C. Clerc

1.0k total citations
52 papers, 860 citations indexed

About

C. Clerc is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, C. Clerc has authored 52 papers receiving a total of 860 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 28 papers in Materials Chemistry and 17 papers in Computational Mechanics. Recurrent topics in C. Clerc's work include Ion-surface interactions and analysis (16 papers), Thin-Film Transistor Technologies (16 papers) and Silicon and Solar Cell Technologies (10 papers). C. Clerc is often cited by papers focused on Ion-surface interactions and analysis (16 papers), Thin-Film Transistor Technologies (16 papers) and Silicon and Solar Cell Technologies (10 papers). C. Clerc collaborates with scholars based in France, United States and Australia. C. Clerc's co-authors include Pere Roca i Cabarrocas, Anna Fontcuberta i Morral, H. Bernas, J. Chaumont, K. M. Yu, Hiroyuki Fujita, G. J. Foran, Bruno Le Pioufle, C. J. Glover and M. C. Ridgway and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

C. Clerc

51 papers receiving 828 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Clerc France 14 533 532 208 198 91 52 860
J. G. M. van Berkum Netherlands 16 703 1.3× 375 0.7× 332 1.6× 166 0.8× 58 0.6× 45 963
Jaakko Saarilahti Finland 11 551 1.0× 253 0.5× 200 1.0× 131 0.7× 174 1.9× 47 774
R. Ratajczak Poland 17 406 0.8× 479 0.9× 159 0.8× 172 0.9× 49 0.5× 76 820
G. Vitali Italy 18 730 1.4× 533 1.0× 195 0.9× 414 2.1× 135 1.5× 89 1.1k
R. Kögler Germany 22 939 1.8× 629 1.2× 189 0.9× 469 2.4× 133 1.5× 100 1.4k
M. J. Mantini United States 13 833 1.6× 666 1.3× 113 0.5× 128 0.6× 152 1.7× 26 1.1k
P. K. Lim Hong Kong 13 481 0.9× 586 1.1× 151 0.7× 56 0.3× 58 0.6× 30 820
V. Heera Germany 20 1.1k 2.1× 653 1.2× 311 1.5× 392 2.0× 109 1.2× 100 1.6k
J. Fontenille France 14 464 0.9× 442 0.8× 161 0.8× 124 0.6× 28 0.3× 32 697
W.M. Arnoldbik Netherlands 18 793 1.5× 545 1.0× 95 0.5× 270 1.4× 114 1.3× 60 1.0k

Countries citing papers authored by C. Clerc

Since Specialization
Citations

This map shows the geographic impact of C. Clerc's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Clerc with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Clerc more than expected).

Fields of papers citing papers by C. Clerc

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Clerc. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Clerc. The network helps show where C. Clerc may publish in the future.

Co-authorship network of co-authors of C. Clerc

This figure shows the co-authorship network connecting the top 25 collaborators of C. Clerc. A scholar is included among the top collaborators of C. Clerc based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Clerc. C. Clerc is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ban-d’Etat, B., P. Boduch, S. Bouffard, et al.. (2004). Potential and Kinetic Sputtering of UO2 by Slow Highly Charged Ions. Physica Scripta. 110. 389–389. 7 indexed citations
2.
Duclère, Jean‐René, Maryline Guilloux‐Viry, F. Solal, et al.. (2004). Structural comparative study by RBS and XPD of stoichiometric and Bi-deficient SrBi2Nb2O9 thin films epitaxially grown on (100)SrTiO3. Surface Science. 569(1-3). 125–141. 1 indexed citations
3.
Halbwax, Mathieu, Vy Yam, C. Clerc, et al.. (2004). Kinetics of the heteroepitaxial growth of Ge layer at low temperature on Si(001) in UHV-CVD. physica status solidi (a). 201(2). 329–332. 1 indexed citations
4.
Clerc, C., Thomas Lippert, Stefan Müller, et al.. (2003). Analysis of the plasma produced by pulsed reactive crossed-beam laser ablation of La0.6Ca0.4CoO3. Applied Surface Science. 208-209. 45–51. 7 indexed citations
5.
Bouchier, D., et al.. (2003). Study of surface roughening of tensily strained Si1−x−yGexCy films grown by ultra high vacuum-chemical vapor deposition. Thin Solid Films. 428(1-2). 150–155. 5 indexed citations
6.
Bouchier, D., et al.. (2002). Surface roughening of tensilely strained Si1−x−yGexCy films grown by ultrahigh vacuum chemical vapor deposition. Applied Physics Letters. 81(15). 2746–2748. 11 indexed citations
7.
Glover, C. J., M.C. Ridgway, K. M. Yu, et al.. (2001). Structure and low-temperature thermal relaxation of ion-implanted germanium. Journal of Synchrotron Radiation. 8(2). 773–775. 2 indexed citations
8.
Glover, C. J., et al.. (2001). Structural-relaxation-induced bond length and bond angle changes in amorphized Ge. Physical review. B, Condensed matter. 63(7). 25 indexed citations
9.
Ridgway, M. C., C. J. Glover, Krešimir Furić, et al.. (2001). Implantation-induced disorder in amorphous Ge: Production and relaxation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 175-177. 21–25. 4 indexed citations
10.
Zanghi, Didier, Cristian M. Teodorescu, F. Pétroff, et al.. (2001). Reduced magnetic moment per atom in small Ni and Co clusters embedded in AlN. Journal of Applied Physics. 90(12). 6367–6373. 19 indexed citations
11.
Clerc, C., et al.. (1999). Characterization of Sputtered TiNi Shape Memory Alloy Thin Films. Japanese Journal of Applied Physics. 38(12B). L1547–L1547. 6 indexed citations
12.
Ridgway, M. C., K. M. Yu, C. J. Glover, et al.. (1999). Composition-dependent bond lengths in crystalline and amorphizedGexSi1−xalloys. Physical review. B, Condensed matter. 60(15). 10831–10836. 33 indexed citations
13.
Heitz, T., C. Godet, J.E. Bourée, et al.. (1998). Role of RF Power and Gas Mixture in Some Optical and Photoluminescence Properties of Dual-Plasma a-C:H Films. MRS Proceedings. 508. 1 indexed citations
14.
Godet, C., T. Heitz, J.E. Bourée, B. Drévillon, & C. Clerc. (1998). Growth and composition of dual-plasma polymer-like amorphous carbon films. Journal of Applied Physics. 84(7). 3919–3932. 30 indexed citations
15.
Nakagawa, Sachiko, L. Thomé, Hiroshi Saito, & C. Clerc. (1997). The 3-D profiling of B ions implanted into Si. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 121(1-4). 36–39. 2 indexed citations
16.
Nakagawa, Sachiko, Hiroshi Saito, L. Thomé, & C. Clerc. (1997). The two-dimensional profiling of light ions into crystal. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 127-128. 248–251. 2 indexed citations
17.
Clerc, C., H. Bernas, J. Chaumont, et al.. (1997). Erbium doping of Si via ion-beam-induced epitaxial crystallization: another route to room-temperature photoluminescence. Thin Solid Films. 294(1-2). 223–226. 4 indexed citations
18.
Guedj, C., J. Boulmer, D. Bouchier, et al.. (1996). Bulk and surface structural properties of Si1−x−yGexCy layers processed on Si(001) by pulsed laser induced epitaxy. Applied Surface Science. 102. 28–32. 2 indexed citations
19.
Etemadi, R., C. Godet, J. Perrin, et al.. (1996). Hydrogen incorporation in dual-mode PECVD amorphous silicon oxide thin films. Surface and Coatings Technology. 80(1-2). 8–12. 12 indexed citations
20.
Bernas, H., J. Chaumont, E. Cottereau, et al.. (1992). Progress report on Aramis, the 2 MV tandem at Orsay. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 62(3). 416–420. 65 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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