Rahim Faez

970 total citations
95 papers, 773 citations indexed

About

Rahim Faez is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Rahim Faez has authored 95 papers receiving a total of 773 indexed citations (citations by other indexed papers that have themselves been cited), including 65 papers in Electrical and Electronic Engineering, 52 papers in Materials Chemistry and 45 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Rahim Faez's work include Graphene research and applications (47 papers), Quantum and electron transport phenomena (26 papers) and Advancements in Semiconductor Devices and Circuit Design (25 papers). Rahim Faez is often cited by papers focused on Graphene research and applications (47 papers), Quantum and electron transport phenomena (26 papers) and Advancements in Semiconductor Devices and Circuit Design (25 papers). Rahim Faez collaborates with scholars based in Iran, Austria and Spain. Rahim Faez's co-authors include Mohammad Kazem Moravvej‐Farshi, Saeed Haji‐Nasiri, Mahdi Pourfath, Hans Kosina, Ghafar Darvish, Seyed Ebrahim Hosseini, Neophytos Neophytou, Morteza Fathipour, Zahra Hemmat and E. Moreno and has published in prestigious journals such as SHILAP Revista de lepidopterología, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Rahim Faez

87 papers receiving 746 citations

Peers

Rahim Faez

EEE

AMPO

CSE

J.R. Watling United Kingdom

S. Dröscher Switzerland

Katsuya Nomura Japan

Wenhu Liao China

S. Iordănescu Romania

S. K. Datta India

T.I. Chappell United States

X. H. Yan China

Tobias Frank Germany

D. Côté France

J.R. Watling United Kingdom

Rahim Faez

192 ×0.3

813 ×1.7

EEE

250 ×1.4

AMPO

124 ×1.0

46 ×1.2

CSE

Citations per year, relative to Rahim Faez Rahim Faez (= 1×) peers J.R. Watling

Countries citing papers authored by Rahim Faez

Since Specialization

Citations

This map shows the geographic impact of Rahim Faez's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Rahim Faez with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Rahim Faez more than expected).

Fields of papers citing papers by Rahim Faez

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Rahim Faez. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Rahim Faez. The network helps show where Rahim Faez may publish in the future.

Co-authorship network of co-authors of Rahim Faez

This figure shows the co-authorship network connecting the top 25 collaborators of Rahim Faez. A scholar is included among the top collaborators of Rahim Faez based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Rahim Faez. Rahim Faez is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Darvish, Ghafar, et al.. (2025). Interfacial and Electrical Properties of Si/APS/MAPbI₃ Heterostructure: An Ab Initio Study. The Journal of Physical Chemistry C. 129(8). 4172–4182. 1 indexed citations

Faez, Rahim, et al.. (2021). The most optimal barrier height of InGaN light-emitting diodes. Applied Physics A. 127(2). 2 indexed citations

Faez, Rahim, et al.. (2019). A Functional Study of a Bilayer Graphene Nanoribbon FET With Four Different Gate Insulators. IEEE Transactions on Nanotechnology. 18. 890–895. 2 indexed citations

Faez, Rahim, et al.. (2017). Spin FET Based on Graphene Nanoribbon in the Presence of Surface Roughness. IEEE Transactions on Electron Devices. 64(8). 3437–3442. 2 indexed citations

Goharrizi, Arash Yazdanpanah, et al.. (2017). Performance improvement of junctionless field effect transistors using p-GaAs/AlGaAs heterostructure. Superlattices and Microstructures. 110. 305–312. 8 indexed citations

Faez, Rahim, et al.. (2017). Modeling of a Vertical Tunneling Transistor Based on Graphene–MoS₂Heterostructure. IEEE Transactions on Electron Devices. 64(8). 3459–3465. 14 indexed citations

Faez, Rahim, et al.. (2017). A Computational Study on the Performance of Graphene Nanoribbon Field Effect Transistor. SHILAP Revista de lepidopterología. 2(3). 1–12. 2 indexed citations

Faez, Rahim, et al.. (2017). A computational study of vertical tunneling transistors based on graphene-WS2 heterostructure. Journal of Applied Physics. 121(21). 13 indexed citations

Hosseini, Seyed Ebrahim, et al.. (2016). A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio. AIP Advances. 6(9). 12 indexed citations

10.

Faez, Rahim, et al.. (2014). Dc and microwave noise characteristics of AlGaN/GaN HEMT with AlN and InGaN interlayers. 480–483. 4 indexed citations

11.

Faez, Rahim, et al.. (2013). Simulation of Carbon Nanotube Field Effect Transistor with Two Different Gate Insulator. Scientia Iranica. 20(6). 2332–2340. 1 indexed citations

12.

Faez, Rahim, et al.. (2013). Influence of Physical Parameters on Microwave Noise Characteristics of Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs. International Journal of Applied Physics and Mathematics. 442–445. 2 indexed citations

13.

Moravvej‐Farshi, Mohammad Kazem, et al.. (2012). Time Domain Analysis of Graphene Nanoribbon Interconnects Based on Transmission Line Model. SHILAP Revista de lepidopterología. 13 indexed citations

14.

Faez, Rahim, et al.. (2012). Optical ASK and FSK Modulation By Using Quantum Well Transistor Lasers. 6(2). 105–111. 2 indexed citations

15.

Faez, Rahim, et al.. (2012). Large Signal Circuit Model of Two-Section Gain Lever Quantum Dot Laser. Chinese Physics Letters. 29(11). 114207–114207. 2 indexed citations

16.

Faez, Rahim, et al.. (2011). A small signal circuit model of two mode InAs/GaAs quantum dot laser. IEICE Electronics Express. 8(4). 245–251. 1 indexed citations

17.

Faez, Rahim, et al.. (2009). An Analytic Model for Kink Effect in I-V Characteristics of Single Electron Transistors. SHILAP Revista de lepidopterología. 1 indexed citations

18.

Dousti, Massoud, et al.. (2009). An improved macro-model for simulation of single electron transistor (SET) using HSPICE. 33. 1000–1004. 7 indexed citations

19.

Hosseini, Seyed Ebrahim, Rahim Faez, & Hadi Sadoghi Yazdi. (2007). Quantum Corrections in the Drift-Diffusion Model. Japanese Journal of Applied Physics. 46(11R). 7247–7247. 1 indexed citations

20.

Hosseini, Seyed Ebrahim & Rahim Faez. (2000). EFFECTIVE CLASSICAL POTENTIAL FOR QUANTUM SEMICONDUCTOR DEVICES. Scientia Iranica. 7(34). 232–237.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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