Tangali S. Sudarshan

1.5k total citations
99 papers, 1.2k citations indexed

About

Tangali S. Sudarshan is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Tangali S. Sudarshan has authored 99 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 93 papers in Electrical and Electronic Engineering, 24 papers in Materials Chemistry and 19 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Tangali S. Sudarshan's work include Silicon Carbide Semiconductor Technologies (75 papers), Silicon and Solar Cell Technologies (31 papers) and Semiconductor materials and devices (31 papers). Tangali S. Sudarshan is often cited by papers focused on Silicon Carbide Semiconductor Technologies (75 papers), Silicon and Solar Cell Technologies (31 papers) and Semiconductor materials and devices (31 papers). Tangali S. Sudarshan collaborates with scholars based in United States, Israel and China. Tangali S. Sudarshan's co-authors include Haizheng Song, Goutam Koley, Amol Singh, M. V. S. Chandrashekhar, J.D. Cross, Peter G. Muzykov, P. B. Klein, Robert T. Bondokov, Ramesh M. Krishna and Krishna C. Mandal and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Small.

In The Last Decade

Tangali S. Sudarshan

97 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tangali S. Sudarshan United States 20 1.0k 407 318 172 151 99 1.2k
Tan Fu Lei Taiwan 18 1.3k 1.3× 458 1.1× 318 1.0× 168 1.0× 160 1.1× 178 1.4k
A. А. Lebedev Russia 19 1.5k 1.5× 598 1.5× 534 1.7× 222 1.3× 191 1.3× 238 1.9k
M. Ghezzo United States 20 1.3k 1.3× 212 0.5× 349 1.1× 89 0.5× 147 1.0× 73 1.4k
Morteza Fathipour Iran 22 901 0.9× 703 1.7× 235 0.7× 377 2.2× 85 0.6× 127 1.4k
M. Guziewicz Poland 17 746 0.7× 606 1.5× 274 0.9× 97 0.6× 215 1.4× 90 1.1k
J. Ratajczak Poland 15 685 0.7× 331 0.8× 389 1.2× 132 0.8× 56 0.4× 126 927
Wayne Y. Fung United States 10 691 0.7× 375 0.9× 526 1.7× 486 2.8× 45 0.3× 16 1.1k
Hayato Sone Japan 18 686 0.7× 522 1.3× 190 0.6× 276 1.6× 145 1.0× 66 890
Takayuki Aoyama Japan 17 907 0.9× 328 0.8× 234 0.7× 106 0.6× 49 0.3× 145 1.1k
Joseph J. Kopanski United States 18 836 0.8× 217 0.5× 578 1.8× 355 2.1× 39 0.3× 70 1.1k

Countries citing papers authored by Tangali S. Sudarshan

Since Specialization
Citations

This map shows the geographic impact of Tangali S. Sudarshan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tangali S. Sudarshan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tangali S. Sudarshan more than expected).

Fields of papers citing papers by Tangali S. Sudarshan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tangali S. Sudarshan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tangali S. Sudarshan. The network helps show where Tangali S. Sudarshan may publish in the future.

Co-authorship network of co-authors of Tangali S. Sudarshan

This figure shows the co-authorship network connecting the top 25 collaborators of Tangali S. Sudarshan. A scholar is included among the top collaborators of Tangali S. Sudarshan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tangali S. Sudarshan. Tangali S. Sudarshan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Song, Haizheng, et al.. (2015). Glide of threading edge dislocations after basal plane dislocation conversion during 4H–SiC epitaxial growth. Journal of Crystal Growth. 418. 7–14. 15 indexed citations
2.
Song, Haizheng, M. V. S. Chandrashekhar, & Tangali S. Sudarshan. (2014). Study of Surface Morphology, Impurity Incorporation and Defect Generation during Homoepitaxial Growth of 4H-SiC Using Dichlorosilane. ECS Journal of Solid State Science and Technology. 4(3). P71–P76. 8 indexed citations
3.
Wang, Jie, et al.. (2014). An Approach to Trace Defects Propagation during SiC Epitaxy. Materials science forum. 778-780. 147–150.
4.
Singh, Amol, et al.. (2014). Functionalized graphene/silicon chemi-diode H2 sensor with tunable sensitivity. Nanotechnology. 25(12). 125501–125501. 49 indexed citations
5.
Sudarshan, Tangali S., et al.. (2013). Trade-Off between Parasitic Deposition and SiC Homoepitaxial Growth Rate Using Halogenated Si-Precursors. ECS Journal of Solid State Science and Technology. 2(8). N3079–N3086. 4 indexed citations
6.
Singh, Amol, et al.. (2013). Pt-functionalized graphene/Si heterostructure for hydrogen sensing. 324. 1–4. 1 indexed citations
7.
Daniels, Kevin M., et al.. (2012). Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene Using IR Reflection Spectroscopy. Materials science forum. 717-720. 665–668. 6 indexed citations
8.
Mandal, Krishna C., Ramesh M. Krishna, Timothy C. Hayes, et al.. (2011). Layered GaTe Crystals for Radiation Detectors. IEEE Transactions on Nuclear Science. 58(4). 1981–1986. 24 indexed citations
9.
Mandal, Krishna C., Timothy C. Hayes, Peter G. Muzykov, et al.. (2010). Characterization of gallium telluride crystals grown from graphite crucible. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7805. 78050Q–78050Q. 4 indexed citations
10.
Muzykov, Peter G., et al.. (2009). Embedded sphere method for measuring dielectric breakdown in polymers and polymer composites. 335–338. 1 indexed citations
11.
Klein, P. B., et al.. (2009). Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors. Materials science forum. 615-617. 291–294. 8 indexed citations
12.
Ramm, M.S., et al.. (2008). Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace. Materials science forum. 600-603. 27–30. 5 indexed citations
13.
Wahab, Q., et al.. (2006). A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC. Materials science forum. 527-529. 911–914. 1 indexed citations
14.
Gao, Ying, et al.. (2005). CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates. Materials science forum. 483-485. 113–116. 1 indexed citations
15.
Maximenko, Sergey I., et al.. (2005). Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B. Materials science forum. 483-485. 989–992. 1 indexed citations
16.
Sudarshan, Tangali S., et al.. (2004). Nondestructive defect characterization of SiC substrates and epilayers. Journal of Electronic Materials. 33(5). 450–455. 12 indexed citations
17.
Bondokov, Robert T., et al.. (2004). Modification of 6H-SiC Surface Defect Structure during Hydrogen Etching. Materials science forum. 457-460. 431–436. 3 indexed citations
18.
Dudley, Michael, et al.. (2004). Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research. Materials science forum. 457-460. 601–604. 2 indexed citations
19.
Long, Frederick H., et al.. (2000). Characterization of Silicon Carbide using Raman Spectroscopy. Materials science forum. 338-342. 615–618. 5 indexed citations
20.
Khan, Mansoor A., et al.. (1998). Thick Film SiC Epitaxy for 'Filling Up' Micropipes. Materials science forum. 264-268. 167–170. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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