Fabio Isa

961 total citations
53 papers, 814 citations indexed

About

Fabio Isa is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Fabio Isa has authored 53 papers receiving a total of 814 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 27 papers in Atomic and Molecular Physics, and Optics and 24 papers in Materials Chemistry. Recurrent topics in Fabio Isa's work include Nanowire Synthesis and Applications (20 papers), Semiconductor Quantum Structures and Devices (17 papers) and Silicon Nanostructures and Photoluminescence (16 papers). Fabio Isa is often cited by papers focused on Nanowire Synthesis and Applications (20 papers), Semiconductor Quantum Structures and Devices (17 papers) and Silicon Nanostructures and Photoluminescence (16 papers). Fabio Isa collaborates with scholars based in Switzerland, Italy and Czechia. Fabio Isa's co-authors include Giovanni Isella, H. von Känel, Leo Miglio, C.V. Falub, Philippe Niedermann, E. Müller, Anna Marzegalli, Roberto Bergamaschini, Daniel Chrastina and Francesco Montalenti and has published in prestigious journals such as Science, Physical Review Letters and Advanced Materials.

In The Last Decade

Fabio Isa

53 papers receiving 802 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Fabio Isa Switzerland 15 596 400 370 314 59 53 814
Anna Marzegalli Italy 16 590 1.0× 345 0.9× 401 1.1× 326 1.0× 43 0.7× 59 835
Federico Panciera France 17 519 0.9× 525 1.3× 403 1.1× 670 2.1× 40 0.7× 39 1.0k
E. Wintersberger Austria 13 442 0.7× 279 0.7× 418 1.1× 298 0.9× 25 0.4× 24 694
Tyler J. Grassman United States 20 1.2k 2.1× 374 0.9× 784 2.1× 294 0.9× 53 0.9× 97 1.4k
Rupert Schreiner Germany 13 575 1.0× 308 0.8× 249 0.7× 221 0.7× 37 0.6× 96 768
Enrique Barrigón Spain 16 804 1.3× 299 0.7× 368 1.0× 462 1.5× 53 0.9× 62 999
O. Kienzle Germany 18 630 1.1× 657 1.6× 635 1.7× 157 0.5× 81 1.4× 38 1.1k
T. Billon France 21 1.5k 2.6× 356 0.9× 568 1.5× 352 1.1× 78 1.3× 93 1.7k
Kasey J. Russell United States 14 415 0.7× 325 0.8× 408 1.1× 406 1.3× 257 4.4× 38 835
Takuya Hoshii Japan 18 667 1.1× 400 1.0× 197 0.5× 303 1.0× 36 0.6× 78 897

Countries citing papers authored by Fabio Isa

Since Specialization
Citations

This map shows the geographic impact of Fabio Isa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fabio Isa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fabio Isa more than expected).

Fields of papers citing papers by Fabio Isa

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fabio Isa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fabio Isa. The network helps show where Fabio Isa may publish in the future.

Co-authorship network of co-authors of Fabio Isa

This figure shows the co-authorship network connecting the top 25 collaborators of Fabio Isa. A scholar is included among the top collaborators of Fabio Isa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Fabio Isa. Fabio Isa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Isa, Fabio, J. A. Schmidt, S. Aghion, et al.. (2024). Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon. Journal of Applied Physics. 135(16). 3 indexed citations
2.
Isa, Fabio, et al.. (2022). The Radon transform as a tool for 3D reciprocal-space mapping of epitaxial microcrystals. Journal of Applied Crystallography. 55(4). 823–836. 4 indexed citations
3.
Isa, Fabio, Jörg Patscheider, Matthias Trottmann, et al.. (2022). Conductive n-type gallium nitride thin films prepared by sputter deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 40(4). 1 indexed citations
4.
Mishra, Neeraj, Chang Liu, Michael S. Fuhrer, et al.. (2019). p-Type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon Technologies. ACS Applied Nano Materials. 3(1). 830–841. 21 indexed citations
5.
Isa, Fabio, Giovanni Isella, Rolf Erni, et al.. (2019). Effect of thermal annealing on the interface quality of Ge/Si heterostructures. Scripta Materialia. 170. 52–56. 6 indexed citations
6.
Dasilva, Yadira Arroyo Rojas, Rolf Erni, Fabio Isa, et al.. (2019). Atomic-scale structural characterization of grain boundaries in epitaxial Ge/Si microcrystals by HAADF-STEM. Acta Materialia. 167. 159–166. 5 indexed citations
7.
Isa, Fabio, et al.. (2017). Three-dimensional SiGe/Si heterostructures: Switching the dislocation sign by substrate under-etching. Physical Review Materials. 1(7). 9 indexed citations
8.
Chèze, Caroline, M. Siekacz, Fabio Isa, et al.. (2016). Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices. Journal of Applied Physics. 120(12). 13 indexed citations
9.
Dasilva, Yadira Arroyo Rojas, Marta D. Rossell, Fabio Isa, et al.. (2016). Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substrates. Scripta Materialia. 127. 169–172. 11 indexed citations
10.
Bergamaschini, Roberto, Marco Salvalaglio, Andrea Scaccabarozzi, et al.. (2016). Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates. Journal of Crystal Growth. 440. 86–95. 11 indexed citations
11.
Groiß, Heiko, Martin Gläser, Anna Marzegalli, et al.. (2015). Burgers Vector Analysis of Vertical Dislocations in Ge Crystals by Large-Angle Convergent Beam Electron Diffraction. Microscopy and Microanalysis. 21(3). 637–645. 5 indexed citations
12.
Taboada, A. G., et al.. (2015). Heterointegration of InGaAs/GaAs quantum wells on micro-patterned Si substrates. Journal of Applied Physics. 118(7). 6 indexed citations
13.
Taboada, A. G., C.V. Falub, Fabio Isa, et al.. (2014). Strain relaxation of GaAs/Ge crystals on patterned Si substrates. Applied Physics Letters. 104(2). 20 indexed citations
14.
Falub, C.V., Daniel Chrastina, Fabio Isa, et al.. (2013). Perfect crystals grown from imperfect interfaces. Scientific Reports. 3(1). 2276–2276. 31 indexed citations
15.
Marzegalli, Anna, Fabio Isa, Heiko Groiß, et al.. (2013). Unexpected Dominance of Vertical Dislocations in High‐Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning. Advanced Materials. 25(32). 4408–4412. 54 indexed citations
16.
Isa, Fabio, Anna Marzegalli, A. G. Taboada, et al.. (2013). Onset of vertical threading dislocations in Si1−xGex/Si (001) at a critical Ge concentration. APL Materials. 1(5). 14 indexed citations
17.
Bonera, Emiliano, Fabio Pezzoli, E. Grilli, et al.. (2012). Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy. Nanoscale Research Letters. 7(1). 633–633. 5 indexed citations
18.
Paul, Douglas J., Antonio Samarelli, L. Ferre Llin, et al.. (2012). Si/SiGe nanoscale engineered thermoelectric materials for energy harvesting. ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam). 1–5. 1 indexed citations
19.
Falub, C.V., A. G. Taboada, Fabio Isa, et al.. (2012). Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon. BOA (University of Milano-Bicocca). 94. 45–50. 1 indexed citations
20.
Carroll, Lee, Stefan Neuenschwander, H. Sigg, et al.. (2012). Direct-Gap Gain and Optical Absorption in Germanium Correlated to the Density of Photoexcited Carriers, Doping, and Strain. Physical Review Letters. 109(5). 57402–57402. 78 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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