R. Kögler

1.6k total citations
100 papers, 1.4k citations indexed

About

R. Kögler is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Materials Chemistry. According to data from OpenAlex, R. Kögler has authored 100 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 86 papers in Electrical and Electronic Engineering, 39 papers in Computational Mechanics and 26 papers in Materials Chemistry. Recurrent topics in R. Kögler's work include Silicon and Solar Cell Technologies (61 papers), Ion-surface interactions and analysis (39 papers) and Integrated Circuits and Semiconductor Failure Analysis (32 papers). R. Kögler is often cited by papers focused on Silicon and Solar Cell Technologies (61 papers), Ion-surface interactions and analysis (39 papers) and Integrated Circuits and Semiconductor Failure Analysis (32 papers). R. Kögler collaborates with scholars based in Germany, Spain and China. R. Kögler's co-authors include W. Skorupa, V. Heera, J. Stoëmenos, W. Skorupa, Asta Richter, P. Werner, Xin Ou, C. Serre, A. Mücklich and A. Peeva and has published in prestigious journals such as Advanced Materials, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

R. Kögler

98 papers receiving 1.3k citations

Peers

R. Kögler

EEE

AMPO

R.A. Yankov Germany

Yuanan Zhao China

M. Suezawa Japan

J. G. M. van Berkum Netherlands

J. Barbolla Spain

D. Fathy United States

D.P. Malta United States

T. Drüsedau Germany

Hans‐Olof Blom Sweden

Meiping Zhu China

R.A. Yankov Germany

R. Kögler

961 ×1.0

EEE

842 ×1.3

377 ×0.8

220 ×1.2

AMPO

103 ×0.6

Citations per year, relative to R. Kögler R. Kögler (= 1×) peers R.A. Yankov

Countries citing papers authored by R. Kögler

Since Specialization

Citations

This map shows the geographic impact of R. Kögler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Kögler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Kögler more than expected).

Fields of papers citing papers by R. Kögler

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Kögler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Kögler. The network helps show where R. Kögler may publish in the future.

Co-authorship network of co-authors of R. Kögler

This figure shows the co-authorship network connecting the top 25 collaborators of R. Kögler. A scholar is included among the top collaborators of R. Kögler based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Kögler. R. Kögler is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Richter, Asta, et al.. (2013). Ion-irradiation effects on dissimilar friction stir welded joints between ODS alloy and ferritic stainless steel. Journal of Alloys and Compounds. 615. S448–S453. 24 indexed citations

Richter, Asta, C.-L. Chen, A. Mücklich, & R. Kögler. (2011). Irradiation Damage in Dual Beam Irradiated Nanostructured FeCrAl Oxide Dispersion Strengthened Steel. MRS Proceedings. 1298. 3 indexed citations

Kögler, R., et al.. (2009). A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping. Nanoscale Research Letters. 5(1). 243–6. 13 indexed citations

Kögler, R., et al.. (2007). Study of defect engineering in the initial stage of SIMOX processing. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 257(1-2). 161–164. 4 indexed citations

Kögler, R., F. Eichhorn, A. Mücklich, et al.. (2005). Effect of excess vacancies in ion beam synthesis of SiC nanoclusters. Vacuum. 78(2-4). 177–180. 3 indexed citations

Kögler, R., A. Mücklich, J.R. Kaschny, et al.. (2005). Defect Engineering in Ion Beam Synthesis of SiC and SiO<sub>2</sub> in Si. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 108-109. 321–326. 3 indexed citations

Fuchs, Michael, et al.. (2005). SIMS investigation of gettering centres produced by phosphorus MeV ion implantation. Applied Surface Science. 252(1). 278–281. 3 indexed citations

Kögler, R., et al.. (2003). Ion Beam Induced Excess Vacancies in Si and SiGe and Related Cu Gettering. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 95-96. 587–592. 1 indexed citations

Kögler, R., A. Peeva, A. Mücklich, et al.. (2000). Trans-projected-range gettering of copper in high-energy ion-implanted silicon. Journal of Applied Physics. 88(11). 6934–6936. 1 indexed citations

10.

Kögler, R., A. Peeva, W. Anwand, et al.. (1999). Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon. Applied Physics Letters. 75(9). 1279–1281. 26 indexed citations

11.

Kögler, R., et al.. (1999). Distribution of gettering centres at a buried amorphous layer in silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 148(1-4). 334–339. 6 indexed citations

12.

Heera, V., J. Stoëmenos, R. Kögler, M. Voelskow, & W. Skorupa. (1999). Crystallization and surface erosion of SiC by ion irradiation at elevated temperatures. Journal of Applied Physics. 85(3). 1378–1386. 25 indexed citations

13.

Kögler, R., et al.. (1997). Metal Gettering by Defective Regions in Carbon-Implanted Silicon. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 57-58. 63–68. 5 indexed citations

14.

Henkel, T., V. Heera, R. Kögler, W. Skorupa, & M. Seibt. (1996). The temperature dependence of the ion beam induced interfacial amorphization in silicon. Applied Physics Letters. 68(24). 3425–3427. 8 indexed citations

15.

Heera, V., J. Stoëmenos, R. Kögler, & W. Skorupa. (1995). Amorphization and recrystallization of 6H-SiC by ion-beam irradiation. Journal of Applied Physics. 77(7). 2999–3009. 141 indexed citations

16.

Heera, V., R. Kögler, W. Skorupa, & J. Stoëmenos. (1994). Amortization and Recrystallization of 6H-SiC by ion Beam Irradiation. MRS Proceedings. 339. 3 indexed citations

17.

Kögler, R., J. von Borany, D. Panknin, & W. Skorupa. (1994). Electrical effects of residual defects in Si after high energy implantation of Ge+ ions and annealing. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 89(1-4). 350–353. 3 indexed citations

18.

Kögler, R., V. Heera, W. Skorupa, et al.. (1993). Reduced reverse temperature of ion beam induced amorphization/ crystallization for intermittent beam irradiation of silicon?. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 80-81. 556–558. 12 indexed citations

19.

Kögler, R., et al.. (1991). Range measurements of phosphorus in silicon after high energy implantation between 8 and 30 MeV. Radiation effects and defects in solids. 118(2). 131–135.

20.

Skorupa, W., R. Kögler, & K. Schmalz. (1990). Carrier lifetime increase in silicon by gettering with a MeV-implanted carbon-rich layer. Electronics Letters. 26(22). 1898–1899. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact