Takahiro Morikawa

474 total citations
33 papers, 372 citations indexed

About

Takahiro Morikawa is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Takahiro Morikawa has authored 33 papers receiving a total of 372 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 21 papers in Materials Chemistry and 6 papers in Polymers and Plastics. Recurrent topics in Takahiro Morikawa's work include Phase-change materials and chalcogenides (21 papers), Chalcogenide Semiconductor Thin Films (12 papers) and Advanced Memory and Neural Computing (8 papers). Takahiro Morikawa is often cited by papers focused on Phase-change materials and chalcogenides (21 papers), Chalcogenide Semiconductor Thin Films (12 papers) and Advanced Memory and Neural Computing (8 papers). Takahiro Morikawa collaborates with scholars based in Japan, United States and United Kingdom. Takahiro Morikawa's co-authors include Motoyasu Terao, Takeo Ohta, N. Takaura, M. Kinoshita, Takasumi Ohyanagi, M. Tai, Akio Shima, Takashi Ishigaki, Kenji Shiraishi and Masaaki Araidai and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and Solid-State Electronics.

In The Last Decade

Takahiro Morikawa

31 papers receiving 358 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Takahiro Morikawa Japan 12 329 239 88 54 33 33 372
N. Takaura Japan 14 353 1.1× 338 1.4× 126 1.4× 54 1.0× 24 0.7× 41 441
D. Kau United States 6 246 0.7× 211 0.9× 88 1.0× 43 0.8× 32 1.0× 9 292
I. Tortorelli Italy 11 362 1.1× 336 1.4× 96 1.1× 89 1.6× 37 1.1× 17 388
T. Lowrey United States 8 373 1.1× 348 1.5× 77 0.9× 99 1.8× 35 1.1× 12 423
Nam-Yeal Lee South Korea 10 326 1.0× 349 1.5× 89 1.0× 96 1.8× 66 2.0× 23 376
Hyeon-Kyun Noh South Korea 8 419 1.3× 302 1.3× 116 1.3× 40 0.7× 31 0.9× 12 453
Daolin Cai China 12 401 1.2× 399 1.7× 118 1.3× 76 1.4× 56 1.7× 46 461
Jeung-hyun Jeong South Korea 12 327 1.0× 357 1.5× 75 0.9× 88 1.6× 46 1.4× 25 403
Bob Johnson United States 4 261 0.8× 282 1.2× 71 0.8× 66 1.2× 44 1.3× 5 344
P.K. Tan Singapore 8 405 1.2× 333 1.4× 75 0.9× 87 1.6× 115 3.5× 56 481

Countries citing papers authored by Takahiro Morikawa

Since Specialization
Citations

This map shows the geographic impact of Takahiro Morikawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Takahiro Morikawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Takahiro Morikawa more than expected).

Fields of papers citing papers by Takahiro Morikawa

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Takahiro Morikawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Takahiro Morikawa. The network helps show where Takahiro Morikawa may publish in the future.

Co-authorship network of co-authors of Takahiro Morikawa

This figure shows the co-authorship network connecting the top 25 collaborators of Takahiro Morikawa. A scholar is included among the top collaborators of Takahiro Morikawa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Takahiro Morikawa. Takahiro Morikawa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Morikawa, Takahiro, et al.. (2024). Performance Improvement for 3.3 kV 1000 A High-Power Density Full-SiC Power Modules With Sintered Copper Die Attach. IEEE Journal of Emerging and Selected Topics in Power Electronics. 12(5). 4550–4561. 2 indexed citations
2.
Morikawa, Takahiro, Yuki Morita, Rie Watanabe, et al.. (2022). Bromisoval-induced bromism with status epilepticus mimicking Wernicke’s encephalopathy: report of two cases. BMC Neurology. 22(1). 181–181. 8 indexed citations
3.
Homma, Yasuhiro, et al.. (2020). Bowing-head sign: rare but detectable in pre-catastrophic hip implant failure. Archives of Orthopaedic and Trauma Surgery. 140(12). 2085–2089. 1 indexed citations
4.
Watanabe, Naoki, et al.. (2019). 1.2 kV silicon carbide Schottky barrier diode embedded MOSFETs with extension structure and titanium-based single contact. Japanese Journal of Applied Physics. 59(2). 26502–26502. 10 indexed citations
5.
Morikawa, Takahiro, Shintaroh Sato, & Akio Shima. (2019). Fabrication and Characterization of 3.3-kV SiC DMOSFET with Self-Aligned Channels Formed by Tilted Ion Implantation. Materials science forum. 963. 390–393. 1 indexed citations
6.
Morikawa, Takahiro, Takashi Ishigaki, & Akio Shima. (2017). Design of self-aligned 3.3-kV DMOSFET using tilted ion implantation. 351–354. 4 indexed citations
7.
Takaura, N., et al.. (2015). A 4F2-cross-point phase change memory using nano-crystalline doped GeSbTe material. Japanese Journal of Applied Physics. 54(4S). 04DD01–04DD01. 4 indexed citations
8.
9.
Tai, M., et al.. (2015). Fabrication process for pillar GeTe/Sb2Te3superlattice topological-switching random access memory. Japanese Journal of Applied Physics. 54(5S). 05ED01–05ED01. 7 indexed citations
10.
11.
Ohyanagi, Takasumi, et al.. (2014). Non-Melting Phase Change Memory – Topological-Switching RAM (TRAM). ECS Transactions. 64(14). 77–81. 3 indexed citations
12.
13.
Shintani, Toshimichi, et al.. (2013). ×10 Fast write, 80% energy saving temperature controlling set method for multi-level cell phase change memories to solve the scaling blockade. Solid-State Electronics. 81. 78–85. 5 indexed citations
14.
15.
Morikawa, Takahiro, Takasumi Ohyanagi, M. Kitamura, et al.. (2012). A low power phase change memory using low thermal conductive doped-Ge<inf>2</inf>Sb<inf>2</inf>Te <inf>5</inf> with nano-crystalline structure. 31.4.1–31.4.4. 14 indexed citations
16.
Shintani, Toshimichi, et al.. (2011). Properties of Low-Power Phase-Change Device with GeTe/Sb 2Te 3 Superlattice Material. 1 indexed citations
17.
Morikawa, Takahiro, Hirokazu Moriya, Tomio Iwasaki, et al.. (2007). Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention. 307–310. 22 indexed citations
18.
Sasago, Y., M. Kinoshita, Takahiro Morikawa, et al.. (2006). Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode. Symposium on VLSI Technology. 109(133). 24–25. 29 indexed citations
19.
Matsui, Y., Osamu Tonomura, Takahiro Morikawa, et al.. (2006). Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories. 1–4. 21 indexed citations
20.
Shioiri, Satoshi, et al.. (2002). A 10 Gb/s SiGe bipolar framer/demultiplexer for SDH systems. 202–203. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026