Erh-Kun Lai
Impact in
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- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Chalcogenide Semiconductor Thin Films
- Polymers and Plastics top 5%
- Transition Metal Oxide Nanomaterials
Papers in
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- Advanced Memory and Neural Computing 53
- Semiconductor materials and devices 51
- Advancements in Semiconductor Devices and Circuit Design 22
- Ferroelectric and Negative Capacitance Devices 16
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- Transition Metal Oxide Nanomaterials 19
- Co-authors
- Hang-Ting LueKuang-Yeu HsiehChih‐Yuan LuRich LiuSzu-Yu WangWei-Chih ChienK. Y. HsiehSimone Raoux
- Journals
- Japanese Journal of Applied Physics (4 papers)IEEE Electron Device Letters (4 papers)IEEE Transactions on Device and Materials Reliability (3 papers)Solid-State Electronics (2 papers)Scientific Reports (1 paper)
- Partner nations
- TaiwanUnited StatesItaly
In The Last Decade
Erh-Kun Lai
85 papers receiving 1.5k citations
Peers
Comparison fields: 5 of 44
- Electrical and Electronic Engineering 1.5k
- Polymers and Plastics 292
- Materials Chemistry 727
- Computer Networks and Communications 181
- Electronic, Optical and Magnetic Materials 114
Countries citing papers authored by Erh-Kun Lai
This map shows the geographic impact of Erh-Kun Lai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Erh-Kun Lai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Erh-Kun Lai more than expected).
Fields of papers citing papers by Erh-Kun Lai
This network shows the impact of papers produced by Erh-Kun Lai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Erh-Kun Lai. The network helps show where Erh-Kun Lai may publish in the future.
Co-authors
The 25 scholars most cited alongside Erh-Kun Lai, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2024 | 0 | |
| 2 | 2024 | 0 | |
| 3 | 2022 | 2 | |
| 4 | 2019 | 20 | |
| 5 | 2018 | 18 | |
| 6 | 2017 | 41 | |
| 7 | A novel high performance WO x ReRAM based on thermally-induced SET operation | 2013 | 2 |
| 8 | A scalable volume-confined phase change memory using physical vapor deposition | 2013 | 5 |
| 9 | 2012 | 3 | |
| 10 | 2012 | 4 | |
| 11 | A method to maintain phase-change memory pre-coding data retention after high temperature solder bonding process in embedded systems | 2011 | 8 |
| 12 | 2009 | 39 | |
| 13 | 2009 | 22 | |
| 14 | 2008 | 5 | |
| 15 | 2008 | 14 | |
| 16 | 2007 | 34 | |
| 17 | 2007 | 8 | |
| 18 | 2007 | 49 | |
| 19 | 2006 | 15 | |
| 20 | 1998 | 16 |
About Erh-Kun Lai
Erh-Kun Lai is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics, Materials Chemistry, Computer Networks and Communications and Electronic, Optical and Magnetic Materials, having authored 91 papers that have together received 1.6k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (53 papers), Semiconductor materials and devices (51 papers), Phase-change materials and chalcogenides (31 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers), Transition Metal Oxide Nanomaterials (19 papers), Ferroelectric and Negative Capacitance Devices (16 papers), Advanced Data Storage Technologies (13 papers) and Electronic and Structural Properties of Oxides (11 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.5k citations), Polymers and Plastics (292 citations), Materials Chemistry (727 citations), Computer Networks and Communications (181 citations) and Electronic, Optical and Magnetic Materials (114 citations). Erh-Kun Lai has collaborated with scholars based in Taiwan, United States and Italy. Frequent co-authors include Hang-Ting Lue, Kuang-Yeu Hsieh, Chih‐Yuan Lu, Rich Liu, Szu-Yu Wang, Wei-Chih Chien, K. Y. Hsieh, Simone Raoux, Yen-Hao Shih and H.L. Lung. Their work appears in journals such as Japanese Journal of Applied Physics, IEEE Electron Device Letters, IEEE Transactions on Device and Materials Reliability, Solid-State Electronics and Scientific Reports.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.