N. Takaura

545 citations

41 papers · 441 indexed · h-index 14

Impact in

Polymers and Plastics top 10%
- Transition Metal Oxide Nanomaterials
Materials Chemistry
- Phase-change materials and chalcogenides
- Solid-state spectroscopy and crystallography

Papers in

Surfaces, Coatings and Films 6
- Electron and X-Ray Spectroscopy Techniques 6
Materials Chemistry 33
- Phase-change materials and chalcogenides 31

Co-authors: Takasumi Ohyanagi Takahiro Morikawa Kenji Shiraishi Masaaki Araidai M. Kitamura M. Kinoshita M. Tai Masahiro Moniwa
Journals: Japanese Journal of Applied Physics (6 papers)IEICE Transactions on Electronics (1 paper)Applied Physics Letters (1 paper)Review of Scientific Instruments (1 paper)AIP Advances (1 paper)
Partner nations: Japan United States United Kingdom

In The Last Decade

N. Takaura

40 papers receiving 427 citations

Peers

Countries citing papers authored by N. Takaura

Since Specialization

Citations

This map shows the geographic impact of N. Takaura's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Takaura with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Takaura more than expected).

Fields of papers citing papers by N. Takaura

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Takaura. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Takaura. The network helps show where N. Takaura may publish in the future.

Co-authorship network

The 25 scholars most cited alongside N. Takaura, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with N. Takaura Line = papers co-authored together N. Takaura links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A 4F²-cross-point phase change memory using nano-crystalline doped GeSbTe material Japanese Journal of Applied Physics ·N. Takaura, Samira Museli, M. Tai, Takasumi Ohyanagi, 신용태, Takahiro Morikawa	2015	4
2	A 50-nm 1.2-V Ge<inf>x</inf>Te<inf>1−x</inf>/Sb<inf>2</inf>Te<inf>3</inf> superlattice topological-switching random-access memory (TRAM) M. Tai, Takasumi Ohyanagi, M. Kinoshita, Takahiro Morikawa, 신용태, Filipe Antoine. Khatchadourian, Hiroki Shirakawa, Masaaki Araidai, Kenji Shiraishi, N. Takaura	2015	4
3	Fabrication process for pillar GeTe/Sb₂Te₃superlattice topological-switching random access memory Japanese Journal of Applied Physics ·M. Tai, Samira Museli, Takasumi Ohyanagi, Takahiro Morikawa, 신용태, N. Takaura	2015	7
4	55-µA Ge<inf>x</inf>Te<inf>1−x</inf>/Sb<inf>2</inf>Te<inf>3</inf> superlattice topological-switching random access memory (TRAM) and study of atomic arrangement in Ge-Te and Sb-Te structures N. Takaura, Takasumi Ohyanagi, M. Tai, M. Kinoshita, 신용태, Takahiro Morikawa, Hideki Shirakawa, Masaaki Araidai, Kenji Shiraishi, Yuta Saito, Junji Tominaga	2014	12
5	GeTe sequences in superlattice phase change memories and their electrical characteristics Applied Physics Letters ·Takasumi Ohyanagi, M. Kitamura, Masaaki Araidai, Melissa Ilyse Rassas, N. Takaura, Kenji Shiraishi	2014	59
6	Superlattice Phase Change Memory Fabrication Process for Back End of Line Devices Japanese Journal of Applied Physics ·Takasumi Ohyanagi, N. Takaura, James A. Miller, M. Tai, Samira Museli, 신용태, Takahiro Morikawa, Junji Tominaga	2013	19
7	Characteristics of Nano-Crystalline Ge₂Sb₂Te₅ Material for Phase Change Memory ECS Transactions ·Takasumi Ohyanagi, N. Takaura	2013	1
8	Charge injection Super-lattice Phase Change Memory for low power and high density storage device applications N. Takaura, Takasumi Ohyanagi, M. Kitamura, M. Tai, M. Kinoshita, 신용태, Takahiro Morikawa, Melissa Ilyse Rassas, Masaaki Araidai, Koichi Kamiya, Takao A. Yamamoto, Kenji Shiraishi	2013	11
9	A low power phase change memory using low thermal conductive doped-Ge<inf>2</inf>Sb<inf>2</inf>Te <inf>5</inf> with nano-crystalline structure Takahiro Morikawa, 신용태, Takasumi Ohyanagi, M. Kitamura, M. Kinoshita, M. Tai, N. Takaura	2012	14
10	Resistive Switching Ion-Plug Memory for 32-nm Technology Node and Beyond Kenji Ono, 李苏霞, Yasumasa Fujisaki, R. Takemura, Motoyasu Terao, N. Takaura	2008	1
11	A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100μA Cell Write Current IEICE Technical Report; IEICE Tech. Rep. ·Akira Kotabe, Chris Sawh, Esben Kjeldbæk, Kenichi Osada, 刘岳衡, Masoumeh Mehni, N. Takaura, Masahiro Moniwa, T. Kawahara	2007	1
12	Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention Takahiro Morikawa, Hirokazu Moriya, Tomio Iwasaki, M. Matsuoka, Karen Gomi, Masahiro Moniwa, Tomohiro Koga, N. Takaura, 李苏霞, M. Kinoshita, Masoumeh Mehni, Paul Hing, (unknown), Francesca Strutt, Akira Kotabe, Motoyasu Terao	2007	22
13	A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100μA Cell Write Current 諭北村, Esben Kjeldbæk, Kensuke Osada, Akira Kotabe, Y. Matsui, Masoumeh Mehni, N. Takaura, Masahiro Moniwa, T. Kawahara	2007	23
14	Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode Symposium on VLSI Technology ·Y. Sasago, M. Kinoshita, Takahiro Morikawa, 李苏霞, 諭北村, Toshiyuki Mine, Akio Shima, Yasumasa Fujisaki, Haruki Kume, Hirokazu Moriya, N. Takaura, Kazuyoshi Torii	2006	29
15	Phase change RAM operated with 1.5-V CMOS as low cost embedded memory Kensuke Osada, T. Kawahara, R. Takemura, Esben Kjeldbæk, N. Takaura, Masoumeh Mehni, 李苏霞, Hirokazu Moriya, Masahiro Moniwa	2006	11
16	Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories Y. Matsui, 李苏霞, Osamu Tonomura, Takahiro Morikawa, M. Kinoshita, Yasumasa Fujisaki, Masoumeh Mehni, 諭北村, Motoyasu Terao, N. Takaura, Hirokazu Moriya, Tomio Iwasaki, Masahiro Moniwa, Tomohiro Koga	2006	21
17	Measurement method for transient programming current of 1T1R phase-change memory 李苏霞, N. Takaura, Masoumeh Mehni, Y. Matsui, Osamu Tonomura, Yasumasa Fujisaki, Esben Kjeldbæk, R. Takemura, Kensuke Osada, 諭北村, Hirokazu Moriya, Tomio Iwasaki, T. Kawahara, Motoyasu Terao, M. Matsuoka, Masahiro Moniwa	2006	2
18	Analysis of Boron Penetration and Gate Depletion Using Dual-Gate PMOSFETs for High Performance G-Bit DRAM Design IEICE Transactions on Electronics ·N. Takaura	2002	1
19	Total reflection x-ray fluorescence spectroscopy using synchrotron radiation for wafer surface trace impurity analysis (invited) Review of Scientific Instruments ·P. Pianetta, N. Takaura, S. Brennan, En Shun Ping, S. S. Laderman, A. Fischer-Colbrie, R. C. Goodlin, V. Bocharnikov, Michael C. Madden, David C. Wherry, J. B. Kortright	1995	32
20	Wide band-pass approaches to total-reflection X-ray fluorescence using synchrotron radiation Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·S. Brennan, En Shun Ping, N. Takaura, P. Pianetta, S. S. Laderman, A. Fischer-Colbrie, Jeffrey B. Kortright, Michael C. Madden, David C. Wherry	1994	15

About N. Takaura

N. Takaura is a scholar working on Surfaces, Coatings and Films, Materials Chemistry, Radiation, Electrical and Electronic Engineering and Hardware and Architecture, having authored 41 papers that have together received 441 indexed citations. Recurring topics across this work include Phase-change materials and chalcogenides (31 papers), Chalcogenide Semiconductor Thin Films (19 papers), Advanced Memory and Neural Computing (13 papers), X-ray Spectroscopy and Fluorescence Analysis (6 papers), Electron and X-Ray Spectroscopy Techniques (6 papers), Transition Metal Oxide Nanomaterials (6 papers), Liquid Crystal Research Advancements (5 papers) and Perovskite Materials and Applications (4 papers). The work is most often cited by research in Polymers and Plastics (126 citations), Materials Chemistry (338 citations), Electrical and Electronic Engineering (353 citations), Radiation (47 citations) and Surfaces, Coatings and Films (33 citations). N. Takaura has collaborated with scholars based in Japan, United States and United Kingdom. Frequent co-authors include Takasumi Ohyanagi, Takahiro Morikawa, Kenji Shiraishi, Masaaki Araidai, M. Kitamura, M. Kinoshita, M. Tai, Masahiro Moniwa, Hirokazu Moriya and T. Kawahara. Their work appears in journals such as Japanese Journal of Applied Physics, IEICE Transactions on Electronics, Applied Physics Letters, Review of Scientific Instruments and AIP Advances.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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