A. Ronda

2.9k total citations
134 papers, 2.4k citations indexed

About

A. Ronda is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. Ronda has authored 134 papers receiving a total of 2.4k indexed citations (citations by other indexed papers that have themselves been cited), including 96 papers in Electrical and Electronic Engineering, 77 papers in Materials Chemistry and 67 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. Ronda's work include Silicon Nanostructures and Photoluminescence (57 papers), Nanowire Synthesis and Applications (55 papers) and Semiconductor materials and devices (47 papers). A. Ronda is often cited by papers focused on Silicon Nanostructures and Photoluminescence (57 papers), Nanowire Synthesis and Applications (55 papers) and Semiconductor materials and devices (47 papers). A. Ronda collaborates with scholars based in France, Italy and Tunisia. A. Ronda's co-authors include Isabelle Berbézier, Luc Favre, A. Portavoce, Marco Abbarchi, Jean‐Noël Aqua, Thomas David, Meher Naffouti, Thomas Frisch, Abdelmalek Benkouider and Mansour Aouassa and has published in prestigious journals such as Physical Review Letters, Nature Communications and SHILAP Revista de lepidopterología.

In The Last Decade

A. Ronda

132 papers receiving 2.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Ronda France 26 1.4k 1.2k 1.1k 880 428 134 2.4k
Isabelle Berbézier France 32 2.0k 1.5× 1.8k 1.5× 1.7k 1.6× 1.2k 1.4× 459 1.1× 214 3.5k
Jeff Drucker United States 24 1.2k 0.9× 1.3k 1.0× 784 0.7× 817 0.9× 99 0.2× 91 2.1k
M. Cerullo United States 12 1.6k 1.2× 1.6k 1.3× 825 0.8× 408 0.5× 200 0.5× 26 2.4k
D. Bensahel France 27 1.9k 1.4× 1.1k 0.9× 1.1k 1.0× 508 0.6× 156 0.4× 142 2.3k
Hiroshi Kakibayashi Japan 19 1.1k 0.8× 1.1k 0.8× 760 0.7× 899 1.0× 78 0.2× 61 1.9k
D. Bouchier France 25 1.3k 1.0× 1.1k 0.9× 1.1k 1.0× 468 0.5× 192 0.4× 138 2.1k
M. Stoffel France 26 1.4k 1.0× 1.6k 1.3× 998 0.9× 661 0.8× 74 0.2× 104 2.4k
R. Niall Tait Canada 20 873 0.6× 440 0.4× 308 0.3× 1.0k 1.2× 166 0.4× 80 1.8k
N. Cherkashin France 27 1.7k 1.2× 851 0.7× 938 0.9× 442 0.5× 337 0.8× 146 2.2k
Tanemasa Asano Japan 24 1.7k 1.2× 637 0.5× 750 0.7× 510 0.6× 122 0.3× 225 2.3k

Countries citing papers authored by A. Ronda

Since Specialization
Citations

This map shows the geographic impact of A. Ronda's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Ronda with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Ronda more than expected).

Fields of papers citing papers by A. Ronda

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Ronda. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Ronda. The network helps show where A. Ronda may publish in the future.

Co-authorship network of co-authors of A. Ronda

This figure shows the co-authorship network connecting the top 25 collaborators of A. Ronda. A scholar is included among the top collaborators of A. Ronda based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Ronda. A. Ronda is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mastropasqua, Chiara, Mathieu Abel, Filippo Fabbri, et al.. (2025). Molecular Beam Epitaxy of Graphene on Ge(100) for Applications in Microelectronics and Optoelectronics. ACS Applied Nano Materials. 8(42). 20177–20187.
2.
Bouabdellaoui, Mohammed, Monica Bollani, Marco Salvalaglio, et al.. (2023). Engineering epitaxy and condensation: Fabrication of Ge nanolayers, mechanism and applications. Applied Surface Science. 630. 157226–157226. 6 indexed citations
3.
Favre, Luc, et al.. (2022). (Invited) SiGe/SOI System: Mechanisms of Condensation and Strain Relaxation. ECS Meeting Abstracts. MA2022-01(20). 1088–1088. 1 indexed citations
4.
Benali, A., Jean-Benoît Claude, Mohammed Bouabdellaoui, et al.. (2020). Flexible photonic devices based on dielectric antennas. Journal of Physics Photonics. 2(1). 15002–15002. 11 indexed citations
5.
Poborchii, Vladimir, Mohammed Bouabdellaoui, Noriyuki Uchida, et al.. (2020). Raman microscopy and infrared optical properties of SiGe Mie resonators formed on SiO 2 via Ge condensation and solid state dewetting. Nanotechnology. 31(19). 195602–195602. 12 indexed citations
6.
David, Thomas, Isabelle Berbézier, Jean‐Noël Aqua, et al.. (2020). New Strategies for Engineering Tensile Strained Si Layers for Novel n-Type MOSFET. ACS Applied Materials & Interfaces. 13(1). 1807–1817. 6 indexed citations
7.
Bottein, Thomas, Mohammed Bouabdellaoui, Jean-Benoît Claude, et al.. (2019). Large Scale Self-Organization of 2D Hexagonal Ge and Au Nanodots on Patterned TiO2 for Optoelectronic Applications. ACS Applied Nano Materials. 2(4). 2026–2035. 7 indexed citations
8.
David, Thomas, Jean‐Noël Aqua, Kailang Liu, et al.. (2018). New strategies for producing defect free SiGe strained nanolayers. Scientific Reports. 8(1). 2891–2891. 23 indexed citations
9.
Naffouti, Meher, Rainer Backofen, Marco Salvalaglio, et al.. (2017). Complex dewetting scenarios of ultrathin silicon films for large-scale nanoarchitectures. Science Advances. 3(11). eaao1472–eaao1472. 73 indexed citations
10.
David, Thomas, Kailang Liu, A. Ronda, et al.. (2017). Tailoring Strain and Morphology of Core–Shell SiGe Nanowires by Low-Temperature Ge Condensation. Nano Letters. 17(12). 7299–7305. 12 indexed citations
11.
Benkouider, Abdelmalek, A. Ronda, Cyril Herrier, et al.. (2014). Selective growth and ordering of SiGe nanowires for band gap engineering. Nanotechnology. 25(33). 335303–335303. 5 indexed citations
12.
Portavoce, A., K. Hoummada, A. Ronda, D. Mangelinck, & Isabelle Berbézier. (2014). Si/Ge intermixing during Ge Stranski–Krastanov growth. Beilstein Journal of Nanotechnology. 5. 2374–2382. 8 indexed citations
13.
Lockwood, D. J., N. L. Rowell, Abdelmalek Benkouider, et al.. (2014). Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111). Beilstein Journal of Nanotechnology. 5. 2498–2504. 4 indexed citations
14.
Reparaz, J. S., Niculina Peica, Ronny Kirste, et al.. (2013). Probing local strain and composition in Ge nanowires by means of tip-enhanced Raman scattering. Nanotechnology. 24(18). 185704–185704. 20 indexed citations
15.
Rowell, N. L., D. J. Lockwood, G. Amiard, et al.. (2011). Photoluminescence Efficiency and Size Distribution of Self Assembled Ge Dots on Porous TiO<SUB>2</SUB>. Journal of Nanoscience and Nanotechnology. 11(10). 9190–9195. 5 indexed citations
16.
Donnadieu, P., et al.. (2011). On Morphology and Strain Field of Ge/Si(001) Islands According to TEM Phase Imaging Method. Journal of Nanoscience and Nanotechnology. 11(10). 9208–9214. 3 indexed citations
17.
Castrucci, P., Silvano Del Gobbo, E. Speiser, et al.. (2011). Photocurrent Generation in Ge Nanocrystal/Si Systems. Journal of Nanoscience and Nanotechnology. 11(10). 9227–9231. 1 indexed citations
18.
Castrucci, P., Silvano Del Gobbo, E. Speiser, et al.. (2010). Photoresponse induced by Ge nanodots on SiO2/Si substrate. Journal of Non-Crystalline Solids. 356(37-40). 1940–1942. 3 indexed citations
19.
Crescenzi, M. De, Manuela Scarselli, A. Sgarlata, et al.. (2008). Photocurrent generation from Ge nanodots in the near UV and visible region. Superlattices and Microstructures. 44(4-5). 331–336. 2 indexed citations
20.
Glachant, A., et al.. (1988). Nitridation of Sio2thin films in low ammonia pressures: An AES, SIMS, XPS and Raman spectroscopy investigation. Surface Science. 205(1-2). 287–310. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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