T. Kure

1.5k total citations
69 papers, 1.0k citations indexed

About

T. Kure is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, T. Kure has authored 69 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 66 papers in Electrical and Electronic Engineering, 12 papers in Biomedical Engineering and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in T. Kure's work include Semiconductor materials and devices (51 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). T. Kure is often cited by papers focused on Semiconductor materials and devices (51 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). T. Kure collaborates with scholars based in Japan, United Kingdom and United States. T. Kure's co-authors include S. Tachi, Kazunori Tsujimoto, H. Sunami, K. Itoh, Fabrício Murai, Eiji Takeda, Takashi Kobayashi, T. Toyabe, N. Hashimoto and Kazuhiko Seki and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Proceedings of the IEEE.

In The Last Decade

T. Kure

63 papers receiving 975 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
T. Kure Japan	17	921	218	161	146	78	69	1.0k
K.R. Hofmann Germany	17	931 1.0×	315 1.4×	253 1.6×	95 0.7×	40 0.5×	64	1.0k
J.Y.-C. Sun United States	25	1.9k 2.1×	487 2.2×	215 1.3×	167 1.1×	24 0.3×	102	2.0k
G. Raghavan India	13	468 0.5×	144 0.7×	225 1.4×	188 1.3×	34 0.4×	40	676
J.H. Comfort United States	22	1.8k 1.9×	537 2.5×	295 1.8×	218 1.5×	28 0.4×	62	1.8k
G. Declerck Belgium	18	1.1k 1.2×	401 1.8×	140 0.9×	89 0.6×	12 0.2×	83	1.2k
L. Forbes United States	17	1.1k 1.2×	432 2.0×	136 0.8×	90 0.6×	12 0.2×	98	1.1k
E. Augendre France	20	1.3k 1.4×	446 2.0×	144 0.9×	286 2.0×	13 0.2×	110	1.4k
L. Henry United States	13	586 0.6×	211 1.0×	76 0.5×	51 0.3×	14 0.2×	62	678
B.M. Welch United States	19	868 0.9×	394 1.8×	95 0.6×	61 0.4×	19 0.2×	53	941
T. Poiroux France	25	2.0k 2.2×	181 0.8×	109 0.7×	458 3.1×	24 0.3×	125	2.1k

Countries citing papers authored by T. Kure

Since Specialization

Citations

This map shows the geographic impact of T. Kure's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Kure with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Kure more than expected).

Fields of papers citing papers by T. Kure

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Kure. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Kure. The network helps show where T. Kure may publish in the future.

Co-authorship network of co-authors of T. Kure

This figure shows the co-authorship network connecting the top 25 collaborators of T. Kure. A scholar is included among the top collaborators of T. Kure based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Kure. T. Kure is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Shiba, T., Y. Tamaki, T. Kure, et al.. (2003). 29 ps ECL circuits using U-groove isolated SICOS technology. 225–228. 2 indexed citations

Kure, T., et al.. (2003). Highly anisotropic microwave plasma etching for high packing density silicon patterns. 48–49. 1 indexed citations

Aoki, Masashi, Tatsuya Ishii, Teizo Yoshimura, et al.. (2002). 0.1 mu m CMOS devices using low-impurity-channel transistors (LICT). 939–941. 10 indexed citations

Uchino, T., Takahiro Nakamura, M. Kondo, et al.. (2002). A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology. 443–446. 3 indexed citations

Kaga, T., et al.. (2002). A new SSS-OSELO technology for 0.15-μm low-defect isolation. 117–118.

Tamaki, Y., et al.. (2002). Advanced device process technology for 0.3 mu m self-aligned bipolar LSIs. 166–168. 1 indexed citations

Yano, Kazuo, T. Ishii, Toshiyuki Mine, et al.. (1999). Single-electron memory for giga-to-tera bit storage. Proceedings of the IEEE. 87(4). 633–651. 134 indexed citations

Tachi, S., Masaru Izawa, Kazunori Tsujimoto, et al.. (1998). Near-surface interactions and their etching-reaction model in metal plasma-assisted etching. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 16(1). 250–259. 14 indexed citations

Wada, Yasuo, T. Kure, Toshiyuki Yoshimura, et al.. (1994). Quantum transport in polycrystalline silicon ‘‘slit nano wire’’. Applied Physics Letters. 65(5). 624–626. 4 indexed citations

10.

Kitsukawa, G., Masashi Horiguchi, T. Kawahara, et al.. (1993). 256 Mb DRAM technologies for file applications. 48–49. 22 indexed citations

11.

Kure, T., et al.. (1992). Recessed Memory Array Technology for a Double Cylindrical Stacked Capacitor Cell of 256M DRAM. IEICE Transactions on Electronics. 1313–1322. 2 indexed citations

12.

Aoki, Masakazu, Tatsuya Ishii, Teizo Yoshimura, et al.. (1992). Design and performance of 0.1- mu m CMOS devices using low-impurity-channel transistors (LICT's). IEEE Electron Device Letters. 13(1). 50–52. 33 indexed citations

13.

Hatano, Mutsuko, et al.. (1990). Carrier reflection at the superconductor-semiconductor boundary observed using a coplanar-point-contact injector. Physical review. B, Condensed matter. 41(10). 7274–7276. 17 indexed citations

14.

Kimura, S., Y. Kawamoto, T. Kure, et al.. (1990). A diagonal active-area stacked capacitor DRAM cell with storage capacitor on bit line. IEEE Transactions on Electron Devices. 37(3). 737–743. 9 indexed citations

15.

Kawamoto, Y., S. Kimura, Norio Hasegawa, et al.. (1988). Half micron technology for an experimental 16 Mbit DRAM using I-line stepper.. 17–18. 4 indexed citations

16.

Kure, T., et al.. (1988). Impact of the gate-drain overlapped device (GOLD) for deep submicrometer VLSI. IEEE Transactions on Electron Devices. 35(12). 2088–2093. 45 indexed citations

17.

Kaga, T., Y. Kawamoto, T. Kure, et al.. (1987). A 4.2&#181;m<sup>2</sup>Half-V<inf>CC</inf>sheath-plate-capacitor DRAM cell with self-aligned buried plate-wiring. 332–335. 2 indexed citations

18.

Sunami, H., T. Kure, K. Yagi, et al.. (1985). Scaling Considerations and Dielectric Breakdown Improvement of a Corrugated Capacitor Cell for a Future dRAM. IEEE Journal of Solid-State Circuits. 20(1). 216–223. 2 indexed citations

19.

Sunami, H., T. Kure, K. Yagi, et al.. (1985). Scaling considerations and dielectric breakdown improvement of a corrugated capacitor cell for a future dRAM. IEEE Transactions on Electron Devices. 32(2). 296–303. 10 indexed citations

20.

Sakai, Yoshio, et al.. (1984). A Buried Giga-Ohm Resistor(BGR) Load Static RAM Cell. Symposium on VLSI Technology. 6–7. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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