D. Seghier

577 total citations
50 papers, 470 citations indexed

About

D. Seghier is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, D. Seghier has authored 50 papers receiving a total of 470 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 18 papers in Condensed Matter Physics. Recurrent topics in D. Seghier's work include Semiconductor materials and devices (26 papers), Semiconductor Quantum Structures and Devices (18 papers) and GaN-based semiconductor devices and materials (18 papers). D. Seghier is often cited by papers focused on Semiconductor materials and devices (26 papers), Semiconductor Quantum Structures and Devices (18 papers) and GaN-based semiconductor devices and materials (18 papers). D. Seghier collaborates with scholars based in Iceland, France and United Kingdom. D. Seghier's co-authors include H. P. Gíslason, S. Hautakangas, K. Saarinen, L. Liszkay, M. Alatalo, J. Oila, G. Guillot, T. Benyattou, R. Moncorgé and M. N. Charasse and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

D. Seghier

47 papers receiving 456 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Seghier Iceland 11 270 203 196 142 136 50 470
N. Teofilov Germany 10 200 0.7× 385 1.9× 119 0.6× 94 0.7× 179 1.3× 23 510
B. J. Isherwood United Kingdom 10 86 0.3× 115 0.6× 120 0.6× 89 0.6× 94 0.7× 27 286
F. Sinclair United States 11 218 0.8× 125 0.6× 47 0.2× 61 0.4× 92 0.7× 30 373
G.W.R. Endres Germany 7 80 0.3× 213 1.0× 297 1.5× 144 1.0× 95 0.7× 25 428
M. Mertin Germany 9 134 0.5× 137 0.7× 55 0.3× 99 0.7× 39 0.3× 15 386
Yu‐Miin Sheu Taiwan 13 266 1.0× 283 1.4× 56 0.3× 146 1.0× 166 1.2× 40 577
Vladimir A. Stoica United States 12 228 0.8× 352 1.7× 64 0.3× 159 1.1× 146 1.1× 32 547
R. Haakenaasen Norway 11 311 1.2× 411 2.0× 53 0.3× 149 1.0× 178 1.3× 38 573
M. E. Klausmeier-Brown United States 14 316 1.2× 131 0.6× 228 1.2× 253 1.8× 99 0.7× 32 575
R. G. Ulbrich Germany 16 352 1.3× 209 1.0× 97 0.5× 540 3.8× 66 0.5× 37 714

Countries citing papers authored by D. Seghier

Since Specialization
Citations

This map shows the geographic impact of D. Seghier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Seghier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Seghier more than expected).

Fields of papers citing papers by D. Seghier

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Seghier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Seghier. The network helps show where D. Seghier may publish in the future.

Co-authorship network of co-authors of D. Seghier

This figure shows the co-authorship network connecting the top 25 collaborators of D. Seghier. A scholar is included among the top collaborators of D. Seghier based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Seghier. D. Seghier is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sattar, Tariq, et al.. (2018). Towards safe inspection of long weld lines on ship hulls using an autonomous robot. Research Open (London South Bank University). 5 indexed citations
2.
Park, Daesung, Haiyuan Wang, Marc Walker, et al.. (2016). Surface passivation of semiconducting oxides by self-assembled nanoparticles. Scientific Reports. 6(1). 18449–18449. 12 indexed citations
3.
Park, Daesung, James J. Mudd, Marc Walker, et al.. (2014). Pinning effect on the band gap modulation of crystalline BexZn1−xO alloy films grown on Al2O3(0001). CrystEngComm. 16(11). 2136–2143. 5 indexed citations
4.
Seghier, D. & H. P. Gíslason. (2009). On the oxygen vacancy in Co-doped ZnO thin films. Physica B Condensed Matter. 404(23-24). 4800–4802. 11 indexed citations
5.
Seghier, D. & H. P. Gíslason. (2009). Characterization of photoconductivity in AlxGa1−xN materials. Journal of Physics D Applied Physics. 42(9). 95103–95103. 10 indexed citations
6.
Seghier, D. & H. P. Gíslason. (2008). Opto-electrical characterization of electrically active point defects in AlxGa1−xN. Journal of Physics D Applied Physics. 41(9). 95109–95109. 2 indexed citations
7.
Seghier, D. & H. P. Gíslason. (2007). Characterization of donor states in ZnO. Physica B Condensed Matter. 401-402. 404–407. 9 indexed citations
8.
Seghier, D. & H. P. Gíslason. (2007). Shallow and deep donors in n-type ZnO characterized by admittance spectroscopy. Journal of Materials Science Materials in Electronics. 19(8-9). 687–691. 15 indexed citations
9.
Seghier, D. & H. P. Gíslason. (2006). Dx-like defects in AlGaN/GaN structures by means of noise spectroscopy. Materials Science in Semiconductor Processing. 9(1-3). 41–44. 2 indexed citations
10.
Hautakangas, S., V. Ranki, Ilja Makkonen, et al.. (2006). Gallium and nitrogen vacancies in GaN: Impurity decoration effects. Physica B Condensed Matter. 376-377. 424–427. 19 indexed citations
11.
Hautakangas, S., J. Oila, M. Alatalo, et al.. (2003). Vacancy Defects as Compensating Centers in Mg-Doped GaN. Physical Review Letters. 90(13). 25–137402. 113 indexed citations
12.
Seghier, D., H. P. Gíslason, C. Morhain, et al.. (2002). Self-Compensation of the Phosphorus Acceptor in ZnSe. physica status solidi (b). 229(1). 251–255. 1 indexed citations
13.
Yang, Benhui, D. Seghier, & H. P. Gíslason. (2002). Compensation mechanism and transport behaviour of semi-insulating GaAs:Cu. 143 147. 163–166. 2 indexed citations
14.
Seghier, D. & H. P. Gíslason. (2002). Dependence of the Au/AlGaN Schottky Characteristics on Al Content. Physica Scripta. T101(1). 230–230. 6 indexed citations
15.
Seghier, D., Jón Tómas Guðmundsson, & H. P. Gíslason. (2000). Direct observation of hydrogen passivation of nitrogen-related energy levels in ZnSe and ZnSxSe1−x grown by MBE. Journal of Crystal Growth. 214-215. 478–481. 1 indexed citations
16.
Seghier, D. & H. P. Gíslason. (1999). The role of deep levels in the persistent photoconductivity in Mg-doped GaN grown by MOCVD. Physica B Condensed Matter. 273-274. 63–65. 2 indexed citations
17.
Hauksson, I., et al.. (1998). DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe. Journal of Crystal Growth. 184-185. 490–494. 2 indexed citations
18.
Seghier, D.. (1996). Photo-induced current spectroscopy study on semi-insulating LEC GaAs. Journal of Physics D Applied Physics. 29(4). 1071–1073. 2 indexed citations
19.
Benyattou, T., D. Seghier, G. Brémond, et al.. (1993). Electrical and Optical Properties of Yb, Er doped GaAs. MRS Proceedings. 301. 1 indexed citations
20.
Seghier, D., T. Benyattou, G. Brémond, et al.. (1992). Electrical behavior of Yb ion in p- and n-type InP. Applied Physics Letters. 60(8). 983–985. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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