J. Oila

947 citations

22 papers · 794 indexed · h-index 14

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 13
- GaN-based semiconductor devices and materials 13
Mechanics of Materials 12
- Muon and positron interactions and applications 12

Co-authors: K. Saarinen P. Hautojärvi L. Liszkay V. Ranki Jani Kivioja S. Hautakangas D. Seghier M. Alatalo
Journals: Applied Physics Letters (7 papers)Physical review. B, Condensed matter (4 papers)Journal of Applied Physics (2 papers)Physica B Condensed Matter (2 papers)Journal of Crystal Growth (1 paper)
Partner nations: Finland United States Germany

In The Last Decade

J. Oila

22 papers receiving 771 citations

Peers

Countries citing papers authored by J. Oila

Since Specialization

Citations

This map shows the geographic impact of J. Oila's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Oila with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Oila more than expected).

Fields of papers citing papers by J. Oila

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Oila. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Oila. The network helps show where J. Oila may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Oila, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Oila Line = papers co-authored together J. Oila links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Magnetic resonance imaging ( MRI )‐guided transurethral ultrasound therapy of the prostate: a preclinical study with radiological and pathological correlation using customised MRI ‐based moulds British Journal of Urology ·Ari Partanen, Nitin Yerram, Hari Trivedi, Matthew R. Dreher, J. Oila, Anthony Hoang, Dmitry Volkin, Jeffrey W. Nix, Barış Türkbey, Marcelino Bernardo, Diana C. Haines, Compton J. Benjamin, W. Marston Linehan, Peter L. Choyke, Bradford J. Wood, Gösta Ehnholm, Aradhana M. Venkatesan, Peter A. Pinto	2013	25
2	Vacancy defects in epitaxial InN: identification and electrical properties Journal of Crystal Growth ·A. Laakso, J. Oila, A. Kemppinen, K. Saarinen, Werner Egger, L. Liszkay, P. Sperr, H. J. Lü, W. J. Schaff	2004	19
3	Vacancy defects in O-doped GaN grown by molecular-beam epitaxy: The role of growth polarity and stoichiometry Applied Physics Letters ·Antonio Millastre Benito, J. Oila, A. Laakso, K. Saarinen, A. J. Ptak, T. H. Myers	2004	20
4	Vacancy Defects as Compensating Centers in Mg-Doped GaN Physical Review Letters ·S. Hautakangas, J. Oila, M. Alatalo, K. Saarinen, L. Liszkay, D. Seghier, H. P. Gíslason	2003	113
5	Ga vacancies and grain boundaries in GaN Applied Physics Letters ·J. Oila, K. Saarinen, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. E. Twigg	2003	23
6	Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy Applied Physics Letters ·J. Oila, Jani Kivioja, V. Ranki, K. Saarinen, D. C. Look, R. J. Molnar, S. S. Park, S. K. Lee, Jeong-Yeol Han	2003	103
7	Publisher’s Note: “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy” [Appl. Phys. Lett. 82, 3433 (2003)] Applied Physics Letters ·J. Oila, Jani Kivioja, V. Ranki, K. Saarinen, D. C. Look, R. J. Molnar, S. S. Park, S. K. Lee, Jeong-Yeol Han	2003	2
8	Cation and anion vacancies in proton irradiated GaInP Journal of Applied Physics ·James Dekker, J. Oila, K. Saarinen, Antti Tukiainen, Tristan Woo, M. Pessa	2002	10
9	Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire Journal of Applied Physics ·P. Laukkanen, César Leandro Vais Copatti, Petteri Uusimaa, M. Pessa, J. Oila, S. Hautakangas, K. Saarinen, J. Likonen, Jaakko Keränen	2002	24
10	Target chamber for a slow positron beam: optimization of count rate and minimization of backscattering effects Applied Surface Science ·J. Oila, V. Ranki, Jani Kivioja, K. Saarinen, P. Hautojärvi	2002	8
11	Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers Physical review. B, Condensed matter ·J. Oila, V. Ranki, Jani Kivioja, K. Saarinen, P. Hautojärvi, J. Likonen, Jacek Baranowski, K. Pakuła, T. Suski, M. Leszczyński, I. Grzegory	2001	101
12	The stabilization of a positron lifetime spectrometer with a high-accuracy time reference Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·J. Nissilä, Maarit Karppinen, P. Bulthaup, J. Oila, K. Saarinen, P. Hautojärvi	2001	6
13	Native vacancies in nitrogen-doped and undoped ZnSe layers studied by positron annihilation Physical review. B, Condensed matter ·P. Desgardin, J. Oila, K. Saarinen, P. Hautojärvi, E. Tournié, J. P. Faurie, C. Corbel	2000	4
14	Study of the Effects of Mg and Be Co-Doping in GaN Layers physica status solidi (a) ·F. B. Naranjo, Y. V. Phani Kumari, J. L. Pau, Eliakim Prado, E. Calleja, Baakdah Fadi, J. Oila, K. Saarinen, Jaume Coll López	2000	13
15	Experimental identification of the doping deactivation mechanism in semiconductors: Application to nitrogen inZnS0.06Se0.94 Physical review. B, Condensed matter ·J. Oila, K. Saarinen, T. Laine, P. Hautojärvi, Petteri Uusimaa, M. Pessa, J. Likonen	1999	8
16	Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals Physica B Condensed Matter ·K. Saarinen, J. Nissilä, J. Oila, V. Ranki, Mikko Hakala, M. J. Puska, P. Hautojärvi, J. Likonen, T. Suski, I. Grzegory, B. Łucznik, S. Porowski	1999	23
17	The deactivation of nitrogen acceptors in ZnSxSe1−x and MgyZn1−ySxSe1−x studied by combining positron annihilation, SIMS, and CV measurements Physica B Condensed Matter ·J. Oila, K. Saarinen, T. Laine, P. Hautojärvi, Petteri Uusimaa, M. Pessa, J. Likonen	1999	1
18	Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy Applied Physics Letters ·K. Saarinen, ラムスペルガーウルス, J. Oila, P. Hautojärvi, C. Corbel, 鲍春梅, R.L. Aulombard	1998	85
19	Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy Physical review. B, Condensed matter ·E. Calleja, M. A. Sánchez-Garcı́a, Durga Basak, F.J. Sánchez, F. Calle, B. M. Kantelip, E. Muñoz, José Javier Serrano Olmedo, Luis Málaga, R Jayadurga, T. Laine, J. Oila, K. Saarinen, P. Hautojärvi, C.H. Molloy, D.J. Somerford, I. Harrison	1998	82
20	Positron annihilation states at interfaces: evidence of divacancies Journal of Physics Condensed Matter ·H. Kauppinen, C. Corbel, L. Liszkay, T. Laine, J. Oila, K. Saarinen, P. Hautojärvi, M.F. Barthe, G. Blondiaux	1997	16

About J. Oila

J. Oila is a scholar working on Condensed Matter Physics, Mechanics of Materials, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering and Urology, having authored 22 papers that have together received 794 indexed citations. Recurring topics across this work include Semiconductor materials and devices (16 papers), GaN-based semiconductor devices and materials (13 papers), Muon and positron interactions and applications (12 papers), Ga2O3 and related materials (6 papers), Graphene research and applications (3 papers), Particle Detector Development and Performance (2 papers), Inorganic Chemistry and Materials (2 papers) and Semiconductor Quantum Structures and Devices (1 paper). The work is most often cited by research in Condensed Matter Physics (632 citations), Electronic, Optical and Magnetic Materials (343 citations), Mechanics of Materials (232 citations), Electrical and Electronic Engineering (452 citations) and Materials Chemistry (292 citations). J. Oila has collaborated with scholars based in Finland, United States and Germany. Frequent co-authors include K. Saarinen, P. Hautojärvi, L. Liszkay, V. Ranki, Jani Kivioja, S. Hautakangas, D. Seghier, M. Alatalo, H. P. Gíslason and J. Likonen. Their work appears in journals such as Applied Physics Letters, Physical review. B, Condensed matter, Journal of Applied Physics, Physica B Condensed Matter and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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