Takayoshi Shimura

3.2k total citations
226 papers, 2.7k citations indexed

About

Takayoshi Shimura is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Takayoshi Shimura has authored 226 papers receiving a total of 2.7k indexed citations (citations by other indexed papers that have themselves been cited), including 202 papers in Electrical and Electronic Engineering, 46 papers in Materials Chemistry and 45 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Takayoshi Shimura's work include Semiconductor materials and devices (160 papers), Silicon Carbide Semiconductor Technologies (70 papers) and Thin-Film Transistor Technologies (47 papers). Takayoshi Shimura is often cited by papers focused on Semiconductor materials and devices (160 papers), Silicon Carbide Semiconductor Technologies (70 papers) and Thin-Film Transistor Technologies (47 papers). Takayoshi Shimura collaborates with scholars based in Japan, United States and Belgium. Takayoshi Shimura's co-authors include Heiji Watanabe, Takuji Hosoi, J. Harada, Akitaka Yoshigoe, Mikito Nozaki, Katsuhiro Kutsuki, M. Umeno, Yuki Nakano, Takashi Nakamura and Shuhei Mitani and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Takayoshi Shimura

218 papers receiving 2.6k citations

Peers

Takayoshi Shimura
Akira Yoshikawa Japan
Gabriel Ferro France
E. N. Mokhov Russia
Balaji Raghothamachar United States
K. Kuriyama Japan
R. Gwilliam United Kingdom
M. Brunel France
Jean Jordan‐Sweet United States
S. T. Pantelides United States
А. В. Осипов Russia
Akira Yoshikawa Japan
Takayoshi Shimura
Citations per year, relative to Takayoshi Shimura Takayoshi Shimura (= 1×) peers Akira Yoshikawa

Countries citing papers authored by Takayoshi Shimura

Since Specialization
Citations

This map shows the geographic impact of Takayoshi Shimura's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Takayoshi Shimura with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Takayoshi Shimura more than expected).

Fields of papers citing papers by Takayoshi Shimura

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Takayoshi Shimura. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Takayoshi Shimura. The network helps show where Takayoshi Shimura may publish in the future.

Co-authorship network of co-authors of Takayoshi Shimura

This figure shows the co-authorship network connecting the top 25 collaborators of Takayoshi Shimura. A scholar is included among the top collaborators of Takayoshi Shimura based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Takayoshi Shimura. Takayoshi Shimura is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kobayashi, Takuma, Mitsuru Sometani, Mitsuo Okamoto, et al.. (2024). Characterization of nitrided SiC(1 1 ‾ 00) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy. Materials Science in Semiconductor Processing. 175. 108251–108251. 6 indexed citations
2.
Shimura, Takayoshi, et al.. (2024). Oxygen-related defects in 4H-SiC from first principles. Applied Physics Express. 17(5). 51008–51008. 1 indexed citations
3.
Kobayashi, Takuma, et al.. (2023). Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation. Applied Physics Express. 17(1). 11003–11003. 6 indexed citations
4.
Kobayashi, Takuma, et al.. (2023). Formation of high-quality SiO2/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO2. Japanese Journal of Applied Physics. 62(5). 50903–50903. 5 indexed citations
5.
Shimura, Takayoshi, et al.. (2023). Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates. Japanese Journal of Applied Physics. 62(SC). SC1083–SC1083. 1 indexed citations
6.
Tanaka, Nobuyuki, et al.. (2023). Impact of Sn incorporation on sputter epitaxy of GeSn. Applied Physics Express. 16(9). 95502–95502. 1 indexed citations
7.
Kobayashi, Takuma, et al.. (2023). Reduction of interface and oxide traps in SiO2/GaN MOS structures by oxygen and forming gas annealing. Applied Physics Express. 16(3). 31004–31004. 5 indexed citations
8.
Hosoi, Takuji, Tsunenobu Kimoto, Mitsuru Sometani, et al.. (2022). Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors. Applied Physics Express. 15(6). 61003–61003. 6 indexed citations
9.
Nozaki, Mikito, Takuma Kobayashi, Akitaka Yoshigoe, et al.. (2022). Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(0001¯) substrates. Applied Physics Letters. 121(6). 1 indexed citations
10.
Hosoi, Takuji, Takuma Kobayashi, Mitsuru Sometani, et al.. (2022). Comprehensive physical and electrical characterizations of NO nitrided SiO 2 /4H-SiC(1120) interfaces. Japanese Journal of Applied Physics. 61(SC). SC1065–SC1065. 9 indexed citations
11.
Nozaki, Mikito, Takuma Kobayashi, Takuji Hosoi, et al.. (2022). Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing. Applied Physics Letters. 120(8). 17 indexed citations
12.
Kobayashi, Takuma, Takuji Hosoi, Mitsuru Sometani, et al.. (2022). Impact of nitridation on the reliability of 4H-SiC(1120) MOS devices. Applied Physics Express. 15(4). 41002–41002. 8 indexed citations
13.
Nakanishi, H., Iwao Kawayama, Masayoshi Tonouchi, et al.. (2021). Probing the surface potential of SiO2/4H-SiC(0001) by terahertz emission spectroscopy. Journal of Applied Physics. 130(11). 4 indexed citations
14.
Hosoi, Takuji, et al.. (2021). High-temperature CO2 treatment for improving electrical characteristics of 4H-SiC(0001) metal-oxide-semiconductor devices. Applied Physics Express. 14(10). 101001–101001. 11 indexed citations
15.
Hosoi, Takuji, et al.. (2021). Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation. Applied Physics Express. 14(9). 91006–91006. 9 indexed citations
16.
Nozaki, Mikito, et al.. (2021). Fixed-charge generation in SiO 2 /GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth. Japanese Journal of Applied Physics. 61(SC). SC1034–SC1034. 14 indexed citations
17.
Nozaki, Mikito, Takuji Hosoi, Tetsuo Narita, et al.. (2021). Inhibition of Mg activation in p-type GaN caused by thin AlGaN capping layer and impact of designing hydrogen desorption pathway. Applied Physics Express. 14(7). 71001–71001. 3 indexed citations
18.
Hosoi, Takuji, K. Watanabe, Mikito Nozaki, et al.. (2019). Mobility enhancement in recessed-gate AlGaN/GaN MOS-HFETs using an AlON gate insulator. Japanese Journal of Applied Physics. 58(SC). SCCD16–SCCD16. 10 indexed citations
19.
Sometani, Mitsuru, Takuji Hosoi, Tetsuo Hatakeyama, et al.. (2019). Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations. Applied Physics Letters. 115(13). 29 indexed citations
20.
Yamada, Takahiro, K. Watanabe, Mikito Nozaki, et al.. (2018). ゲート誘電体信頼性を改善した高品質GaNベース金属-酸化物-半導体デバイスのためのSiO 2 /GaNスタックにおけるGa酸化物層間成長とGa拡散の制御. Applied Physics Express. 11(1). 1–15701. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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