Mario Saggio

1.9k total citations · 1 hit paper
65 papers, 1.5k citations indexed

About

Mario Saggio is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Mario Saggio has authored 65 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Electrical and Electronic Engineering, 25 papers in Atomic and Molecular Physics, and Optics and 8 papers in Condensed Matter Physics. Recurrent topics in Mario Saggio's work include Silicon Carbide Semiconductor Technologies (48 papers), Semiconductor materials and devices (35 papers) and Semiconductor materials and interfaces (24 papers). Mario Saggio is often cited by papers focused on Silicon Carbide Semiconductor Technologies (48 papers), Semiconductor materials and devices (35 papers) and Semiconductor materials and interfaces (24 papers). Mario Saggio collaborates with scholars based in Italy, Switzerland and Czechia. Mario Saggio's co-authors include Fabrizio Roccaforte, Filippo Giannazzo, Patrick Fiorenza, Raffaella Lo Nigro, Giuseppe Greco, V. Raineri, Ferdinando Iucolano, E. Rimini, Alfonso Patti and Marilena Vivona and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of The Electrochemical Society.

In The Last Decade

Mario Saggio

64 papers receiving 1.4k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

2017 426 citations Fabrizio Roccaforte, Patrick Fiorenza et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Mario Saggio Italy	17	1.2k	362	355	298	231	65	1.5k
Adrian R. Powell United States	21	1.3k 1.1×	346 1.0×	443 1.2×	120 0.4×	189 0.8×	71	1.5k
Dominique Planson France	16	1.1k 0.9×	363 1.0×	222 0.6×	93 0.3×	144 0.6×	140	1.3k
L.S. Tan Singapore	16	751 0.6×	312 0.9×	247 0.7×	512 1.7×	359 1.6×	73	1.1k
Anne‐Marie Papon France	21	952 0.8×	423 1.2×	399 1.1×	99 0.3×	109 0.5×	62	1.2k
Christophe Raynaud France	16	1.1k 0.9×	314 0.9×	289 0.8×	77 0.3×	126 0.5×	80	1.3k
Hiromu Shiomi Japan	17	825 0.7×	691 1.9×	259 0.7×	262 0.9×	200 0.9×	57	1.3k
Haruhiko Udono Japan	20	664 0.5×	555 1.5×	728 2.1×	125 0.4×	95 0.4×	111	1.2k
M. Bhatnagar United States	8	1.5k 1.2×	231 0.6×	524 1.5×	116 0.4×	175 0.8×	15	1.7k
M. Voelskow Germany	18	918 0.7×	621 1.7×	286 0.8×	95 0.3×	76 0.3×	124	1.2k
J. Kretchmer United States	21	1.0k 0.8×	257 0.7×	354 1.0×	449 1.5×	217 0.9×	42	1.3k

Countries citing papers authored by Mario Saggio

Since Specialization

Citations

This map shows the geographic impact of Mario Saggio's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mario Saggio with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mario Saggio more than expected).

Fields of papers citing papers by Mario Saggio

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mario Saggio. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mario Saggio. The network helps show where Mario Saggio may publish in the future.

Co-authorship network of co-authors of Mario Saggio

This figure shows the co-authorship network connecting the top 25 collaborators of Mario Saggio. A scholar is included among the top collaborators of Mario Saggio based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mario Saggio. Mario Saggio is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Fiorenza, Patrick, et al.. (2024). Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 358. 45–49. 1 indexed citations

Saggio, Mario, et al.. (2024). Innovative Solutions to Make Driving Safer, Greener and More Connected. 1–6. 1 indexed citations

Pulvirenti, Mario, et al.. (2024). Gate Resistance Integration in SiC MOSFETs: Performance Simulations under Different Implementation Methods. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 358. 127–132. 1 indexed citations

Fiorenza, Patrick, et al.. (2023). Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps. Materials Science in Semiconductor Processing. 169. 107866–107866. 3 indexed citations

Pulvirenti, Mario, et al.. (2020). Thermal Model Development for SiC MOSFETs Robustness Analysis under Repetitive Short Circuit Tests. P.1–P.10. 2 indexed citations

Saggio, Mario. (2019). 4H-Silicon Carbide MOSFETs for very high end applications: requirements and technology solutions. 1 indexed citations

Smecca, Emanuele, Massimo Zimbone, Corrado Bongiorno, et al.. (2019). Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact. Materialia. 9. 100528–100528. 18 indexed citations

Pulvirenti, Mario, et al.. (2019). Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis. Materials science forum. 963. 788–791. 6 indexed citations

Roccaforte, Fabrizio, Marilena Vivona, Giuseppe Greco, et al.. (2018). Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology. Materials science forum. 924. 339–344. 16 indexed citations

10.

Roccaforte, Fabrizio, Patrick Fiorenza, Giuseppe Greco, et al.. (2014). Challenges for energy efficient wide band gap semiconductor power devices. physica status solidi (a). 211(9). 2063–2071. 113 indexed citations

11.

Giannazzo, Filippo, Patrick Fiorenza, Mario Saggio, & Fabrizio Roccaforte. (2014). Nanoscale Characterization of SiC Interfaces and Devices. Materials science forum. 778-780. 407–413. 3 indexed citations

12.

Roccaforte, Fabrizio, Patrick Fiorenza, Giuseppe Greco, et al.. (2014). Recent advances on dielectrics technology for SiC and GaN power devices. Applied Surface Science. 301. 9–18. 131 indexed citations

13.

Fiorenza, Patrick, Alessia Frazzetto, A. Guarnera, Mario Saggio, & Fabrizio Roccaforte. (2014). Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors. Applied Physics Letters. 105(14). 44 indexed citations

14.

Frazzetto, Alessia, Filippo Giannazzo, Raffaella Lo Nigro, et al.. (2011). Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC. Nanoscale Research Letters. 6(1). 158–158. 11 indexed citations

15.

Raineri, V., Mario Saggio, F. Frisina, & E. Rimini. (2003). Evolution of void layers induced by multiple He implants. 1. 130–133. 2 indexed citations

16.

Galluzzo, A., M. Melito, Salvatore Musumeci, Mario Saggio, & A. Raciti. (2002). A new high voltage power MOSFET for power conversion applications. 5. 2966–2973. 15 indexed citations

17.

Saggio, Mario, et al.. (2002). MDmesh/sup TM/: innovative technology for high voltage Power MOSFETs. 65–68. 41 indexed citations

18.

Raineri, V., S. Coffa, Mario Saggio, F. Frisina, & E. Rimini. (1999). Radiation damage–He interaction in He implanted Si during bubble formation and their evolution in voids. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 147(1-4). 292–297. 15 indexed citations

19.

Torrisi, L., G. Ciavola, Mario Saggio, V. Privitera, & E. Rimini. (1996). RBS and ion channelling surface analysis by 8.0 MeV lithium beams. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 382(1-2). 365–369. 1 indexed citations

20.

Privitera, V., V. Raineri, Mario Saggio, F. Priolo, & E. Rimini. (1995). Mask edge effects in high energy implants: dopant and defect distributions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 96(1-2). 144–149. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact