Nelson E. Lourenco

806 total citations
59 papers, 619 citations indexed

About

Nelson E. Lourenco is a scholar working on Electrical and Electronic Engineering, Astronomy and Astrophysics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Nelson E. Lourenco has authored 59 papers receiving a total of 619 indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Electrical and Electronic Engineering, 6 papers in Astronomy and Astrophysics and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Nelson E. Lourenco's work include Radiation Effects in Electronics (32 papers), Semiconductor materials and devices (26 papers) and Radio Frequency Integrated Circuit Design (23 papers). Nelson E. Lourenco is often cited by papers focused on Radiation Effects in Electronics (32 papers), Semiconductor materials and devices (26 papers) and Radio Frequency Integrated Circuit Design (23 papers). Nelson E. Lourenco collaborates with scholars based in United States, Germany and Iran. Nelson E. Lourenco's co-authors include John D. Cressler, Zachary E. Fleetwood, Dale McMorrow, Jeffrey H. Warner, Ani Khachatrian, S. Büchner, Troy England, Adilson S. Cardoso, Ickhyun Song and Pauline Paki and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

Nelson E. Lourenco

55 papers receiving 597 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Nelson E. Lourenco United States 16 596 64 58 26 25 59 619
Zachary E. Fleetwood United States 15 498 0.8× 36 0.6× 43 0.7× 15 0.6× 8 0.3× 47 522
Akil K. Sutton United States 18 873 1.5× 47 0.7× 107 1.8× 45 1.7× 6 0.2× 56 890
R. Krithivasan United States 17 665 1.1× 49 0.8× 88 1.5× 99 3.8× 12 0.5× 28 674
Saeed Zeinolabedinzadeh United States 12 383 0.6× 35 0.5× 20 0.3× 27 1.0× 35 1.4× 45 397
Troy England United States 12 239 0.4× 32 0.5× 40 0.7× 14 0.5× 35 280
Rudolf Lachner Germany 16 842 1.4× 84 1.3× 12 0.2× 71 2.7× 51 2.0× 46 875
H. Shindou Japan 12 340 0.6× 15 0.2× 76 1.3× 6 0.2× 3 0.1× 25 360
Su-Wei Chang United States 9 142 0.2× 43 0.7× 10 0.2× 21 0.8× 49 2.0× 20 203
F.-X. Guerre Netherlands 10 282 0.5× 8 0.1× 32 0.6× 11 0.4× 15 0.6× 16 305
Andrea Malignaggi Germany 16 803 1.3× 52 0.8× 8 0.1× 66 2.5× 54 2.2× 96 825

Countries citing papers authored by Nelson E. Lourenco

Since Specialization
Citations

This map shows the geographic impact of Nelson E. Lourenco's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nelson E. Lourenco with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nelson E. Lourenco more than expected).

Fields of papers citing papers by Nelson E. Lourenco

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nelson E. Lourenco. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nelson E. Lourenco. The network helps show where Nelson E. Lourenco may publish in the future.

Co-authorship network of co-authors of Nelson E. Lourenco

This figure shows the co-authorship network connecting the top 25 collaborators of Nelson E. Lourenco. A scholar is included among the top collaborators of Nelson E. Lourenco based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Nelson E. Lourenco. Nelson E. Lourenco is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Teng, Jeffrey W., et al.. (2024). A 50-GHz SiGe Frequency Quadrupler With 42-dBc Harmonic Rejection and 17% Peak Total Efficiency. IEEE Microwave and Wireless Technology Letters. 34(12). 1371–1374.
2.
Lee, Sang‐Hoon, et al.. (2024). A 43–84 GHz, Wideband Frequency Doubler with a Symmetric, AC-Terminated Transformer Balun. 162–165. 1 indexed citations
3.
Ildefonso, Adrian, George N. Tzintzarov, Nelson E. Lourenco, et al.. (2019). Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam. IEEE Transactions on Nuclear Science. 67(1). 91–98. 12 indexed citations
4.
Zeinolabedinzadeh, Saeed, Ahmet Çağrı Ulusoy, Michael A. Oakley, Nelson E. Lourenco, & John D. Cressler. (2017). A 0.3–15 GHz SiGe LNA With >1 THz Gain-Bandwidth Product. IEEE Microwave and Wireless Components Letters. 27(4). 380–382. 12 indexed citations
5.
Ildefonso, Adrian, Zachary E. Fleetwood, Nelson E. Lourenco, et al.. (2016). The effects of total ionizing dose on the transient response of SiGe BiCMOS technologies. 1–5. 3 indexed citations
6.
Fleetwood, Zachary E., Adrian Ildefonso, Adilson S. Cardoso, et al.. (2016). Total Ionizing Dose Effects on a High-Voltage (>30V) Complementary SiGe on SOI Technology. IEEE Transactions on Nuclear Science. 64(1). 277–284. 8 indexed citations
7.
Lourenco, Nelson E., et al.. (2016). Operation of SiGe HBTs Down to 70 mK. IEEE Electron Device Letters. 38(1). 12–15. 29 indexed citations
8.
Ildefonso, Adrian, Ickhyun Song, Zachary E. Fleetwood, et al.. (2016). Modeling single-event transient propagation in a SiGe BiCMOS direct-conversion receiver. 1–5. 2 indexed citations
9.
Song, Ickhyun, Nelson E. Lourenco, Zachary E. Fleetwood, et al.. (2016). An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers. IEEE Transactions on Nuclear Science. 63(2). 1099–1108. 15 indexed citations
10.
Zeinolabedinzadeh, Saeed, Ickhyun Song, Nelson E. Lourenco, et al.. (2015). Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology. IEEE Transactions on Nuclear Science. 62(6). 2657–2665. 16 indexed citations
11.
Song, Ickhyun, Zachary E. Fleetwood, Nelson E. Lourenco, et al.. (2015). The Role of Negative Feedback Effects on Single-Event Transients in SiGe HBT Analog Circuits. IEEE Transactions on Nuclear Science. 62(6). 2599–2605. 7 indexed citations
12.
Fleetwood, Zachary E., et al.. (2015). Optimizing the vertical profile of SiGe HBTs to mitigate radiation-induced upsets. 1. 72–75. 2 indexed citations
13.
Fleetwood, Zachary E., Nelson E. Lourenco, Adrian Ildefonso, et al.. (2015). An Investigation of the SET Response of Devices and Differential Pairs in a 32-nm SOI CMOS Technology. IEEE Transactions on Nuclear Science. 62(6). 2643–2649. 2 indexed citations
14.
Cardoso, Adilson S., Partha Sarathi Chakraborty, Adrian Ildefonso, et al.. (2015). On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology. IEEE Transactions on Electron Devices. 62(4). 1127–1135. 5 indexed citations
15.
Cardoso, Adilson S., Zachary E. Fleetwood, Nelson E. Lourenco, et al.. (2014). Mitigation of Total Dose Performance Degradation in an 8–18 GHz SiGe Reconfigurable Receiver. IEEE Transactions on Nuclear Science. 61(6). 3226–3235. 3 indexed citations
16.
Cardoso, Adilson S., Partha Sarathi Chakraborty, Nelson E. Lourenco, et al.. (2014). Evaluating the Effects of Single Event Transients in FET-Based Single-Pole Double-Throw RF Switches. IEEE Transactions on Nuclear Science. 61(2). 756–765. 11 indexed citations
17.
England, Troy, et al.. (2014). Cold-capable, radiation-hardened SiGe BiCMOS wireline transceivers. IEEE Aerospace and Electronic Systems Magazine. 29(3). 32–41. 3 indexed citations
18.
England, Troy, et al.. (2013). An on-chip SiGe HBT characterization circuit for use in self-healing RF systems. 203–206. 1 indexed citations
19.
Cardoso, Adilson S., Partha Sarathi Chakraborty, Nelson E. Lourenco, et al.. (2013). Total Ionizing Dose Response of Triple-Well FET-Based Wideband, High-Isolation RF Switches in a 130 nm SiGe BiCMOS Technology. IEEE Transactions on Nuclear Science. 60(4). 2567–2573. 12 indexed citations
20.
Phillips, S.D., Kurt A. Moen, Nelson E. Lourenco, & John D. Cressler. (2012). Single-Event Response of the SiGe HBT Operating in Inverse-Mode. IEEE Transactions on Nuclear Science. 59(6). 2682–2690. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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