Kenji Ohmori

1.2k total citations
84 papers, 967 citations indexed

About

Kenji Ohmori is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Kenji Ohmori has authored 84 papers receiving a total of 967 indexed citations (citations by other indexed papers that have themselves been cited), including 75 papers in Electrical and Electronic Engineering, 25 papers in Biomedical Engineering and 18 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Kenji Ohmori's work include Semiconductor materials and devices (64 papers), Advancements in Semiconductor Devices and Circuit Design (47 papers) and Nanowire Synthesis and Applications (19 papers). Kenji Ohmori is often cited by papers focused on Semiconductor materials and devices (64 papers), Advancements in Semiconductor Devices and Circuit Design (47 papers) and Nanowire Synthesis and Applications (19 papers). Kenji Ohmori collaborates with scholars based in Japan, United States and Belgium. Kenji Ohmori's co-authors include Keisaku Yamada, Hiroshi Iwai, Kuniyuki Kakushima, Kenji Shiraishi, Toyohiro Chikyow, I. Petrov, David G. Cahill, K. Yamada, J. E. Greene and Yasuo Nara and has published in prestigious journals such as Nature, Advanced Materials and Nano Letters.

In The Last Decade

Kenji Ohmori

78 papers receiving 937 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Kenji Ohmori Japan 17 754 287 206 191 95 84 967
Akio Nishida Japan 25 1.3k 1.7× 613 2.1× 462 2.2× 332 1.7× 42 0.4× 115 1.8k
Santosh Kurinec United States 17 607 0.8× 372 1.3× 186 0.9× 184 1.0× 27 0.3× 82 824
A. Nejim United Kingdom 14 745 1.0× 245 0.9× 154 0.7× 162 0.8× 45 0.5× 74 887
M. Saito Japan 16 949 1.3× 159 0.6× 92 0.4× 240 1.3× 35 0.4× 67 1.1k
Michel Depas Belgium 13 1.6k 2.1× 399 1.4× 88 0.4× 261 1.4× 27 0.3× 27 1.6k
D. Lafond France 19 971 1.3× 219 0.8× 161 0.8× 133 0.7× 19 0.2× 71 1.1k
C. A. Lang United States 15 398 0.5× 142 0.5× 338 1.6× 645 3.4× 28 0.3× 25 911
Sven Zimmermann Germany 13 395 0.5× 226 0.8× 231 1.1× 376 2.0× 54 0.6× 48 859
T. Junno Sweden 11 326 0.4× 184 0.6× 290 1.4× 545 2.9× 37 0.4× 18 711
Irena Zubel Poland 19 924 1.2× 314 1.1× 830 4.0× 195 1.0× 26 0.3× 42 1.2k

Countries citing papers authored by Kenji Ohmori

Since Specialization
Citations

This map shows the geographic impact of Kenji Ohmori's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kenji Ohmori with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kenji Ohmori more than expected).

Fields of papers citing papers by Kenji Ohmori

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kenji Ohmori. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kenji Ohmori. The network helps show where Kenji Ohmori may publish in the future.

Co-authorship network of co-authors of Kenji Ohmori

This figure shows the co-authorship network connecting the top 25 collaborators of Kenji Ohmori. A scholar is included among the top collaborators of Kenji Ohmori based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kenji Ohmori. Kenji Ohmori is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ohmori, Kenji & Shuhei Amakawa. (2021). Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier. IEEE Journal of the Electron Devices Society. 9. 1227–1236. 3 indexed citations
2.
Ohmori, Kenji & Shuhei Amakawa. (2021). Direct White Noise Characterization of Short-Channel MOSFETs. IEEE Transactions on Electron Devices. 68(4). 1478–1482. 12 indexed citations
3.
Wei, Zhiqiang, Y. Katoh, K. Kawai, et al.. (2016). True random number generator using current difference based on a fractional stochastic model in 40-nm embedded ReRAM. 4.8.1–4.8.4. 63 indexed citations
4.
Ohmori, Kenji, et al.. (2015). Effect of aSiO2layer on the thermal transport properties of〈100〉Sinanowires: A molecular dynamics study. Physical Review B. 91(11). 27 indexed citations
5.
Niwa, M., et al.. (2014). Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias. IEEE Electron Device Letters. 35(1). 3–5. 4 indexed citations
6.
Kakushima, Kuniyuki, Kenji Ohmori, Keisaku Yamada, et al.. (2014). Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure. Optics Express. 22(2). 1997–1997. 2 indexed citations
7.
8.
Ohmori, Kenji, Wei Feng, S. Sato, et al.. (2011). Direct real-time observation of channel potential fluctuation correlated to random telegraph noise of drain current using nanowire MOSFETs with four-probe terminals. Symposium on VLSI Technology. 202–203. 2 indexed citations
9.
Matsuki, Takeo, et al.. (2011). Behavior of Low-Frequency Noise in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations. Japanese Journal of Applied Physics. 50(10S). 10PB04–10PB04. 1 indexed citations
10.
Iwai, Hiroshi, Kenji Natori, Kenji Shiraishi, et al.. (2011). Si Nanowire FET Technology. ECS Transactions. 35(3). 33–53. 2 indexed citations
11.
Ozawa, K., K. Tachi, Kuniyuki Kakushima, et al.. (2011). Si/Ni-Silicide Schottky junctions with atomically flat interfaces using NiSi<inf>2</inf> source. 231–234. 3 indexed citations
12.
Li, Wei, Kuniyuki Kakushima, Kenji Ohmori, et al.. (2011). Extraction of additional interfacial states of silicon nanowire field-effect transistors. Applied Physics Letters. 98(23). 11 indexed citations
13.
Ohmori, Kenji, Kenji Shiraishi, & Keisaku Yamada. (2010). Influence of carrier transport on drain-current variability of MOSFETs. 24. 879–882.
14.
Hasunuma, Ryu, Tsuyoshi Nomura, Kenji Ohmori, et al.. (2010). (Invited) Degradation in HfSiON Film Induced by Electrical Stress Application. ECS Transactions. 28(2). 263–272. 1 indexed citations
15.
16.
Hayashi, T., et al.. (2009). Analyses of Threshold Voltage Shift on Hole Injection in HfSiOx Films. Japanese Journal of Applied Physics. 48(5S1). 05DD03–05DD03. 4 indexed citations
17.
Umezawa, Naoto, Kenji Shiraishi, Kuniyuki Kakushima, et al.. (2008). Relation between Solubility of Silicon in High-k Oxides and the Effect of Fermi Level Pinning. ECS Transactions. 13(2). 15–20. 3 indexed citations
18.
Ohmori, Kenji, Parhat Ahmet, Michiko Yoshitake, et al.. (2007). Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures. Journal of Applied Physics. 101(8). 15 indexed citations
19.
Nakayama, Koji S., et al.. (2005). Chemical fingerprinting at the atomic level with scanning tunneling spectroscopy. Surface Science. 600(3). 716–723. 6 indexed citations
20.
Kodambaka, Suneel, S. V. Khare, W. Świȩch, et al.. (2004). Dislocation-driven surface dynamics on solids. Nature. 429(6987). 49–52. 34 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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