N. V. Vostokov

407 total citations
60 papers, 294 citations indexed

About

N. V. Vostokov is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, N. V. Vostokov has authored 60 papers receiving a total of 294 indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Atomic and Molecular Physics, and Optics, 35 papers in Electrical and Electronic Engineering and 21 papers in Materials Chemistry. Recurrent topics in N. V. Vostokov's work include Semiconductor Quantum Structures and Devices (29 papers), Semiconductor materials and interfaces (17 papers) and Silicon Nanostructures and Photoluminescence (14 papers). N. V. Vostokov is often cited by papers focused on Semiconductor Quantum Structures and Devices (29 papers), Semiconductor materials and interfaces (17 papers) and Silicon Nanostructures and Photoluminescence (14 papers). N. V. Vostokov collaborates with scholars based in Russia, France and Germany. N. V. Vostokov's co-authors include V. I. Shashkin, Yu. N. Drozdov, А. В. Новиков, Д. Н. Лобанов, Z. F. Krasil’nik, A. Yu. Klimov, Z. F. Krasilnik, Vladimir V. Rogov, М. Н. Дроздов and Artem N. Yablonskiy and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

N. V. Vostokov

54 papers receiving 290 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
N. V. Vostokov Russia	10	207	179	134	78	27	60	294
A. Piotrowska Poland	8	298 1.4×	303 1.7×	91 0.7×	39 0.5×	36 1.3×	24	387
N. P. Stepina Russia	11	300 1.4×	173 1.0×	254 1.9×	72 0.9×	33 1.2×	68	410
В. И. Зубков Russia	11	242 1.2×	218 1.2×	122 0.9×	58 0.7×	49 1.8×	72	339
V. B. Shuman Russia	11	119 0.6×	282 1.6×	218 1.6×	64 0.8×	20 0.7×	69	372
Hiroki Hamada Japan	11	192 0.9×	375 2.1×	141 1.1×	46 0.6×	32 1.2×	52	434
T. Wetteroth United States	7	71 0.3×	218 1.2×	89 0.7×	69 0.9×	39 1.4×	20	308
Nobuhiro Endo Japan	12	91 0.4×	336 1.9×	117 0.9×	86 1.1×	9 0.3×	36	381
Kotone Akiyama Japan	9	239 1.2×	123 0.7×	60 0.4×	109 1.4×	17 0.6×	18	310
J.H. Evans–Freeman United Kingdom	10	156 0.8×	274 1.5×	131 1.0×	50 0.6×	29 1.1×	54	336
I. P. Soshnikov Russia	9	200 1.0×	218 1.2×	106 0.8×	83 1.1×	44 1.6×	35	307

Countries citing papers authored by N. V. Vostokov

Since Specialization

Citations

This map shows the geographic impact of N. V. Vostokov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. V. Vostokov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. V. Vostokov more than expected).

Fields of papers citing papers by N. V. Vostokov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. V. Vostokov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. V. Vostokov. The network helps show where N. V. Vostokov may publish in the future.

Co-authorship network of co-authors of N. V. Vostokov

This figure shows the co-authorship network connecting the top 25 collaborators of N. V. Vostokov. A scholar is included among the top collaborators of N. V. Vostokov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. V. Vostokov. N. V. Vostokov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Vostokov, N. V., et al.. (2023). Microwave volt-impedance spectroscopy of semiconductor structure. Физика и техника полупроводников. 57(3). 169–169.

Волков, П. В., et al.. (2019). Detectors Based on Low-Barrier Mott Diodes and Their Characteristics in the 150–250 GHz Range. Technical Physics Letters. 45(3). 239–241. 1 indexed citations

Vostokov, N. V., et al.. (2018). Study of Electrophysical Characteristics of pHEMT Heterostructures by the Methods of Impedance Spectroscopy. IEEE Transactions on Electron Devices. 65(4). 1327–1332. 4 indexed citations

Vostokov, N. V., et al.. (2017). Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges. Technical Physics. 62(5). 765–772.

Vostokov, N. V. & V. I. Shashkin. (2016). Experimental Studies of the Frequency Dependence of the Low-Barrier Mott Diode Impedance. IEEE Transactions on Electron Devices. 64(1). 109–114. 6 indexed citations

Vostokov, N. V., et al.. (2010). Deposition of YBCO films on both sides of substrate by magnetron sputtering. Technical Physics Letters. 36(9). 859–861. 2 indexed citations

Shashkin, V. I. & N. V. Vostokov. (2008). Analytical solution for charge-carrier injection into an insulating layer in the drift diffusion approximation. Journal of Applied Physics. 104(12). 6 indexed citations

Дроздов, М. Н., et al.. (2008). Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer. Semiconductors. 42(3). 298–304. 1 indexed citations

Vostokov, N. V., Yu. N. Drozdov, Z. F. Krasilnik, et al.. (2006). Special features of the formation of Ge(Si) islands on the relaxed Si1−xGex/Si(001) buffer layers. Semiconductors. 40(2). 229–233. 4 indexed citations

10.

Vostokov, N. V.. (2005). Si[sub 1 – ][sub x]Ge[sub x] ∕Si(001) Relaxed Buffer Layers Grown by Chemical Vapor Deposition at Atmospheric Pressure. Physics of the Solid State. 47(1). 42–42. 6 indexed citations

11.

Vostokov, N. V. & V. I. Shashkin. (2004). Electrical properties of metal-semiconductor nanocontacts. Semiconductors. 38(9). 1047–1052. 6 indexed citations

12.

Новиков, А. В., et al.. (2004). Photoluminescence of GeSi/Si(001) self-assembled islands with dome and hut shape. Physica E Low-dimensional Systems and Nanostructures. 23(3-4). 416–420. 5 indexed citations

13.

Pakhomov, Georgy L., М. Н. Дроздов, & N. V. Vostokov. (2004). Plasma irradiation effects in phthalocyanine films. Applied Surface Science. 230(1-4). 241–248. 6 indexed citations

14.

Bredikhin, V. I., et al.. (2004). Interference nanolithography with a UV laser. Technical Physics. 49(9). 1191–1195. 2 indexed citations

15.

Vostokov, N. V., et al.. (2002). Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands. Journal of Experimental and Theoretical Physics Letters. 76(6). 365–369. 22 indexed citations

16.

Дроздов, М. Н., et al.. (2002). InGaAsN/GaAs QD and QW structures grown by MOVPE. Journal of Crystal Growth. 248. 343–347. 4 indexed citations

17.

Vostokov, N. V., Yu. N. Drozdov, Z. F. Krasil’nik, et al.. (2000). Transition from “dome” to “pyramid” shape of self-assembled GeSi islands. Journal of Crystal Growth. 209(2-3). 302–305. 9 indexed citations

18.

Vostokov, N. V., С. А. Гусев, Yu. N. Drozdov, et al.. (2000). Elastic strain and composition of self-assembled GeSi nanoislands on Si(001). Semiconductors. 34(1). 6–10. 2 indexed citations

19.

Krasil’nik, Z. F., Yu. N. Drozdov, Д. О. Филатов, et al.. (2000). The elastic strain and composition of self-assembled GeSi islands on Si(001). Thin Solid Films. 367(1-2). 171–175. 7 indexed citations

20.

Vorobiev, Andrei, Yu. N. Drozdov, С. А. Гусев, et al.. (1999). Study of correlation between the microstructure and phase inhomogeneities of Y-Ba-Cu-O epitaxial films and their DC and microwave properties. Superconductor Science and Technology. 12(11). 908–911. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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