I. V. Shtrom

820 total citations
63 papers, 614 citations indexed

About

I. V. Shtrom is a scholar working on Biomedical Engineering, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, I. V. Shtrom has authored 63 papers receiving a total of 614 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Biomedical Engineering, 38 papers in Electrical and Electronic Engineering and 36 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in I. V. Shtrom's work include Nanowire Synthesis and Applications (46 papers), Semiconductor Quantum Structures and Devices (28 papers) and GaN-based semiconductor devices and materials (20 papers). I. V. Shtrom is often cited by papers focused on Nanowire Synthesis and Applications (46 papers), Semiconductor Quantum Structures and Devices (28 papers) and GaN-based semiconductor devices and materials (20 papers). I. V. Shtrom collaborates with scholars based in Russia, France and Germany. I. V. Shtrom's co-authors include G. É. Cirlin, A. D. Bouravleuv, R. R. Reznik, Maria Timofeeva, Rachel Grange, А. И. Хребтов, Claude Renaut, Flavia Timpu, N. Akopian and Lukas Lang and has published in prestigious journals such as SHILAP Revista de lepidopterología, Nano Letters and Journal of Applied Physics.

In The Last Decade

I. V. Shtrom

58 papers receiving 602 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
I. V. Shtrom Russia 15 420 355 330 198 131 63 614
Wai Son Ko United States 11 538 1.3× 496 1.4× 582 1.8× 219 1.1× 85 0.6× 21 793
Thai-Truong D. Tran United States 13 613 1.5× 544 1.5× 650 2.0× 235 1.2× 91 0.7× 20 865
Callum J. Docherty United Kingdom 7 459 1.1× 371 1.0× 592 1.8× 391 2.0× 38 0.3× 7 848
Ashish Chanana United States 15 138 0.3× 216 0.6× 448 1.4× 254 1.3× 50 0.4× 31 628
N. A. Savostianova Germany 9 243 0.6× 304 0.9× 247 0.7× 70 0.4× 35 0.3× 11 498
Kihyun Choi Japan 11 259 0.6× 400 1.1× 270 0.8× 247 1.2× 421 3.2× 29 715
Tolga Kartaloğlu Türkiye 13 140 0.3× 252 0.7× 275 0.8× 130 0.7× 189 1.4× 30 509
Yaser Hajati Iran 14 273 0.7× 251 0.7× 224 0.7× 250 1.3× 32 0.2× 48 566
Federica Bianco Italy 12 188 0.4× 375 1.1× 379 1.1× 245 1.2× 20 0.2× 33 655
N. T. Cherpak Ukraine 13 298 0.7× 244 0.7× 361 1.1× 62 0.3× 185 1.4× 105 557

Countries citing papers authored by I. V. Shtrom

Since Specialization
Citations

This map shows the geographic impact of I. V. Shtrom's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. V. Shtrom with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. V. Shtrom more than expected).

Fields of papers citing papers by I. V. Shtrom

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. V. Shtrom. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. V. Shtrom. The network helps show where I. V. Shtrom may publish in the future.

Co-authorship network of co-authors of I. V. Shtrom

This figure shows the co-authorship network connecting the top 25 collaborators of I. V. Shtrom. A scholar is included among the top collaborators of I. V. Shtrom based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. V. Shtrom. I. V. Shtrom is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Soshnikov, I. P., et al.. (2024). On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 18(2). 408–412. 1 indexed citations
2.
Shtrom, I. V., N. V. Sibirev, І. П. Сошніков, et al.. (2024). Lead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy. Nanomaterials. 14(23). 1860–1860.
3.
Koval, Olga Yu., Dmitry I. Yakubovsky, А. В. Нащекин, et al.. (2022). Deep-Level Emission Tailoring in ZnO Nanostructures Grown via Hydrothermal Synthesis. Nanomaterials. 13(1). 58–58. 12 indexed citations
4.
Sibirev, N. V., Yury Berdnikov, Vladimir V. Fedorov, I. V. Shtrom, & Alexey D. Bolshakov. (2022). Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires. Semiconductors. 56(1). 14–17. 1 indexed citations
5.
Reznik, R. R., K. P. Kotlyar, I. V. Shtrom, et al.. (2021). Different III-V semiconductor nanowires with quantum dots on silicon: growth by molecular-beam epitaxy and properties. SHILAP Revista de lepidopterología. 21(6). 866–871. 1 indexed citations
6.
Koval, Olga Yu., Vladimir V. Fedorov, Alexey D. Bolshakov, et al.. (2020). Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane. Nanomaterials. 10(11). 2110–2110. 19 indexed citations
7.
Petrov, Mihail, Kristina Frizyuk, Claude Renaut, et al.. (2020). Engineering of the Second‐Harmonic Emission Directionality with III–V Semiconductor Rod Nanoantennas. Laser & Photonics Review. 14(9). 15 indexed citations
8.
Gardonio, Sandra, Mattia Fanetti, F. Martelli, et al.. (2020). Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs. The Journal of Physical Chemistry C. 124(32). 17783–17794. 2 indexed citations
9.
Reznik, R. R., Matthew Reynolds, Е. В. Убыйвовк, et al.. (2020). Wurtzite AlGaAs Nanowires. Scientific Reports. 10(1). 735–735. 15 indexed citations
10.
Дубровский, В. Г., et al.. (2020). Free Energy of Nucleus Formation during Growth of III–V Semiconductor Nanowires. Technical Physics Letters. 46(9). 889–892.
11.
Koval, Olga Yu., Vladimir V. Fedorov, N. V. Kryzhanovskaya, et al.. (2019). Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon. CrystEngComm. 22(2). 283–292. 8 indexed citations
12.
Sibirev, N. V., Hui Huang, Е. В. Убыйвовк, et al.. (2019). Growth of GaN Nanotubes and Nanowires on Au–Ni Catalysts. Technical Physics Letters. 45(2). 159–162. 1 indexed citations
13.
Bolshakov, Alexey D., Vladimir V. Fedorov, А М Можаров, et al.. (2019). Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si. Nanotechnology. 30(39). 395602–395602. 29 indexed citations
14.
15.
Bolshakov, Alexey D., А М Можаров, I. V. Shtrom, et al.. (2018). Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy. Beilstein Journal of Nanotechnology. 9. 146–154. 27 indexed citations
16.
Fedorov, Vladimir V., Alexey D. Bolshakov, А М Можаров, et al.. (2017). Effect of Ga seeding layer on formation of epitaxial Y-shaped GaN nanoparticles on silicon. Journal of Physics Conference Series. 917. 32040–32040. 1 indexed citations
17.
Cirlin, G. É., R. R. Reznik, I. V. Shtrom, et al.. (2017). AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates. Journal of Physics D Applied Physics. 50(48). 484003–484003. 21 indexed citations
18.
Bouravleuv, A. D., R. R. Reznik, I. V. Shtrom, et al.. (2017). MBE growth of nanowires using colloidal Ag nanoparticles. Journal of Physics Conference Series. 864. 12010–12010. 2 indexed citations
19.
Shtrom, I. V., A. D. Bouravleuv, Yu. B. Samsonenko, et al.. (2016). Surface passivation of GaAs nanowires by the atomic layer deposition of AlN. Semiconductors. 50(12). 1619–1621. 1 indexed citations
20.
Soshnikov, I. P., Andriy Semenov, I. V. Shtrom, et al.. (2016). Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition. Physics of the Solid State. 58(12). 2401–2405. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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