Haupt, W. Pletschen, et al.. (2009). Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation. Japanese Journal of Applied Physics. 48(4S). 04C083–04C083. 59 indexed citations
13.
Sommer, F., Fritz Vollrath, M. Kunzer, et al.. (2005). Violet‐emitting diode lasers on low defect density GaN templates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2849–2853. 2 indexed citations
14.
Rattunde, Marcel, J. Schmitz, Rudolf Kiefer, et al.. (2002). Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 μm diode lasers. Applied Physics Letters. 80(22). 4085–4087. 25 indexed citations
15.
Schneider, H., M. Walther, C. Schönbein, et al.. (2000). QWIP FPAs for high-performance thermal imaging. Physica E Low-dimensional Systems and Nanostructures. 7(1-2). 101–107. 53 indexed citations
16.
Fuchs, F., W. Pletschen, J. Schmitz, et al.. (1997). High performance InAs/Ga1-xInxSb superlattice infrared photodiodes. Applied Physics Letters. 71(22). 3251–3253. 172 indexed citations
17.
Pletschen, W., K. H. Bachem, P.J. Tasker, & K. Winkler. (1993). AlGaInP/GaInAs/GaAs Modfet Devices With Self-Aligned P+-GaAs Gate Structure. MRS Proceedings. 326. 1 indexed citations
18.
Bachem, K. H., et al.. (1992). High speed non-selfaligned GaInP/GaAs-TEBT. Electronics Letters. 28(3). 327–328. 16 indexed citations
19.
Bachem, K. H., D. Fekete, W. Pletschen, W. Rothemund, & K. Winkler. (1992). OMVPE-grown (AlxGa1−x)0.5In0.5P/InGaAs MODFET structures: growth procedure and Hall properties. Journal of Crystal Growth. 124(1-4). 817–823. 6 indexed citations
20.
Pletschen, W., et al.. (1984). On the effect of carrier gas on growth conditions in MOCVD reactors; Raman study of local temperature. Journal of Crystal Growth. 68(1). 136–141. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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