M. Rudziński

747 total citations
37 papers, 619 citations indexed

About

M. Rudziński is a scholar working on Condensed Matter Physics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, M. Rudziński has authored 37 papers receiving a total of 619 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Condensed Matter Physics, 18 papers in Materials Chemistry and 14 papers in Electrical and Electronic Engineering. Recurrent topics in M. Rudziński's work include GaN-based semiconductor devices and materials (35 papers), ZnO doping and properties (16 papers) and Metal and Thin Film Mechanics (12 papers). M. Rudziński is often cited by papers focused on GaN-based semiconductor devices and materials (35 papers), ZnO doping and properties (16 papers) and Metal and Thin Film Mechanics (12 papers). M. Rudziński collaborates with scholars based in Poland, Sweden and Russia. M. Rudziński's co-authors include Marcin Zając, R. Kudrawiec, R. Dwiliński, R. Doradziński, Robert Kucharski, J. Garczyński, L. Sierzputowski, J. Serafińczuk, J. Misiewicz and Włodek Strupiński and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Chemical Communications.

In The Last Decade

M. Rudziński

36 papers receiving 595 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Rudziński Poland 14 522 265 248 241 155 37 619
J.C. de Jaeger France 13 437 0.8× 176 0.7× 203 0.8× 424 1.8× 55 0.4× 39 630
Serguei Chevtchenko Germany 15 414 0.8× 269 1.0× 199 0.8× 568 2.4× 41 0.3× 72 810
H.-H. Wehmann Germany 15 333 0.6× 302 1.1× 241 1.0× 226 0.9× 43 0.3× 33 568
Jintong Xu China 13 241 0.5× 138 0.5× 169 0.7× 248 1.0× 31 0.2× 44 468
A. Sohmer Germany 11 733 1.4× 282 1.1× 319 1.3× 182 0.8× 186 1.2× 21 815
Karine Hestroffer United States 19 716 1.4× 443 1.7× 366 1.5× 447 1.9× 110 0.7× 40 1.0k
Hyun Kyong Cho Germany 17 598 1.1× 265 1.0× 295 1.2× 239 1.0× 64 0.4× 40 672
Y. S. Gou Taiwan 15 374 0.7× 276 1.0× 257 1.0× 180 0.7× 21 0.1× 94 637
Satoru Nagao Japan 10 623 1.2× 348 1.3× 364 1.5× 340 1.4× 101 0.7× 21 786
Koji Uematsu Japan 5 506 1.0× 238 0.9× 274 1.1× 214 0.9× 103 0.7× 5 547

Countries citing papers authored by M. Rudziński

Since Specialization
Citations

This map shows the geographic impact of M. Rudziński's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Rudziński with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Rudziński more than expected).

Fields of papers citing papers by M. Rudziński

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Rudziński. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Rudziński. The network helps show where M. Rudziński may publish in the future.

Co-authorship network of co-authors of M. Rudziński

This figure shows the co-authorship network connecting the top 25 collaborators of M. Rudziński. A scholar is included among the top collaborators of M. Rudziński based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Rudziński. M. Rudziński is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Złotnik, Sebastian, P. Ciepielewski, Paweł Piotr Michałowski, et al.. (2022). Insights on boron impact on structural characteristics in epitaxially grown BGaN. Journal of Materials Science. 57(14). 7265–7275. 5 indexed citations
2.
Rudziński, M., Paweł Piotr Michałowski, Sebastian Złotnik, et al.. (2022). Thermal oxidation of [0001] GaN in water vapor compared with dry and wet oxidation: Oxide properties and impact on GaN. Applied Surface Science. 598. 153872–153872. 6 indexed citations
3.
Złotnik, Sebastian, et al.. (2020). Phosphorus implantation of Mg-doped (Al)GaN heterostructures: structural examination and depth profiling. Journal of Materials Science Materials in Electronics. 31(20). 17892–17902. 1 indexed citations
4.
Krause, Sascha, Denis Meledin, N. Kaurova, et al.. (2019). Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer. Superconductor Science and Technology. 32(7). 75003–75003. 2 indexed citations
5.
6.
Lemettinen, Jori, Hironori Okumura, M. Rudziński, et al.. (2018). MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC. Journal of Crystal Growth. 487. 50–56. 35 indexed citations
7.
Krause, Sascha, Vincent Desmaris, Denis Meledin, et al.. (2016). Ambient Temperature Growth of Mono- and Polycrystalline NbN Nanofilms and Their Surface and Composition Analysis. IEEE Transactions on Applied Superconductivity. 26(3). 1–5. 10 indexed citations
8.
Rudziński, M., et al.. (2014). Niebieskie, zielone i białe emitery światła wytwarzane z półprzewodników AIII-BN. PRZEGLĄD ELEKTROTECHNICZNY. 1 indexed citations
9.
Caban, P., et al.. (2014). Growth of aluminium nitride with linear change of ammonia flow. Journal of Crystal Growth. 414. 81–86. 8 indexed citations
10.
Rudziński, M., R. Kudrawiec, Robert Kucharski, R. Dwiliński, & Włodek Strupiński. (2013). Properties of MOCVD GaN/AlGaN heterostructures grown on polar and non‐polar bulk GaN substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(3). 302–305. 1 indexed citations
11.
Rudziński, M., R. Kudrawiec, J. Serafińczuk, et al.. (2011). Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method. Journal of Crystal Growth. 328(1). 5–12. 14 indexed citations
12.
Kudrawiec, R., M. Motyka, Robert Kucharski, et al.. (2011). Transparency of GaN substrates in the mid‐infrared spectral range. Crystal Research and Technology. 47(3). 347–350. 15 indexed citations
13.
Kudrawiec, R., M. Rudziński, M. Gładysiewicz, et al.. (2011). Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method. Journal of Applied Physics. 109(6). 7 indexed citations
14.
Kudrawiec, R., M. Rudziński, Robert Kucharski, et al.. (2010). Optical and structural properties of m ‐plane GaN substrates grown by ammonothermal method and GaN epilayers grown on these substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(10). 2359–2364. 7 indexed citations
15.
Dwiliński, R., R. Doradziński, J. Garczyński, et al.. (2010). Ammonothermal growth of GaN substrates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7602. 76020C–76020C. 1 indexed citations
16.
Dwiliński, R., R. Doradziński, J. Garczyński, et al.. (2010). Recent achievements in AMMONO-bulk method. Journal of Crystal Growth. 312(18). 2499–2502. 75 indexed citations
17.
Kudrawiec, R., Robert Kucharski, M. Rudziński, et al.. (2010). Application of contactless electroreflectance to study the epi readiness of m-plane GaN substrates obtained by ammonothermal method. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 28(6). L18–L21. 8 indexed citations
18.
Dwiliński, R., R. Doradziński, J. Garczyński, et al.. (2009). Properties of truly bulk GaN monocrystals grown by ammonothermal method. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(12). 2661–2664. 12 indexed citations
19.
Rudziński, M., E. Jezierska, J.L. Weyher, et al.. (2007). Defect formation in GaN grown on vicinal 4H‐SiC (0001) substrates. physica status solidi (a). 204(12). 4230–4240. 18 indexed citations
20.
Ochalski, Tomasz J., M. Rudziński, P.K. Larsen, et al.. (2005). Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC. physica status solidi (a). 202(7). 1300–1307. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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