Joerg Pezoldt

515 total citations
80 papers, 443 citations indexed

About

Joerg Pezoldt is a scholar working on Electrical and Electronic Engineering, Mechanical Engineering and Condensed Matter Physics. According to data from OpenAlex, Joerg Pezoldt has authored 80 papers receiving a total of 443 indexed citations (citations by other indexed papers that have themselves been cited), including 63 papers in Electrical and Electronic Engineering, 17 papers in Mechanical Engineering and 14 papers in Condensed Matter Physics. Recurrent topics in Joerg Pezoldt's work include Silicon Carbide Semiconductor Technologies (52 papers), Semiconductor materials and devices (31 papers) and GaN-based semiconductor devices and materials (14 papers). Joerg Pezoldt is often cited by papers focused on Silicon Carbide Semiconductor Technologies (52 papers), Semiconductor materials and devices (31 papers) and GaN-based semiconductor devices and materials (14 papers). Joerg Pezoldt collaborates with scholars based in Germany, France and Russia. Joerg Pezoldt's co-authors include Thomas Stauden, V. Cimalla, Heiko O. Jacobs, Shantonu Biswas, Christian Förster, O. Ambacher, Yufei Hao, G. Ecke, Katja Tonisch and P. Masri and has published in prestigious journals such as Advanced Materials, Nature Communications and Applied Physics Letters.

In The Last Decade

Joerg Pezoldt

78 papers receiving 434 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Joerg Pezoldt Germany 11 322 150 78 75 56 80 443
Ting Liu China 12 192 0.6× 176 1.2× 241 3.1× 51 0.7× 46 0.8× 59 488
Jens Ingolf Mönch Germany 8 172 0.5× 236 1.6× 138 1.8× 112 1.5× 25 0.4× 14 426
Thomas Stauden Germany 14 374 1.2× 337 2.2× 140 1.8× 83 1.1× 107 1.9× 65 686
Tai‐Hong Chen Taiwan 14 397 1.2× 107 0.7× 184 2.4× 40 0.5× 37 0.7× 59 591
Szu-Hung Chen Taiwan 11 164 0.5× 172 1.1× 91 1.2× 39 0.5× 36 0.6× 36 342
Shahab Shervin United States 14 260 0.8× 259 1.7× 215 2.8× 61 0.8× 162 2.9× 32 514
Y.C. Chen Taiwan 13 304 0.9× 161 1.1× 221 2.8× 50 0.7× 76 1.4× 38 527
Sandra Gilles Germany 13 322 1.0× 135 0.9× 111 1.4× 20 0.3× 44 0.8× 17 477
Eva Mutunga United States 6 159 0.5× 214 1.4× 96 1.2× 41 0.5× 15 0.3× 13 399
Humberto Campanella Spain 13 213 0.7× 407 2.7× 101 1.3× 208 2.8× 60 1.1× 46 548

Countries citing papers authored by Joerg Pezoldt

Since Specialization
Citations

This map shows the geographic impact of Joerg Pezoldt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Joerg Pezoldt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Joerg Pezoldt more than expected).

Fields of papers citing papers by Joerg Pezoldt

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Joerg Pezoldt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Joerg Pezoldt. The network helps show where Joerg Pezoldt may publish in the future.

Co-authorship network of co-authors of Joerg Pezoldt

This figure shows the co-authorship network connecting the top 25 collaborators of Joerg Pezoldt. A scholar is included among the top collaborators of Joerg Pezoldt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Joerg Pezoldt. Joerg Pezoldt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Thiele, Sebastian, et al.. (2022). Designing MoS2 channel properties for analog memory in neuromorphic applications. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 40(3). 5 indexed citations
2.
Hähnlein, Bernd, et al.. (2020). Structural Analysis of Sputtered Sc(x)Al(1-x)N Layers for Sensor Applications. Key engineering materials. 865. 13–18. 3 indexed citations
3.
Biswas, Shantonu, et al.. (2019). Integrated multilayer stretchable printed circuit boards paving the way for deformable active matrix. Nature Communications. 10(1). 4909–4909. 80 indexed citations
4.
Pezoldt, Joerg, et al.. (2018). Defects and Polytype Instabilities. Materials science forum. 924. 147–150.
5.
Fang, Jun, et al.. (2013). Effective Collection and Detection of Airborne Species Using SERS‐Based Detection and Localized Electrodynamic Precipitation. Advanced Materials. 25(26). 3554–3559. 21 indexed citations
6.
As, D. J., et al.. (2009). Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On and Normally Off Operation. MRS Proceedings. 1202. 1 indexed citations
7.
Peyre, Hervé, Joerg Pezoldt, M. Voelskow, W. Skorupa, & Jean Camassel. (2009). SIMS Investigation of Ge<sub>x</sub>(4H-SiC)<sub>1-x</sub> Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2. Materials science forum. 615-617. 465–468. 1 indexed citations
8.
Tonisch, Katja, et al.. (2009). Comparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) Substrates. Materials science forum. 615-617. 943–946. 5 indexed citations
9.
Kazan, M., et al.. (2008). SiC Polytype Stability Influenced by Ge Impurities. Materials science forum. 600-603. 533–536. 1 indexed citations
10.
Pezoldt, Joerg, et al.. (2008). Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing. Materials science forum. 600-603. 239–242. 1 indexed citations
11.
Förster, Christian, V. Cimalla, Mike Stubenrauch, et al.. (2006). Micromachining of Novel SiC on Si Structures for Device and Sensor Applications. Materials science forum. 527-529. 1111–1114. 5 indexed citations
12.
Schmidt, Alexander, et al.. (2006). Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures. Materials science forum. 527-529. 315–318. 1 indexed citations
13.
Pezoldt, Joerg, Francisco M. Morales, Thomas Stauden, et al.. (2006). Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification. Materials science forum. 527-529. 295–298. 2 indexed citations
14.
Morales, Francisco M., Sergio I. Molina, D. Araújo, et al.. (2004). Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111). Materials science forum. 457-460. 297–300. 3 indexed citations
15.
Förster, Christian, et al.. (2004). Etching of SiC with Fluorine ECR Plasma. Materials science forum. 457-460. 821–824. 12 indexed citations
16.
Morales, Francisco M., Sergio I. Molina, D. Araújo, V. Cimalla, & Joerg Pezoldt. (2003). Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC. Materials science forum. 433-436. 285–288. 3 indexed citations
17.
Pezoldt, Joerg, et al.. (2002). Nucleation of SiC on Si and their relationship to nano-dot formation: II. Theoretical investigation. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4627. 165–165. 6 indexed citations
18.
Pezoldt, Joerg, et al.. (2002). RHEED: A Tool for Structural Investigations of Thin Polytypic SiC Layers. Materials science forum. 389-393. 463–466. 3 indexed citations
20.
Cimalla, V., et al.. (1998). The Measurement of the Thickness of Thin SiC Layers on Silicon. Materials science forum. 264-268. 641–644. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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