E.B. Kaminsky

584 total citations
18 papers, 390 citations indexed

About

E.B. Kaminsky is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, E.B. Kaminsky has authored 18 papers receiving a total of 390 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 13 papers in Condensed Matter Physics and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in E.B. Kaminsky's work include GaN-based semiconductor devices and materials (13 papers), Semiconductor materials and devices (9 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). E.B. Kaminsky is often cited by papers focused on GaN-based semiconductor devices and materials (13 papers), Semiconductor materials and devices (9 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). E.B. Kaminsky collaborates with scholars based in United States, Israel and Canada. E.B. Kaminsky's co-authors include L.B. Rowland, A. Vertiatchikh, Julie Teetsov, L.F. Eastman, V. Tilak, Hai Lu, J. Kretchmer, Kevin Robinson, Jesse B. Tucker and P. Perlin and has published in prestigious journals such as Journal of The Electrochemical Society, IEEE Transactions on Electron Devices and Journal of Crystal Growth.

In The Last Decade

E.B. Kaminsky

17 papers receiving 368 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E.B. Kaminsky United States	10	309	271	112	95	89	18	390
Jinyu Ni China	11	395 1.3×	310 1.1×	230 2.1×	131 1.4×	57 0.6×	32	458
Ming Tao China	10	258 0.8×	242 0.9×	141 1.3×	80 0.8×	69 0.8×	18	328
B. Peres United States	12	347 1.1×	282 1.0×	209 1.9×	100 1.1×	51 0.6×	21	401
Hongling Xiao China	10	324 1.0×	187 0.7×	182 1.6×	123 1.3×	63 0.7×	45	378
C. Harris Sweden	10	70 0.2×	271 1.0×	52 0.5×	93 1.0×	46 0.5×	12	325
Lorenzo Lugani Switzerland	13	268 0.9×	274 1.0×	140 1.3×	101 1.1×	136 1.5×	21	404
Omair I. Saadat United States	10	453 1.5×	423 1.6×	230 2.1×	128 1.3×	76 0.9×	17	545
Osamu Ishiguro Japan	9	479 1.6×	407 1.5×	232 2.1×	93 1.0×	83 0.9×	12	513
Chang Min Jeon South Korea	11	364 1.2×	257 0.9×	193 1.7×	134 1.4×	131 1.5×	24	439
E. B. Stokes United States	7	291 0.9×	194 0.7×	87 0.8×	157 1.7×	170 1.9×	30	375

Countries citing papers authored by E.B. Kaminsky

Since Specialization

Citations

This map shows the geographic impact of E.B. Kaminsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E.B. Kaminsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E.B. Kaminsky more than expected).

Fields of papers citing papers by E.B. Kaminsky

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E.B. Kaminsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E.B. Kaminsky. The network helps show where E.B. Kaminsky may publish in the future.

Co-authorship network of co-authors of E.B. Kaminsky

This figure shows the co-authorship network connecting the top 25 collaborators of E.B. Kaminsky. A scholar is included among the top collaborators of E.B. Kaminsky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E.B. Kaminsky. E.B. Kaminsky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

D’Evelyn, Mark P., Hai Lu, E.B. Kaminsky, et al.. (2007). Bulk GaN crystal growth by the high-pressure ammonothermal method. Journal of Crystal Growth. 300(1). 11–16. 57 indexed citations

Cao, X. A., Hai Lu, E.B. Kaminsky, et al.. (2007). Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodes. Journal of Crystal Growth. 300(2). 382–386. 10 indexed citations

Grandusky, James, V. K. Jindal, Neeraj Tripathi, et al.. (2007). Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers. Journal of Crystal Growth. 307(2). 309–314. 16 indexed citations

Vertiatchikh, A., E.B. Kaminsky, Julie Teetsov, & Kevin Robinson. (2006). Structural properties of alloyed Ti/Al/Ti/Au and Ti/Al/Mo/Au ohmic contacts to AlGaN/GaN. Solid-State Electronics. 50(7-8). 1425–1429. 32 indexed citations

Lu, Hai, et al.. (2006). Cathodoluminescence mapping and selective etching of defects in bulk GaN. Journal of Crystal Growth. 291(1). 82–85. 26 indexed citations

Matocha, Kevin, Jesse B. Tucker, & E.B. Kaminsky. (2005). Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis. Materials science forum. 483-485. 589–592. 1 indexed citations

Rowland, L.B., et al.. (2004). Self-heating effects in AlGaN/GaN high-power HEMTs. 39. 15–16. 3 indexed citations

Kaminsky, E.B., et al.. (2004). Stability of AlGaN/GaN high-power HEMTs under DC and RF stresses. Electronics Letters. 40(19). 1229–1230. 7 indexed citations

Rowland, L.B., et al.. (2003). 9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias. Electronics Letters. 39(2). 245–247. 24 indexed citations

10.

Rowland, L.B., E.B. Kaminsky, V. Tilak, et al.. (2003). Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors. Journal of Electronic Materials. 32(5). 388–394. 131 indexed citations

11.

Rowland, L.B., E.B. Kaminsky, J. Kretchmer, et al.. (2003). Microwave power SiC MESFETs and GaN HEMTs. Solid-State Electronics. 47(5). 821–826. 35 indexed citations

12.

Rowland, L.B., et al.. (2003). Performance of AlGaN/GaN HEMTs for 2.8 GHz and 10 GHz power amplifier applications. 1. 251–254. 8 indexed citations

13.

Rowland, L.B., E.B. Kaminsky, Jesse B. Tucker, et al.. (2003). Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance. Journal of Electronic Materials. 32(5). 437–443. 7 indexed citations

14.

Rowland, L.B., E.B. Kaminsky, J. Kretchmer, et al.. (2003). Microwave power SiC MESFETs and GaN HEMTs. 181–185. 5 indexed citations

15.

Ghezzo, M., E.B. Kaminsky, Y. Nissan‐Cohen, Peter Frank, & R. Saia. (1989). LOPOS: Advanced Device Isolation for a 0.8 μm CMOS/BULK Process Technology. Journal of The Electrochemical Society. 136(7). 1992–1996. 16 indexed citations

16.

Kwasnick, Robert, et al.. (1988). An investigation of a molybdenum gate for submicrometer CMOS. IEEE Transactions on Electron Devices. 35(9). 1432–1438. 9 indexed citations

17.

Kwasnick, Robert, E.B. Kaminsky, & Peter Frank. (1988). Buried-oxide isolation with etch-stop (BOXES). IEEE Electron Device Letters. 9(2). 62–64. 1 indexed citations

18.

Kwasnick, Robert, et al.. (1986). A Mo Gate Submicron MOS Process Using Optical Projection Lithography. Symposium on VLSI Technology. 11–12. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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