R. Driad

1.1k total citations
106 papers, 832 citations indexed

About

R. Driad is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, R. Driad has authored 106 papers receiving a total of 832 indexed citations (citations by other indexed papers that have themselves been cited), including 89 papers in Electrical and Electronic Engineering, 41 papers in Atomic and Molecular Physics, and Optics and 27 papers in Condensed Matter Physics. Recurrent topics in R. Driad's work include Semiconductor Quantum Structures and Devices (36 papers), Radio Frequency Integrated Circuit Design (30 papers) and Semiconductor materials and devices (28 papers). R. Driad is often cited by papers focused on Semiconductor Quantum Structures and Devices (36 papers), Radio Frequency Integrated Circuit Design (30 papers) and Semiconductor materials and devices (28 papers). R. Driad collaborates with scholars based in Germany, Canada and France. R. Driad's co-authors include S. P. McAlister, O. Ambacher, W. R. McKinnon, M. Schlechtweg, Lutz Kirste, J. Rosenzweig, R. Aidam, Kerstin Schneider-Hornstein, R. Lösch and Fouad Benkhelifa and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. Driad

99 papers receiving 798 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Driad Germany 15 604 265 193 159 140 106 832
Todd L. Williamson United States 14 256 0.4× 114 0.4× 250 1.3× 136 0.9× 222 1.6× 36 529
Arnel Salvador Philippines 11 346 0.6× 222 0.8× 311 1.6× 149 0.9× 250 1.8× 43 679
T. L. Smith United States 13 669 1.1× 395 1.5× 51 0.3× 151 0.9× 319 2.3× 61 815
V. V. Fisun Ukraine 8 452 0.7× 490 1.8× 135 0.7× 81 0.5× 150 1.1× 35 694
Takuji Takahashi Japan 16 534 0.9× 597 2.3× 81 0.4× 246 1.5× 212 1.5× 94 840
R. E. Balderas‐Navarro Mexico 14 251 0.4× 352 1.3× 63 0.3× 87 0.5× 160 1.1× 76 535
John S. Colton United States 13 251 0.4× 309 1.2× 141 0.7× 73 0.5× 335 2.4× 42 657
Hitoshi Yasunaga Japan 15 300 0.5× 522 2.0× 65 0.3× 113 0.7× 190 1.4× 52 744
I. Komissarov Belarus 17 254 0.4× 252 1.0× 213 1.1× 135 0.8× 403 2.9× 82 817
K. P. Homewood United Kingdom 18 665 1.1× 651 2.5× 104 0.5× 89 0.6× 406 2.9× 66 923

Countries citing papers authored by R. Driad

Since Specialization
Citations

This map shows the geographic impact of R. Driad's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Driad with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Driad more than expected).

Fields of papers citing papers by R. Driad

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Driad. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Driad. The network helps show where R. Driad may publish in the future.

Co-authorship network of co-authors of R. Driad

This figure shows the co-authorship network connecting the top 25 collaborators of R. Driad. A scholar is included among the top collaborators of R. Driad based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Driad. R. Driad is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Driad, R., et al.. (2025). Electrical properties of SiNy/Al1−xScxN/GaN-based metal–insulator–semiconductor structures. Journal of Applied Physics. 137(19).
2.
Dammann, M., Peter Brückner, R. Driad, et al.. (2025). Reliability and failure analysis of AlGaN/GaN HEMT with NiPtAu and PtAu gate. Microelectronics Reliability. 168. 115718–115718. 1 indexed citations
3.
Dammann, Michael, et al.. (2024). Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1–2.
4.
Basler, Michael, et al.. (2024). Towards Vertical GaN-Power ICs: Co-integration of Lateral HEMTs and Vertical Power CAVETs. FreiDok plus (Universitätsbibliothek Freiburg). 382–385. 3 indexed citations
5.
Daumer, V., R. Aidam, R. Driad, et al.. (2023). III-V based high-performance photodetectors in the non-visible regime – from UV to IR. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 5076. 87–87. 1 indexed citations
6.
Reiner, Richard, R. Driad, Patrick Waltereit, et al.. (2022). On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors. Journal of Applied Physics. 131(11). 6 indexed citations
7.
Driad, R., et al.. (2021). Deep-level characterization of GaN-on-GaN current aperture vertical electron transistors. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 277–282. 6 indexed citations
8.
Driad, R., Stefano Leone, Stefan Mueller, et al.. (2020). Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures. physica status solidi (a). 218(3). 9 indexed citations
9.
Passow, T., F. Fuchs, Lutz Kirste, et al.. (2019). AlGaN avalanche Schottky diodes with high Al-content. Japanese Journal of Applied Physics. 58(SC). SCCC11–SCCC11. 11 indexed citations
10.
Grözing, Markus, et al.. (2013). A highly linear transimpedance amplifier in InP technology for application in 100 Gbit/s fiber optical data communication. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 45–48. 1 indexed citations
11.
Lehmann, Steffen, et al.. (2011). Application of HICUM/L0 to InP DHBTs using single-transistor parameter extraction. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 1–4. 4 indexed citations
12.
Driad, R., J. Rosenzweig, R. Lösch, et al.. (2011). InP DHBT-Based IC Technology for 100-Gb/s Ethernet. IEEE Transactions on Electron Devices. 58(8). 2604–2609. 11 indexed citations
13.
Driad, R., et al.. (2011). Investigation of NiCr Thin Film Resistors for InP-Based Monolithic Microwave Integrated Circuits (MMICs). Journal of The Electrochemical Society. 158(5). H561–H561. 5 indexed citations
14.
Derksen, Rainer H., Garth R. Jacobsen, Marek Chaciński, et al.. (2011). Setting the stage for 100GbE serial standard - the HECTO project. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 1–6. 1 indexed citations
15.
Driad, R., Colja Schubert, Johannes Fischer, et al.. (2010). 107–112 Gbit/s fully integrated CDR/1:2 DEMUX using InP-based DHBTs. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 206–209. 5 indexed citations
16.
Hurm, V., R. Driad, Fouad Benkhelifa, et al.. (2009). InP DHBT-based modulator driver module for 100 Gbit/s Ethernet applications. Electronics Letters. 45(24). 1264–1266. 12 indexed citations
17.
Driad, R., Kerstin Schneider-Hornstein, H. Maßler, et al.. (2005). Fundamental low phase noise InP-based DHBT VCO operating up to 89 GHz. Electronics Letters. 41(17). 961–963. 7 indexed citations
18.
Schneider-Hornstein, Kerstin, R. Driad, Manfred Lang, et al.. (2004). Fundamental low phase noise InP-based DHBT VCOs with high output power operating up to 75 GHz. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 11 indexed citations
19.
Driad, R., W. R. McKinnon, Zheng‐Hong Lu, et al.. (2000). Surface passivation of InGaAs for heterojunction bipolar transistor applications. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(2). 697–700. 1 indexed citations
20.
Driad, R., et al.. (1994). GaInP-GaAs Quasi Self-Aligned HBT Technology. European Solid-State Device Research Conference. 439–442. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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