Karsten Beckmann

713 total citations
55 papers, 503 citations indexed

About

Karsten Beckmann is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience and Polymers and Plastics. According to data from OpenAlex, Karsten Beckmann has authored 55 papers receiving a total of 503 indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Electrical and Electronic Engineering, 13 papers in Cellular and Molecular Neuroscience and 11 papers in Polymers and Plastics. Recurrent topics in Karsten Beckmann's work include Advanced Memory and Neural Computing (47 papers), Ferroelectric and Negative Capacitance Devices (42 papers) and Semiconductor materials and devices (20 papers). Karsten Beckmann is often cited by papers focused on Advanced Memory and Neural Computing (47 papers), Ferroelectric and Negative Capacitance Devices (42 papers) and Semiconductor materials and devices (20 papers). Karsten Beckmann collaborates with scholars based in United States, Netherlands and Germany. Karsten Beckmann's co-authors include Nathaniel C. Cady, Harika Manem, Garrett S. Rose, Josh Holt, Rajiv Joshi, Gokul Krishnan, Yu Cao, Sumit Kumar Jha, Gouranga Charan and Alvaro Velasquez and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Karsten Beckmann

50 papers receiving 490 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Karsten Beckmann United States 13 480 153 67 58 52 55 503
Alessandro Grossi Italy 16 753 1.6× 135 0.9× 73 1.1× 57 1.0× 70 1.3× 48 793
Tommaso Zanotti Italy 11 367 0.8× 129 0.8× 54 0.8× 54 0.9× 42 0.8× 31 409
Siyan Lin China 7 348 0.7× 120 0.8× 73 1.1× 66 1.1× 57 1.1× 19 432
Runze Han China 14 595 1.2× 211 1.4× 58 0.9× 31 0.5× 66 1.3× 31 621
Dabin Wu China 4 578 1.2× 163 1.1× 60 0.9× 32 0.6× 137 2.6× 7 636
Zhiqiang Wei Japan 16 630 1.3× 149 1.0× 105 1.6× 72 1.2× 28 0.5× 42 680
Juseong Park South Korea 11 317 0.7× 107 0.7× 43 0.6× 23 0.4× 46 0.9× 27 420
Jeeson Kim South Korea 10 438 0.9× 166 1.1× 54 0.8× 133 2.3× 48 0.9× 21 520
Hanchan Song South Korea 12 456 0.9× 214 1.4× 29 0.4× 24 0.4× 84 1.6× 27 480

Countries citing papers authored by Karsten Beckmann

Since Specialization
Citations

This map shows the geographic impact of Karsten Beckmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Karsten Beckmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Karsten Beckmann more than expected).

Fields of papers citing papers by Karsten Beckmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Karsten Beckmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Karsten Beckmann. The network helps show where Karsten Beckmann may publish in the future.

Co-authorship network of co-authors of Karsten Beckmann

This figure shows the co-authorship network connecting the top 25 collaborators of Karsten Beckmann. A scholar is included among the top collaborators of Karsten Beckmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Karsten Beckmann. Karsten Beckmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kumar, Nitin, et al.. (2025). Noise Spectroscopy and Electrical Transport In NbO2 Memristors with Dual Resistive Switching. Advanced Electronic Materials. 11(9). 2 indexed citations
2.
Shin, Dong Jae, Anton V. Ievlev, Karsten Beckmann, et al.. (2024). Oxygen tracer diffusion in amorphous hafnia films for resistive memory. Materials Horizons. 11(10). 2372–2381. 7 indexed citations
3.
Robinson, Zachary R., Karsten Beckmann, J.H. Michels, et al.. (2024). Measurement of the crystallization and phase transition of niobium dioxide thin-films using a tube furnace optical transmission system. AIP Advances. 14(11). 1 indexed citations
4.
Robinson, Zachary R., et al.. (2024). Enhancement in neuromorphic NbO2 threshold switching at cryogenic temperatures. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 42(6).
7.
Beckmann, Karsten, Natalya Tokranova, Sandra Schujman, et al.. (2024). Investigation of the effect of oxygen partial pressure during reactive sputtering of tantalum oxide resistive random access memory switching layer. Materials Science in Semiconductor Processing. 186. 109060–109060.
8.
Gong, Haibo, Vadim Tokranov, Kevin Brew, et al.. (2023). Three Programming States in Bilayer Ga–Sb Phase Change Memory With AlO x Diffusion Barrier. IEEE Transactions on Electron Devices. 70(7). 3511–3516. 2 indexed citations
9.
Gong, Nanbo, et al.. (2023). Material to system-level benchmarking of CMOS-integrated RRAM with ultra-fast switching for low power on-chip learning. Scientific Reports. 13(1). 14963–14963. 19 indexed citations
10.
Beckmann, Karsten, I. Alexandrou, Kandabara Tapily, et al.. (2023). Implementation of high-performance and high-yield nanoscale hafnium zirconium oxide based ferroelectric tunnel junction devices on 300 mm wafer platform. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 41(1). 6 indexed citations
11.
Robinson, Zachary R., et al.. (2022). Threshold switching stabilization of NbO2 films via nanoscale devices. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 40(6). 4 indexed citations
12.
Gong, Haibo, Vadim Tokranov, Michail M. Yakimov, et al.. (2022). Electrical and structural properties of binary Ga–Sb phase change memory alloys. Journal of Applied Physics. 132(3). 3 indexed citations
13.
Beckmann, Karsten, et al.. (2021). Investigation of ReRAM Variability on Flow-Based Edge Detection Computing Using HfO2-Based ReRAM Arrays. IEEE Transactions on Circuits and Systems I Regular Papers. 68(7). 2900–2910. 7 indexed citations
14.
Beckmann, Karsten, et al.. (2021). In-memory Computation of Error-Correcting Codes Using a Reconfigurable HfOx ReRAM 1T1R Array. 593–598. 1 indexed citations
15.
Charan, Gouranga, Karsten Beckmann, Gokul Krishnan, et al.. (2020). Accurate Inference with Inaccurate RRAM Devices: Statistical Data, Model Transfer, and On-line Adaptation. 1–6. 30 indexed citations
16.
Beckmann, Karsten, et al.. (2019). Interface modification of HfO 2 -based ReRAM via low temperature anneal. Semiconductor Science and Technology. 34(10). 105021–105021. 4 indexed citations
17.
Beckmann, Karsten, H. Bakhru, Edward S. Bielejec, et al.. (2019). Comparison of Radiation Effects in Custom and Commercially Fabricated Resistive Memory Devices. IEEE Transactions on Nuclear Science. 66(12). 2398–2407. 3 indexed citations
18.
Beckmann, Karsten, et al.. (2017). Design Considerations for Memristive Crossbar Physical Unclonable Functions. ACM Journal on Emerging Technologies in Computing Systems. 14(1). 1–23. 16 indexed citations
19.
Beckmann, Karsten, et al.. (2017). Effect of Displacement Damage on Tantalum Oxide Resistive Memory. MRS Advances. 2(52). 3011–3017. 3 indexed citations
20.
Rose, Garrett S., et al.. (2016). Techniques for Improved Reliability in Memristive Crossbar PUF Circuits. 212–217. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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