Y. Pacaud

449 total citations
13 papers, 409 citations indexed

About

Y. Pacaud is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials and Computational Mechanics. According to data from OpenAlex, Y. Pacaud has authored 13 papers receiving a total of 409 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 4 papers in Mechanics of Materials and 4 papers in Computational Mechanics. Recurrent topics in Y. Pacaud's work include Silicon Carbide Semiconductor Technologies (8 papers), Thin-Film Transistor Technologies (6 papers) and Semiconductor materials and devices (5 papers). Y. Pacaud is often cited by papers focused on Silicon Carbide Semiconductor Technologies (8 papers), Thin-Film Transistor Technologies (6 papers) and Semiconductor materials and devices (5 papers). Y. Pacaud collaborates with scholars based in Germany, Spain and Greece. Y. Pacaud's co-authors include W. Skorupa, G. Bräuer, A. Pérez‐Rodríguez, F. Plazaola, W. Anwand, John C. Stormer, L. Calvo‐Barrio, C. Serre, J.R. Morante and V. Heera and has published in prestigious journals such as Physical review. B, Condensed matter, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

Y. Pacaud

13 papers receiving 400 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Y. Pacaud Germany 10 325 167 107 79 72 13 409
Sergio A. Ajuria United States 10 485 1.5× 208 1.2× 42 0.4× 28 0.4× 39 0.5× 27 523
D. Slobodin United States 12 516 1.6× 392 2.3× 75 0.7× 19 0.2× 31 0.4× 26 556
A. J. M. Berntsen Netherlands 12 357 1.1× 180 1.1× 21 0.2× 33 0.4× 51 0.7× 22 395
A. D. Stewart United Kingdom 8 246 0.8× 316 1.9× 96 0.9× 14 0.2× 26 0.4× 17 361
M. B. Yu Singapore 13 278 0.9× 462 2.8× 62 0.6× 26 0.3× 15 0.2× 23 515
TT Hart United States 4 145 0.4× 131 0.8× 30 0.3× 22 0.3× 121 1.7× 5 285
Pawan Bhat India 12 239 0.7× 250 1.5× 23 0.2× 60 0.8× 16 0.2× 38 323
Kouichi Ono Kouichi Ono Japan 11 387 1.2× 320 1.9× 85 0.8× 9 0.1× 27 0.4× 17 455
Kunihiro Yagi Japan 10 342 1.1× 169 1.0× 51 0.5× 10 0.1× 131 1.8× 16 416
M. Janai Israel 13 455 1.4× 310 1.9× 15 0.1× 50 0.6× 37 0.5× 31 517

Countries citing papers authored by Y. Pacaud

Since Specialization
Citations

This map shows the geographic impact of Y. Pacaud's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Pacaud with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Pacaud more than expected).

Fields of papers citing papers by Y. Pacaud

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Pacaud. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Pacaud. The network helps show where Y. Pacaud may publish in the future.

Co-authorship network of co-authors of Y. Pacaud

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Pacaud. A scholar is included among the top collaborators of Y. Pacaud based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Pacaud. Y. Pacaud is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

13 of 13 papers shown
1.
Bräuer, G., W. Anwand, P. G. Coleman, et al.. (1998). Post-implantation annealing of SiC studied by slow-positron spectroscopies. Journal of Physics Condensed Matter. 10(5). 1147–1156. 35 indexed citations
2.
Barklie, R.C., Matthew Collins, B. Holm, Y. Pacaud, & W. Skorupa. (1997). An EPR study of defects induced in 6H-SiC by ion implantation. Journal of Electronic Materials. 26(3). 137–143. 13 indexed citations
3.
Pacaud, Y., W. Skorupa, A. Pérez‐Rodríguez, et al.. (1996). Investigation of the damage induced by 200 keV Ge+ ion implantation in 6HSiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 112(1-4). 321–324. 5 indexed citations
4.
Skorupa, W., et al.. (1996). Ion beam processing of single crystalline silicon carbide. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 120(1-4). 114–120. 22 indexed citations
5.
Zorba, T., et al.. (1996). An infrared study of Ge+ implanted SiC. Applied Surface Science. 102. 120–124. 11 indexed citations
6.
Serre, C., L. Calvo‐Barrio, A. Pérez‐Rodríguez, et al.. (1996). Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization. Journal of Applied Physics. 79(9). 6907–6913. 48 indexed citations
7.
Pérez‐Rodríguez, A., Y. Pacaud, L. Calvo‐Barrio, et al.. (1996). Analysis of ion beam induced damage and amorphization of 6H-SiC by raman scattering. Journal of Electronic Materials. 25(3). 541–547. 61 indexed citations
8.
Bräuer, G., W. Anwand, P. G. Coleman, et al.. (1996). Positron studies of defects in ion-implanted SiC. Physical review. B, Condensed matter. 54(5). 3084–3092. 103 indexed citations
9.
Pacaud, Y., J. Stoëmenos, G. Bräuer, et al.. (1996). Radiation damage and annealing behaviour of Ge+-implanted SiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 120(1-4). 177–180. 32 indexed citations
10.
Pacaud, Y., W. Skorupa, & J. Stoëmenos. (1996). Microstructural characterization of amorphized and recrystallized 6H-SiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 120(1-4). 181–185. 28 indexed citations
11.
Pérez‐Rodríguez, A., L. Calvo‐Barrio, A. Romano‐Rodrı́guez, et al.. (1995). Ion-beam-induced amorphization and recrystallization processes in SiC: Raman-scattering analysis. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2648. 481–481. 1 indexed citations
12.
Rivière, J.P., Y. Pacaud, & M. Cahoreau. (1993). Spectroscopic studies of BN films deposited by dynamic ion mixing. Thin Solid Films. 227(1). 44–53. 42 indexed citations
13.
Pacaud, Y., et al.. (1992). Characterization of boron nitride films prepared by dynamic ion mixing. Thin Solid Films. 207(1-2). 131–137. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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