M. Voelskow

1.6k citations

124 papers · 1.2k indexed · h-index 18

Impact in

Ceramics and Composites top 10%
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis

Papers in

Ceramics and Composites 12
Electrical and Electronic Engineering 107
- Semiconductor materials and devices 49
- Silicon and Solar Cell Technologies 47
- Silicon Carbide Semiconductor Technologies 35
- Thin-Film Transistor Technologies 34
- Integrated Circuits and Semiconductor Failure Analysis 20

Co-authors: W. Skorupa V. Heera M. Helm Richard McMahon M. Smith L. Rebohle A. Kanjilal A. Mücklich
Journals: Journal of Applied Physics (17 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (16 papers)Applied Physics Letters (8 papers)Physical Review B (6 papers)Applied Surface Science (4 papers)
Partner nations: Germany Russia United Kingdom

In The Last Decade

M. Voelskow

121 papers receiving 1.2k citations

Peers

Countries citing papers authored by M. Voelskow

Since Specialization

Citations

This map shows the geographic impact of M. Voelskow's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Voelskow with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Voelskow more than expected).

Fields of papers citing papers by M. Voelskow

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Voelskow. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Voelskow. The network helps show where M. Voelskow may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Voelskow, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Voelskow Line = papers co-authored together M. Voelskow links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Effect of SiO2 surface conditions on the diffusion and interaction of co-implanted In and As atoms Journal of Non-Crystalline Solids ·I. E. Tyschenko, M. Voelskow, А. Г. Черков	2020	2
2	Ex situ n⁺ doping of GeSn alloys via non-equilibrium processing Semiconductor Science and Technology ·Sławomir Prucnal, Yonder Berencén, M Wang, L. Rebohle, Roman Böttger, Inga Anita Fischer, Lion Augel, Michael Oehme, Jörg Schulze, M. Voelskow, M. Helm, W. Skorupa, Shengqiang Zhou	2018	17
3	In situ ohmic contact formation for n-type Ge via non-equilibrium processing Semiconductor Science and Technology ·Sławomir Prucnal, Jacopo Frigerio, E. Napolitani, Andrea Ballabio, Yonder Berencén, L. Rebohle, M Wang, Roman Böttger, M. Voelskow, Giovanni Isella, René Hübner, M. Helm, Shengqiang Zhou, W. Skorupa	2017	10
4	Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures Materials ·M. Radek, Bartosz Liedke, Bernd Schmidt, M. Voelskow, L. Bischoff, J. Lundsgaard Hansen, A. Nylandsted Larsen, Dominique Bougeard, Roman Böttger, Sławomir Prucnal, M. Posselt, H. Bracht	2017	6
5	Ultra-doped n-type germanium thin films for sensing in the mid-infrared Scientific Reports ·Sławomir Prucnal, Fang Liu, M. Voelskow, Lasse Vines, L. Rebohle, Denny Lang, Yonder Berencén, Stefan Andrić, R. Boettger, M. Helm, Shengqiang Zhou, W. Skorupa	2016	61
6	Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing Journal of Applied Physics ·René Wutzler, L. Rebohle, Sławomir Prucnal, F.L. Bregolin, René Hübner, M. Voelskow, M. Helm, W. Skorupa	2015	7
7	Formation of dendritic crystal structures in thin silicon films on silicon dioxide by carbon ion implantation and high intensity large area flash lamp irradiation Journal of Crystal Growth ·M. Voelskow, R. Endler, Thomas Schumann, A. Mücklich, Xin Ou, E.H. Liepack, T. Gebel, A. Peeva, W. Skorupa	2013	2
8	Conductivity type and crystal orientation of GaAs nanocrystals fabricated in silicon by ion implantation and flash lamp annealing Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Sławomir Prucnal, Maciej Oskar Liedke, Shengqiang Zhou, M. Voelskow, A. Mücklich, M. Turek, J. Żuk, W. Skorupa	2013	1
9	Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·I. E. Tyschenko, M. Voelskow, А. Г. Черков, V. P. Popov	2009	4
10	Superconducting State in a Gallium-Doped Germanium Layer at Low Temperatures Physical Review Letters ·T. Herrmannsdörfer, V. Heera, O. Ignatchik, M. Uhlarz, A. Mücklich, M. Posselt, H. Reuther, B. Schmidt, K. H. Heinig, W. Skorupa, M. Voelskow, C. Wündisch, R. Skrotzki, M. Helm, J. Wosnitza	2009	73
11	SiGe Heterostructures-on-Insulator Produced by Ge<sup>+</sup>-Ion Implantation and Subsequent Hydrogen Transfer Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·I. E. Tyschenko, А. Г. Черков, M. Voelskow, V. P. Popov	2007	1
12	Thermal and Stress Modeling for the Flash Lamp Crystallization of Amorphous Silicon Films MRS Proceedings ·Mark Griffin Smith, Richard McMahon, Keith A. Seffen, D. Panknin, M. Voelskow, W. Skorupa	2006	2
13	Photoluminescence from cadmium sulfide nanoclusters formed in the matrix of a Langmuir-Blodgett film Semiconductors ·E. A. Bagaev, К. С. Журавлев, L. L. Sveshnikova, I. A. Badmaeva, S. M. Repinskiǐ, M. Voelskow	2003	18
14	Blue-Green Photoluminescence from Silicon Dioxide Films Containing Ge<sup>+</sup> Nanocrystals Formed under Conditions of High Hydrostatic Pressure Annealing Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·I. E. Tyschenko, L. Rebohle, A. B. Talochkin, Boris A. Kolesov, M. Voelskow, A. Misiuk, W. Skorupa	2001	1
15	Crystallization and surface erosion of SiC by ion irradiation at elevated temperatures Journal of Applied Physics ·V. Heera, J. Stoëmenos, R. Kögler, M. Voelskow, W. Skorupa	1999	25
16	Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering Applied Surface Science ·W. Anwand, G. Bräuer, P. G. Coleman, M. Voelskow, W. Skorupa	1999	3
17	A Computational Model for the Formation of (SiC)<sub>1-x</sub>(AIN)<sub>x</sub> Structures by Hot, High-Dose N<sup>+</sup> and Al<sup>+</sup> Co-Implants in 6H-SiC Materials science forum ·Yu. V. Truschin, R.A. Yankov, V. S. Kharlamov, D. V. Kulikov, D.N. Tsigankov, U. Kreißig, M. Voelskow, Joerg Pezoldt, W. Skorupa	1998	4
18	Formation of Buried Layers of (SiC)_1-x(AINT)_x in 6H-SiC Using Ion-Beam Synthesis MRS Proceedings ·R.A. Yankov, N. Hatzopoulos, W. Fukarek, M. Voelskow, V. Heera, J. Pezoldt, W. Skorupa	1996	12
19	Temperature Dependence of Electron Beam Induced Epitaxial Crystallization of Silicon physica status solidi (a) ·D. Hoehl, V. Heera, H. Bartsch, K. Wollschläger, W. Skorupa, M. Voelskow	1990	6
20	Annealing Characteristics of SiO2-Si Structures after Incoherent Light Pulse Processing physica status solidi (a) ·N. Sieber, R. Klabes, M. Voelskow, F. Fenske, K.‐H. Stegemann	1982	2

About M. Voelskow

M. Voelskow is a scholar working on Ceramics and Composites, Electrical and Electronic Engineering, Computational Mechanics, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 124 papers that have together received 1.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (49 papers), Silicon and Solar Cell Technologies (47 papers), Silicon Nanostructures and Photoluminescence (43 papers), Silicon Carbide Semiconductor Technologies (35 papers), Thin-Film Transistor Technologies (34 papers), Ion-surface interactions and analysis (29 papers), Semiconductor materials and interfaces (24 papers) and Integrated Circuits and Semiconductor Failure Analysis (20 papers). The work is most often cited by research in Ceramics and Composites (101 citations), Electrical and Electronic Engineering (918 citations), Materials Chemistry (621 citations), Computational Mechanics (200 citations) and Atomic and Molecular Physics, and Optics (286 citations). M. Voelskow has collaborated with scholars based in Germany, Russia and United Kingdom. Frequent co-authors include W. Skorupa, V. Heera, M. Helm, Richard McMahon, M. Smith, L. Rebohle, W. Skorupa, A. Kanjilal, A. Mücklich and D. Panknin. Their work appears in journals such as Journal of Applied Physics, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Applied Physics Letters, Physical Review B and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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