T. Hackbarth

1.7k total citations
107 papers, 1.3k citations indexed

About

T. Hackbarth is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, T. Hackbarth has authored 107 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 98 papers in Electrical and Electronic Engineering, 50 papers in Atomic and Molecular Physics, and Optics and 9 papers in Biomedical Engineering. Recurrent topics in T. Hackbarth's work include Advancements in Semiconductor Devices and Circuit Design (71 papers), Semiconductor materials and devices (68 papers) and Semiconductor Quantum Structures and Devices (35 papers). T. Hackbarth is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (71 papers), Semiconductor materials and devices (68 papers) and Semiconductor Quantum Structures and Devices (35 papers). T. Hackbarth collaborates with scholars based in Germany, France and United Kingdom. T. Hackbarth's co-authors include H.-J. Herzog, U. König, H. von Känel, G. Höck, S. Mantl, B. Holländer, Giovanni Isella, E. Müller, H. Trinkaus and Daniel Chrastina and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

T. Hackbarth

99 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Hackbarth Germany 20 1.2k 592 205 165 57 107 1.3k
Nobuaki Takahashi Japan 20 1.3k 1.1× 385 0.7× 144 0.7× 91 0.6× 44 0.8× 163 1.5k
Kensuke Ogawa Japan 17 703 0.6× 403 0.7× 357 1.7× 170 1.0× 31 0.5× 96 964
Masatoshi Suzuki Japan 25 1.7k 1.4× 483 0.8× 120 0.6× 166 1.0× 62 1.1× 166 2.0k
Mial E. Warren United States 19 845 0.7× 609 1.0× 166 0.8× 26 0.2× 28 0.5× 69 1.0k
Yuangang Lu China 18 750 0.6× 567 1.0× 217 1.1× 215 1.3× 39 0.7× 128 1.1k
J. H. Magerlein United States 19 623 0.5× 283 0.5× 156 0.8× 87 0.5× 49 0.9× 51 1.2k
Marek Turowski United States 18 1.0k 0.9× 279 0.5× 109 0.5× 204 1.2× 31 0.5× 93 1.2k
Shulamit Edelstein Spain 4 748 0.6× 321 0.5× 165 0.8× 95 0.6× 59 1.0× 6 963
M.R. Wordeman United States 20 1.9k 1.6× 279 0.5× 184 0.9× 122 0.7× 11 0.2× 69 2.0k
Liang Zhang China 25 1.5k 1.3× 1.2k 2.0× 307 1.5× 55 0.3× 26 0.5× 155 1.9k

Countries citing papers authored by T. Hackbarth

Since Specialization
Citations

This map shows the geographic impact of T. Hackbarth's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Hackbarth with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Hackbarth more than expected).

Fields of papers citing papers by T. Hackbarth

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Hackbarth. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Hackbarth. The network helps show where T. Hackbarth may publish in the future.

Co-authorship network of co-authors of T. Hackbarth

This figure shows the co-authorship network connecting the top 25 collaborators of T. Hackbarth. A scholar is included among the top collaborators of T. Hackbarth based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Hackbarth. T. Hackbarth is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Dickmann, Juergen, Nils Appenrodt, Carsten Brenk, et al.. (2014). Radar contribution to highly automated driving. 1715–1718. 29 indexed citations
3.
Fobelets, Kristel, J.E. Velázquez-Pérez, & T. Hackbarth. (2007). Study of MOS-gated strained-Si Buried Channel Field Effect Transistors. IETE Journal of Research. 53(3). 253–262.
4.
Wieser, U., et al.. (2005). Phonon-induced breakdown of negative bend resistance in an asymmetric Si∕SiGe cross junction. Applied Physics Letters. 87(25). 6 indexed citations
5.
Fobelets, Kristel, Wutthinan Jeamsaksiri, J.E. Velázquez-Pérez, et al.. (2004). Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies. Solid-State Electronics. 48(8). 1401–1406. 8 indexed citations
6.
Mironov, O. A., M. Myronov, D. R. Leadley, et al.. (2004). P-Si/sub 0.3/Ge/sub 0.7/and p-Si/sub 0.2/Ge/sub 0.8/ MOSFETs of enhanced performance. 557–560. 1 indexed citations
7.
Isella, Giovanni, Daniel Chrastina, B. Rössner, et al.. (2004). Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices. Solid-State Electronics. 48(8). 1317–1323. 109 indexed citations
8.
Fobelets, Kristel, et al.. (2003). Monolithic micropower amplifier using SiGe n -MODFET device. Electronics Letters. 39(12). 884–886. 9 indexed citations
9.
Berg, Michael C., et al.. (2002). Active circulator MMIC in CPW technology using quarter micron InAlAs/InGaAs/InP HFETs. TUbilio (Technical University of Darmstadt). 68–71. 9 indexed citations
10.
Luysberg, M., H. Trinkaus, B. Holländer, et al.. (2002). Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates. Journal of Applied Physics. 92(8). 4290–4295. 58 indexed citations
11.
Hackbarth, T., et al.. (2002). Sub 100 nm Gate Technologies for Si/SiGe Buried Channel RF Devices. 1 indexed citations
12.
Rosenblad, C., Thomas Graf, Alex Dommann, et al.. (2001). Low Energy Plasma Enhanced Chemical Vapour Deposition - Plasma Enhanced Deposition of Epitaxial Si and Sige. MRS Proceedings. 696. 1 indexed citations
13.
Aniel, F., P. Crozat, R. Adde, et al.. (2001). De-embedded ultra-low noise 0.1 µm gate lengthGe/Si 0.4 Ge 0.6 p -MODFET. Electronics Letters. 37(24). 1478–1479. 3 indexed citations
14.
Wieser, U., et al.. (2000). Nanoscale patterning of Si/SiGe heterostructures by electron-beam lithography and selective wet-chemical etching. Semiconductor Science and Technology. 15(8). 862–867. 15 indexed citations
15.
Höck, G., T. Hackbarth, H.-J. Herzog, et al.. (2000). 0.1 µm gate length p -type Ge/Si 0.4 Ge 0.6 MODFET with 135 GHz f max . Electronics Letters. 36(16). 1428–1429. 14 indexed citations
16.
Mantl, S., B. Holländer, R. Liedtke, et al.. (1999). Strain relaxation of epitaxial SiGe layers on Si(1 0 0) improved by hydrogen implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 147(1-4). 29–34. 45 indexed citations
17.
Hackbarth, T., et al.. (1999). High-frequency SiGe-n-MODFET for microwave applications. IEEE Microwave and Guided Wave Letters. 9(10). 410–412. 29 indexed citations
18.
Glück, Michael, T. Hackbarth, Martin Birk, et al.. (1998). Design and fabrication of Si/SiGe n-type MODFETs. Physica E Low-dimensional Systems and Nanostructures. 2(1-4). 763–767. 10 indexed citations
19.
Zeeb, E., et al.. (1994). Vertical-Cavity Laser Diodes with Low Threshold Current Densities. European Solid-State Device Research Conference. 711–714.
20.
Zeeb, E., et al.. (1994). Linewidth enhancement factor of vertical-cavity surface-emitting laser diodes. IEEE Photonics Technology Letters. 6(8). 921–923. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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