B. Pichaud

1.1k total citations
109 papers, 879 citations indexed

About

B. Pichaud is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, B. Pichaud has authored 109 papers receiving a total of 879 indexed citations (citations by other indexed papers that have themselves been cited), including 85 papers in Electrical and Electronic Engineering, 55 papers in Atomic and Molecular Physics, and Optics and 36 papers in Materials Chemistry. Recurrent topics in B. Pichaud's work include Silicon and Solar Cell Technologies (54 papers), Semiconductor materials and interfaces (48 papers) and Semiconductor materials and devices (25 papers). B. Pichaud is often cited by papers focused on Silicon and Solar Cell Technologies (54 papers), Semiconductor materials and interfaces (48 papers) and Semiconductor materials and devices (25 papers). B. Pichaud collaborates with scholars based in France, Russia and Italy. B. Pichaud's co-authors include G. Regula, M. Lancin, E. B. Yakimov, D. Mangelinck, P. Gas, Hosni Idrissi, Ο. Thomas, M. Texier, S. Binetti and S. Pizzini and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

B. Pichaud

106 papers receiving 853 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Pichaud France 17 633 388 330 98 97 109 879
T.A. Nguyen Tan France 18 487 0.8× 708 1.8× 281 0.9× 159 1.6× 74 0.8× 59 927
L. Muehlhoff United States 8 545 0.9× 228 0.6× 326 1.0× 64 0.7× 42 0.4× 9 757
S. Fisson France 16 403 0.6× 204 0.5× 415 1.3× 171 1.7× 40 0.4× 45 734
B. Pivac Croatia 14 786 1.2× 268 0.7× 670 2.0× 193 2.0× 39 0.4× 79 1.1k
Masashi Suezawa Japan 17 784 1.2× 401 1.0× 487 1.5× 41 0.4× 39 0.4× 107 956
H. L. Glass United States 17 634 1.0× 398 1.0× 394 1.2× 68 0.7× 70 0.7× 57 910
D. L. Williamson United States 17 602 1.0× 116 0.3× 589 1.8× 67 0.7× 84 0.9× 37 800
C. Grattepain France 13 343 0.5× 254 0.7× 329 1.0× 43 0.4× 39 0.4× 41 583
P. K. Lim Hong Kong 13 481 0.8× 151 0.4× 586 1.8× 58 0.6× 48 0.5× 30 820
C. D. Capio United States 13 465 0.7× 286 0.7× 381 1.2× 126 1.3× 64 0.7× 17 733

Countries citing papers authored by B. Pichaud

Since Specialization
Citations

This map shows the geographic impact of B. Pichaud's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Pichaud with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Pichaud more than expected).

Fields of papers citing papers by B. Pichaud

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Pichaud. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Pichaud. The network helps show where B. Pichaud may publish in the future.

Co-authorship network of co-authors of B. Pichaud

This figure shows the co-authorship network connecting the top 25 collaborators of B. Pichaud. A scholar is included among the top collaborators of B. Pichaud based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Pichaud. B. Pichaud is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yakimov, E. B., G. Regula, & B. Pichaud. (2013). Cathodoluminescence and electron beam induced current investigations of stacking faults mechanically introduced in 4H-SiC in the brittle domain. Journal of Applied Physics. 114(8). 15 indexed citations
2.
Texier, M., et al.. (2013). Structural disordering and extended defects produced by He-implantation in silicon carbide. Journal of Physics D Applied Physics. 46(48). 485105–485105. 9 indexed citations
3.
Pichaud, B., et al.. (2013). Characterizing and modeling the evolution of silicon oxide precipitates during thermal cycles. Journal of Crystal Growth. 372. 138–144. 4 indexed citations
4.
Canino, Mariaconcetta, G. Regula, Ming Xu, et al.. (2011). Roles of local He concentration and Si sample orientation on cavity growth in amorphous silicon. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics. 91(34). 4324–4331. 1 indexed citations
5.
Capello, Luciana, et al.. (2010). Light scattering from dislocations in silicon. Journal of Applied Physics. 108(9). 5 indexed citations
6.
Lancin, M., M. Texier, G. Regula, & B. Pichaud. (2009). Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics. 89(15). 1251–1266. 18 indexed citations
7.
Canino, Mariaconcetta, G. Regula, M. Lancin, et al.. (2008). Cavities at the Si projected range by high dose and energy Si ion implantation in Si. Materials Science and Engineering B. 159-160. 153–156. 2 indexed citations
8.
Canino, Mariaconcetta, et al.. (2008). Defect engineering via ion implantation to control B diffusion in Si. Materials Science and Engineering B. 159-160. 338–341. 7 indexed citations
9.
Regula, G., et al.. (2007). Silver Nanocrystals at Cavities Created by High Energy Helium Implantation in Bulk Silicon. MRS Proceedings. 994. 1 indexed citations
10.
Lancin, M., G. Regula, J. Douin, et al.. (2006). Investigation of mechanical stress induced-double stacking faults in (11-20) N-doped 4H-SiC combining optical and transmission electron microscopy, contrast simulation, and dislocations core reconstruction. Materials science forum. 527. 379. 1 indexed citations
11.
Pirouz, P., et al.. (2006). Nitrogen doping and multiplicity of stacking faults in SiC. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics. 86(29-31). 4685–4697. 10 indexed citations
12.
13.
Idrissi, Hosni, G. Regula, M. Lancin, J. Douin, & B. Pichaud. (2005). Study of Shockley partial dislocation mobility in highly N‐doped 4H‐SiC by cantilever bending. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(6). 1998–2003. 16 indexed citations
14.
Pichaud, B., A. Claverie, Daniel Alquier, Hans Richter, & M. Kittler. (2005). Gettering and Defect Engineering in Semiconductor Technology XI. Trans Tech Publications Ltd. eBooks. 3 indexed citations
15.
Lancin, M., et al.. (2005). Structural characterization of double stacking faults induced by cantilever bending in nitrogen-doped 4H-SiC. Philosophical Magazine Letters. 85(5). 259–267. 11 indexed citations
16.
Pichaud, B., et al.. (1999). Elemental Dislocation Mechanisms Involved in the Relaxation of Heteroepitaxial Semiconducting Systems. physica status solidi (a). 171(1). 251–265. 16 indexed citations
17.
Pichaud, B., et al.. (1992). Dislocations as Sinks for Self-Interstitials in Gold Doped Float Zone Silicon. MRS Proceedings. 262. 1 indexed citations
18.
Castaing, J., et al.. (1989). Dislocation multiplication in GaAs : inhibition by doping. Revue de Physique Appliquée. 24(8). 779–793. 17 indexed citations
19.
Pichaud, B., et al.. (1986). Identification of Burgers vectors along <111> in In-doped GaAs, by X-ray transmission topography and image simulation. Journal of Applied Crystallography. 19(2). 140–141. 4 indexed citations
20.
Pichaud, B., et al.. (1979). On the origin of disclocations observed by X-ray topography during microdeformation tests on f.c.c. metals. Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 39(3). 341–353. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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