H. Coffin

605 total citations
18 papers, 504 citations indexed

About

H. Coffin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, H. Coffin has authored 18 papers receiving a total of 504 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 15 papers in Materials Chemistry and 11 papers in Computational Mechanics. Recurrent topics in H. Coffin's work include Semiconductor materials and devices (15 papers), Silicon Nanostructures and Photoluminescence (15 papers) and Ion-surface interactions and analysis (11 papers). H. Coffin is often cited by papers focused on Semiconductor materials and devices (15 papers), Silicon Nanostructures and Photoluminescence (15 papers) and Ion-surface interactions and analysis (11 papers). H. Coffin collaborates with scholars based in France, Greece and Iran. H. Coffin's co-authors include A. Claverie, N. Cherkashin, Caroline Bonafos, Gérard Assayag, Vincent Paillard, M. Carrada, K.‐H. Heinig, P. Normand, Panagiotis Dimitrakis and Bernd Schmidt and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Nanotechnology.

In The Last Decade

H. Coffin

18 papers receiving 488 citations

Peers

H. Coffin

EEE

AMPO

M. D. Efremov Russia

R. Madelon France

Atsushi Kenjo Japan

J. Margail France

G. A. Kachurin Russia

P. S. Plekhanov United States

I. E. Tyschenko Russia

Hirotaka Hamamura Japan

P. Scheiblin France

E. Ose Germany

M. D. Efremov Russia

H. Coffin

320 ×0.8

EEE

325 ×0.8

146 ×0.8

65 ×0.7

184 ×2.2

AMPO

Citations per year, relative to H. Coffin H. Coffin (= 1×) peers M. D. Efremov

Countries citing papers authored by H. Coffin

Since Specialization

Citations

This map shows the geographic impact of H. Coffin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Coffin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Coffin more than expected).

Fields of papers citing papers by H. Coffin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Coffin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Coffin. The network helps show where H. Coffin may publish in the future.

Co-authorship network of co-authors of H. Coffin

This figure shows the co-authorship network connecting the top 25 collaborators of H. Coffin. A scholar is included among the top collaborators of H. Coffin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Coffin. H. Coffin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

Coffin, H., N. Cherkashin, M. Carrada, et al.. (2007). Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS. Ultramicroscopy. 108(4). 346–357. 63 indexed citations

Coffin, H., N. Cherkashin, A. Claverie, et al.. (2006). Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers. Journal of Applied Physics. 99(4). 42 indexed citations

Shalchian, Majid, J. Grisolia, Gérard Assayag, et al.. (2005). From continuous to quantized charging response of silicon nanocrystals obtained by ultra-low energy ion implantation. Solid-State Electronics. 49(7). 1198–1205. 22 indexed citations

Assayag, Gérard, Majid Shalchian, H. Coffin, et al.. (2005). Electrical properties of nanocontacts on silicon nanoparticles embedded in thin SiO2 synthesized by ultralow energy ion implantation. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(6). 2821–2824. 2 indexed citations

Grisolia, J., Majid Shalchian, G. Benassayag, et al.. (2005). Oxidation effects on transport characteristics of nanoscale MOS capacitors with an embedded layer of silicon nanocrystals obtained by low energy ion implantation. Materials Science and Engineering B. 124-125. 494–498. 1 indexed citations

Cherkashin, N., Caroline Bonafos, H. Coffin, et al.. (2005). Fabrication of nanocrystal memories by ultra low energy ion implantation. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(6). 1907–1911. 5 indexed citations

Shalchian, Majid, J. Grisolia, Gérard Assayag, et al.. (2005). Room-temperature quantum effect in silicon nanoparticles obtained by low-energy ion implantation and embedded in a nanometer scale capacitor. Applied Physics Letters. 86(16). 28 indexed citations

Coffin, H., N. Cherkashin, Panagiotis Dimitrakis, et al.. (2005). Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications. Solid-State Electronics. 49(11). 1734–1744. 24 indexed citations

Grisolia, J., Majid Shalchian, G. Benassayag, et al.. (2005). Evolution of Quantum Electronic Features with the Size of Silicon Nanoparticles Embedded in a SiO<sub>2</sub> Layer Obtained by Low Energy Ion Implantation. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 108-109. 71–76. 1 indexed citations

10.

Coffin, H., M. Carrada, N. Cherkashin, et al.. (2005). Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications. Materials Science and Engineering B. 124-125. 499–503. 2 indexed citations

11.

Grisolia, J., Majid Shalchian, Gérard Assayag, et al.. (2005). The effects of oxidation conditions on structural and electrical properties of silicon nanoparticles obtained by ultra-low-energy ion implantation. Nanotechnology. 16(12). 2987–2992. 7 indexed citations

12.

Carrada, M., et al.. (2005). Photoluminescence of Si nanocrystal memory devices obtained by ion beam synthesis. Applied Physics Letters. 87(25). 22 indexed citations

13.

Paillard, Vincent, et al.. (2004). Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate. Journal of Applied Physics. 96(4). 2403–2405. 16 indexed citations

14.

Coffin, H., Caroline Bonafos, N. Cherkashin, et al.. (2004). Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO₂ layers. MRS Proceedings. 830. 2 indexed citations

15.

Bonafos, Caroline, M. Carrada, N. Cherkashin, et al.. (2004). Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO2 layers by low energy ion implantation. Journal of Applied Physics. 95(10). 5696–5702. 92 indexed citations

16.

Cherkashin, N., M. Carrada, H. Coffin, et al.. (2004). Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications. MRS Proceedings. 830. 1 indexed citations

17.

Paillard, Vincent, Caroline Bonafos, H. Coffin, et al.. (2003). Stress measurements of germanium nanocrystals embedded in silicon oxide. Journal of Applied Physics. 94(9). 5639–5642. 91 indexed citations

18.

Normand, P., E. Kapetanakis, Panagiotis Dimitrakis, et al.. (2003). Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis. Applied Physics Letters. 83(1). 168–170. 83 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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