N. Takaura

545 total citations
41 papers, 441 citations indexed

About

N. Takaura is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, N. Takaura has authored 41 papers receiving a total of 441 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 33 papers in Materials Chemistry and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in N. Takaura's work include Phase-change materials and chalcogenides (31 papers), Chalcogenide Semiconductor Thin Films (19 papers) and Advanced Memory and Neural Computing (13 papers). N. Takaura is often cited by papers focused on Phase-change materials and chalcogenides (31 papers), Chalcogenide Semiconductor Thin Films (19 papers) and Advanced Memory and Neural Computing (13 papers). N. Takaura collaborates with scholars based in Japan, United States and United Kingdom. N. Takaura's co-authors include Takasumi Ohyanagi, Takahiro Morikawa, Kenji Shiraishi, Masaaki Araidai, M. Kitamura, M. Kinoshita, M. Tai, Masahiro Moniwa, Hirokazu Moriya and T. Kawahara and has published in prestigious journals such as Applied Physics Letters, Japanese Journal of Applied Physics and Review of Scientific Instruments.

In The Last Decade

N. Takaura

40 papers receiving 427 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Takaura Japan 14 353 338 126 54 47 41 441
Shaoan Yan China 12 266 0.8× 173 0.5× 28 0.2× 31 0.6× 14 0.3× 49 342
Roberto Bez Italy 11 494 1.4× 390 1.2× 112 0.9× 91 1.7× 5 0.1× 23 580
Hubert Hody Belgium 13 428 1.2× 169 0.5× 63 0.5× 50 0.9× 39 488
Takashi Eshita Japan 10 222 0.6× 159 0.5× 6 0.0× 32 0.6× 14 0.3× 35 300
Dae-Hwan Ahn South Korea 13 609 1.7× 417 1.2× 135 1.1× 75 1.4× 37 662
D. V. Negrov Russia 10 356 1.0× 227 0.7× 12 0.1× 42 0.8× 5 0.1× 22 430
Michael DiBattista United States 7 304 0.9× 165 0.5× 46 0.4× 26 0.5× 2 0.0× 24 353
Chun‐Yen Chang Taiwan 13 466 1.3× 202 0.6× 57 0.5× 28 0.5× 63 515
Jeung-hyun Jeong South Korea 12 327 0.9× 357 1.1× 75 0.6× 88 1.6× 25 403
Sandrine Martin United States 9 511 1.4× 126 0.4× 177 1.4× 29 0.5× 4 0.1× 20 571

Countries citing papers authored by N. Takaura

Since Specialization
Citations

This map shows the geographic impact of N. Takaura's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Takaura with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Takaura more than expected).

Fields of papers citing papers by N. Takaura

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Takaura. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Takaura. The network helps show where N. Takaura may publish in the future.

Co-authorship network of co-authors of N. Takaura

This figure shows the co-authorship network connecting the top 25 collaborators of N. Takaura. A scholar is included among the top collaborators of N. Takaura based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Takaura. N. Takaura is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Takaura, N., et al.. (2015). A 4F2-cross-point phase change memory using nano-crystalline doped GeSbTe material. Japanese Journal of Applied Physics. 54(4S). 04DD01–04DD01. 4 indexed citations
2.
3.
Tai, M., et al.. (2015). Fabrication process for pillar GeTe/Sb2Te3superlattice topological-switching random access memory. Japanese Journal of Applied Physics. 54(5S). 05ED01–05ED01. 7 indexed citations
4.
5.
Ohyanagi, Takasumi, et al.. (2014). GeTe sequences in superlattice phase change memories and their electrical characteristics. Applied Physics Letters. 104(25). 59 indexed citations
6.
Ohyanagi, Takasumi, et al.. (2013). Superlattice Phase Change Memory Fabrication Process for Back End of Line Devices. Japanese Journal of Applied Physics. 52(5S3). 05FF01–05FF01. 19 indexed citations
7.
Ohyanagi, Takasumi & N. Takaura. (2013). Characteristics of Nano-Crystalline Ge2Sb2Te5 Material for Phase Change Memory. ECS Transactions. 50(34). 39–42. 1 indexed citations
8.
Takaura, N., Takasumi Ohyanagi, M. Kitamura, et al.. (2013). Charge injection Super-lattice Phase Change Memory for low power and high density storage device applications. 11 indexed citations
9.
Morikawa, Takahiro, Takasumi Ohyanagi, M. Kitamura, et al.. (2012). A low power phase change memory using low thermal conductive doped-Ge<inf>2</inf>Sb<inf>2</inf>Te <inf>5</inf> with nano-crystalline structure. 31.4.1–31.4.4. 14 indexed citations
10.
Ono, Kenji, et al.. (2008). Resistive Switching Ion-Plug Memory for 32-nm Technology Node and Beyond. 1 indexed citations
11.
Kotabe, Akira, et al.. (2007). A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100μA Cell Write Current. IEICE Technical Report; IEICE Tech. Rep.. 107(1). 23–28. 1 indexed citations
12.
Morikawa, Takahiro, Hirokazu Moriya, Tomio Iwasaki, et al.. (2007). Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention. 307–310. 22 indexed citations
13.
Osada, Kensuke, Akira Kotabe, Y. Matsui, et al.. (2007). A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100&#x003BC;A Cell Write Current. 474–616. 23 indexed citations
14.
Sasago, Y., M. Kinoshita, Takahiro Morikawa, et al.. (2006). Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode. Symposium on VLSI Technology. 109(133). 24–25. 29 indexed citations
15.
Osada, Kensuke, T. Kawahara, R. Takemura, et al.. (2006). Phase change RAM operated with 1.5-V CMOS as low cost embedded memory. 424–427. 11 indexed citations
16.
Matsui, Y., Osamu Tonomura, Takahiro Morikawa, et al.. (2006). Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories. 1–4. 21 indexed citations
17.
Takaura, N., Y. Matsui, Osamu Tonomura, et al.. (2006). Measurement method for transient programming current of 1T1R phase-change memory. 43–46. 2 indexed citations
18.
Takaura, N.. (2002). Analysis of Boron Penetration and Gate Depletion Using Dual-Gate PMOSFETs for High Performance G-Bit DRAM Design. IEICE Transactions on Electronics. 85(5). 1138–1145. 1 indexed citations
19.
Pianetta, P., N. Takaura, S. Brennan, et al.. (1995). Total reflection x-ray fluorescence spectroscopy using synchrotron radiation for wafer surface trace impurity analysis (invited). Review of Scientific Instruments. 66(2). 1293–1297. 32 indexed citations
20.
Brennan, S., N. Takaura, P. Pianetta, et al.. (1994). Wide band-pass approaches to total-reflection X-ray fluorescence using synchrotron radiation. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 347(1-3). 417–421. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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