Johan Bergsten

722 citations

24 papers · 558 indexed · h-index 12

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 19
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials 6
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 11
Electrical and Electronic Engineering top 10%
- Silicon Carbide Semiconductor Technologies 7
- Radio Frequency Integrated Circuit Design 7
- Semiconductor materials and devices 7
- Advancements in Semiconductor Devices and Circuit Design 5
Materials Chemistry
- Graphene research and applications 2

Co-authors: Niklas Rorsman Mattias Thorsell Tommy Ive André Dankert M. Venkata Kamalakar Saroj P. Dash Erik Janzén Olof Kordina
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: IEEE Transactions on Electron Devices (6 papers)Applied Physics Letters (4 papers)IEEE Electron Device Letters (3 papers)
Partner nations: Sweden China Hong Kong

In The Last Decade

Johan Bergsten

23 papers receiving 546 citations

Peers

Countries citing papers authored by Johan Bergsten

Since Specialization

Citations

This map shows the geographic impact of Johan Bergsten's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Johan Bergsten with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Johan Bergsten more than expected).

Fields of papers citing papers by Johan Bergsten

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Johan Bergsten. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Johan Bergsten. The network helps show where Johan Bergsten may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Johan Bergsten, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Johan Bergsten Line = papers co-authored together Johan Bergsten links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content IEEE Journal of the Electron Devices Society ·Chris Lyle Wasden,Johan Bergsten,Arsalan Pourkabirian,Jan Grahn	2024	1
2	Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique IEEE Transactions on Electron Devices ·Camilo Andrés Benítez Peláez,Johan Bergsten,木下郁夫,Vanya Darakchieva,Anna Malmros,Hans Hjelmgren,Mattias Thorsell,Niklas Rorsman	2024	0
3	Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs IEEE Electron Device Letters ·Chris Lyle Wasden,Arsalan Pourkabirian,Johan Bergsten,Niklas Wadefalk,Jan Grahn	2022	12
4	Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers IEEE Transactions on Electron Devices ·Tongde Huang,Oktay Boztaş,Johan Bergsten,Mattias Thorsell,Niklas Rorsman	2020	8
5	A power detector based on GaN high-electron-mobility transistors for a gigabit on–off keying demodulator at 90 GHz Japanese Journal of Applied Physics ·Tongde Huang,Ryozo MIZUTA,Johan Bergsten,Adrián Guillén,Niklas Rorsman	2019	1
6	A GaN–SiC hybrid material for high-frequency and power electronics Applied Physics Letters ·Jr‐Tai Chen,Johan Bergsten,Jun Lu,Erik Janzén,Mattias Thorsell,Lars Hultman,Niklas Rorsman,Olof Kordina	2018	64
7	Analysis of Lateral Thermal Coupling for GaN MMIC Technologies IEEE Transactions on Microwave Theory and Techniques ·J. Bremer,Johan Bergsten,Tim Klimzak,Torbjörn Nilsson,Niklas Rorsman,Sebastian Gustafsson,Axel M. Eriksson,Mattias Thorsell	2018	5
8	Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiN_x Passivations for Microwave GaN HEMTs IEEE Transactions on Electron Devices ·Tongde Huang,Johan Bergsten,Mattias Thorsell,Niklas Rorsman	2018	12
9	A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs Semiconductor Science and Technology ·Yen-Ku Lin,Johan Bergsten,Ana Arias,Anna Malmros,Alessio Lucarini,Ding-Yuan Chen,Olof Kordina,Herbert Zirath,Edward Yi Chang,Niklas Rorsman	2018	20
10	Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition Applied Physics Letters ·Tongde Huang,Huaxing Jiang,Johan Bergsten,Kei May Lau,Niklas Rorsman	2018	5
11	Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low- Noise Amplifiers Operation IEEE Electron Device Letters ·Tongde Huang,Oktay Boztaş,Johan Bergsten,Mattias Thorsell,Niklas Rorsman	2017	6
12	AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor Japanese Journal of Applied Physics ·Johan Bergsten,Wei Dou,Daniel Nilsson,Örjan Danielsson,Henrik Pedersen,Erik Janzén,Urban Forsberg,Niklas Rorsman	2016	8
13	Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Tongde Huang,Chao Liu,Johan Bergsten,Huaxing Jiang,Kei May Lau,Niklas Rorsman	2016	4
14	Low-Pressure-Chemical-Vapor-Deposition SiNx passivated AlGaN/GaN HEMTs for power amplifier application 2015 Asia-Pacific Microwave Conference (APMC) ·Tongde Huang,Oktay Boztaş,Anna Malmros,Johan Bergsten,Sebastian Gustafsson,Mattias Thorsell,Niklas Rorsman	2015	2
15	Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer IEEE Transactions on Electron Devices ·Sebastian Gustafsson,Alessio Lucarini,Johan Bergsten,Urban Forsberg,Mattias Thorsell,Erik Janzén,Niklas Rorsman	2015	68
16	Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiN_x Grown by Low Pressure Chemical Vapor Deposition IEEE Electron Device Letters ·Tongde Huang,Anna Malmros,Johan Bergsten,Sebastian Gustafsson,Oktay Boztaş,Mattias Thorsell,Niklas Rorsman	2015	25
17	Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results Applied Physics Letters ·Pedro Eladio Sánchez Rosell,Johan Bergsten,Daniel Nilsson,Örjan Danielsson,Henrik Pedersen,Niklas Rorsman,Erik Janzén,Urban Forsberg	2015	30
18	Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures Semiconductor Science and Technology ·Johan Bergsten,Anna Malmros,M. Tordjman,Piero Gamarra,C. Lacam,S Mandl-Kramer,Niklas Rorsman	2015	23
19	Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride Scientific Reports ·M. Venkata Kamalakar,André Dankert,Johan Bergsten,Tommy Ive,Saroj P. Dash	2014	131
20	Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures Applied Physics Letters ·M. Venkata Kamalakar,André Dankert,Johan Bergsten,Tommy Ive,Saroj P. Dash	2014	46

About Johan Bergsten

Johan Bergsten is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 24 papers that have together received 558 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (19 papers), Semiconductor Quantum Structures and Devices (11 papers), Silicon Carbide Semiconductor Technologies (7 papers), Radio Frequency Integrated Circuit Design (7 papers), Semiconductor materials and devices (7 papers), Ga2O3 and related materials (6 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Graphene research and applications (2 papers). The work is most often cited by research in Condensed Matter Physics (355 citations), Electronic, Optical and Magnetic Materials (164 citations), Atomic and Molecular Physics, and Optics (207 citations), Electrical and Electronic Engineering (379 citations) and Materials Chemistry (231 citations). Johan Bergsten has collaborated with scholars based in Sweden, China and Hong Kong. Frequent co-authors include Niklas Rorsman, Mattias Thorsell, Tommy Ive, André Dankert, M. Venkata Kamalakar, Saroj P. Dash, Erik Janzén, Olof Kordina, Jr‐Tai Chen and Urban Forsberg. Their work appears in journals such as IEEE Transactions on Electron Devices, Applied Physics Letters, IEEE Electron Device Letters, Japanese Journal of Applied Physics and Semiconductor Science and Technology.

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