F. B. Naranjo

2.1k total citations
94 papers, 1.8k citations indexed

About

F. B. Naranjo is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, F. B. Naranjo has authored 94 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Condensed Matter Physics, 44 papers in Atomic and Molecular Physics, and Optics and 38 papers in Electrical and Electronic Engineering. Recurrent topics in F. B. Naranjo's work include GaN-based semiconductor devices and materials (62 papers), Semiconductor Quantum Structures and Devices (31 papers) and ZnO doping and properties (26 papers). F. B. Naranjo is often cited by papers focused on GaN-based semiconductor devices and materials (62 papers), Semiconductor Quantum Structures and Devices (31 papers) and ZnO doping and properties (26 papers). F. B. Naranjo collaborates with scholars based in Spain, France and Germany. F. B. Naranjo's co-authors include E. Calleja, S. Fernández, M. A. Sánchez-Garcı́a, F. Calle, E. Muñoz, F.J. Sánchez, E. Monroy, S. Valdueza‐Felip, Miguel González‐Herráez and U. Jahn and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

F. B. Naranjo

93 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. B. Naranjo Spain 21 1.2k 839 706 676 483 94 1.8k
Fabrice Oehler France 25 755 0.6× 900 1.1× 895 1.3× 444 0.7× 895 1.9× 99 1.9k
Xuelin Yang China 26 1.6k 1.4× 847 1.0× 1.1k 1.6× 991 1.5× 431 0.9× 174 2.3k
Atsushi Yamaguchi Japan 18 1.6k 1.4× 801 1.0× 729 1.0× 715 1.1× 313 0.6× 82 2.0k
Suresh Sundaram United States 21 779 0.7× 751 0.9× 522 0.7× 395 0.6× 272 0.6× 79 1.4k
Benjamin Leung United States 21 933 0.8× 682 0.8× 469 0.7× 598 0.9× 369 0.8× 40 1.3k
Naoteru Shigekawa Japan 23 698 0.6× 596 0.7× 1.5k 2.2× 305 0.5× 459 1.0× 189 2.0k
Ricky W. Chuang Taiwan 21 754 0.6× 633 0.8× 762 1.1× 417 0.6× 229 0.5× 117 1.4k
V. Kumar United States 23 1.6k 1.3× 351 0.4× 1.3k 1.9× 598 0.9× 307 0.6× 66 1.9k
A. E. Belyaev Ukraine 21 763 0.6× 378 0.5× 757 1.1× 312 0.5× 266 0.6× 182 1.5k

Countries citing papers authored by F. B. Naranjo

Since Specialization
Citations

This map shows the geographic impact of F. B. Naranjo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. B. Naranjo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. B. Naranjo more than expected).

Fields of papers citing papers by F. B. Naranjo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. B. Naranjo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. B. Naranjo. The network helps show where F. B. Naranjo may publish in the future.

Co-authorship network of co-authors of F. B. Naranjo

This figure shows the co-authorship network connecting the top 25 collaborators of F. B. Naranjo. A scholar is included among the top collaborators of F. B. Naranjo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. B. Naranjo. F. B. Naranjo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Valdueza‐Felip, S., et al.. (2024). Effect of temperature and excitation power on down-conversion process in Tb3+/Yb3+-activated silica-hafnia glass-ceramic films. Ceramics International. 51(12). 16786–16790. 2 indexed citations
2.
Naranjo, F. B., et al.. (2021). Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications. Materials. 14(9). 2236–2236. 1 indexed citations
3.
Naranjo, F. B., et al.. (2020). Design of AlInN on silicon heterojunctions grown by sputtering for solar devices. Current Applied Physics. 20(11). 1244–1252. 10 indexed citations
4.
Valdueza‐Felip, S., et al.. (2019). High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering. Materials Science in Semiconductor Processing. 100. 8–14. 8 indexed citations
5.
Ruterana, P., et al.. (2019). Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 155µm. Optical Materials Express. 9(7). 2785–2785. 2 indexed citations
6.
Valdueza‐Felip, S., Marı́a de la Mata, Sergio I. Molina, et al.. (2018). Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering. Journal of Alloys and Compounds. 769. 824–830. 16 indexed citations
7.
Monroy, E., et al.. (2017). Widely power-tunable polarization-independent ultrafast mode-locked fiber laser using bulk InN as saturable absorber. Optics Express. 25(5). 5366–5366. 11 indexed citations
8.
9.
Valdueza‐Felip, S., et al.. (2015). Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer. Journal of Crystal Growth. 434. 13–18. 14 indexed citations
10.
Valdueza‐Felip, S., et al.. (2012). Nonlinear Absorption at Optical Telecommunication Wavelengths of InN Films Deposited by RF Sputtering. IEEE Photonics Technology Letters. 24(22). 1998–2000. 4 indexed citations
11.
Naranjo, F. B., P. Kandaswamy, S. Valdueza‐Felip, et al.. (2009). Novel InN/InGaN multiple quantum well structures for slow‐light generation at telecommunication wavelengths. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(1). 100–103. 1 indexed citations
12.
Valdueza‐Felip, S., F. B. Naranjo, Miguel González‐Herráez, et al.. (2008). Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $\mu$m. IEEE Photonics Technology Letters. 20(16). 1366–1368. 13 indexed citations
13.
Rivera, C., J. L. Pau, F. B. Naranjo, & E. Muñoz. (2004). Novel photodetectors based on InGaN/GaN multiple quantum wells. physica status solidi (a). 201(12). 2658–2662. 12 indexed citations
14.
Fernández-Torrente, I., Robert Martin, K.P. O’Donnell, et al.. (2003). Anomalous Composition Dependence of Optical Energies of MBE-grown InGaN. MRS Proceedings. 798. 2 indexed citations
15.
Naranjo, F. B., et al.. (2002). High-Quality Distributed Bragg Reflectors for Resonant-Cavity Light-Emitting Diode Applications. physica status solidi (a). 192(2). 389–393. 7 indexed citations
16.
Naranjo, F. B., S. Fernández, M. A. Sánchez-Garcı́a, et al.. (2002). Structural and optical characterization of thick InGaN layers and InGaN/GaN MQW grown by molecular beam epitaxy. Materials Science and Engineering B. 93(1-3). 131–134. 23 indexed citations
17.
Fernández, S., F. B. Naranjo, F. Calle, et al.. (2001). MBE-grown high-quality (Al,Ga)N/GaN distributed Bragg reflectors for resonant cavity LEDs. Semiconductor Science and Technology. 16(11). 913–917. 16 indexed citations
18.
Calle, F., M. Varela, C. Ballesteros, et al.. (2000). Wet etching of GaN grown by molecular beam epitaxy on Si(111). Semiconductor Science and Technology. 15(10). 996–1000. 60 indexed citations
19.
Pau, J. L., E. Monroy, F. B. Naranjo, et al.. (2000). High visible rejection AlGaN photodetectors on Si(111) substrates. Applied Physics Letters. 76(19). 2785–2787. 36 indexed citations
20.
Calleja, E., M. A. Sánchez-Garcı́a, F.J. Sánchez, et al.. (1999). Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties. Journal of Crystal Growth. 201-202. 296–317. 168 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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