В. Н. Бессолов

947 total citations
71 papers, 764 citations indexed

About

В. Н. Бессолов is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, В. Н. Бессолов has authored 71 papers receiving a total of 764 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Condensed Matter Physics, 37 papers in Electrical and Electronic Engineering and 36 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in В. Н. Бессолов's work include GaN-based semiconductor devices and materials (47 papers), Semiconductor Quantum Structures and Devices (33 papers) and Ga2O3 and related materials (15 papers). В. Н. Бессолов is often cited by papers focused on GaN-based semiconductor devices and materials (47 papers), Semiconductor Quantum Structures and Devices (33 papers) and Ga2O3 and related materials (15 papers). В. Н. Бессолов collaborates with scholars based in Russia, Germany and Finland. В. Н. Бессолов's co-authors include М. В. Лебедев, E. V. Konenkova, Dietrich R. T. Zahn, С. А. Кукушкін, А. В. Осипов, S. N. Rodin, M. P. Shcheglov, M. Friedrich, V. L. Berkovits and V. I. Safarov and has published in prestigious journals such as Journal of Applied Physics, Applied Surface Science and Thin Solid Films.

In The Last Decade

В. Н. Бессолов

61 papers receiving 721 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
В. Н. Бессолов Russia	14	531	421	246	220	208	71	764
Masaaki Yuri Japan	17	485 0.9×	472 1.1×	520 2.1×	246 1.1×	131 0.6×	66	851
Kensuke Akiyama Japan	18	400 0.8×	403 1.0×	144 0.6×	368 1.7×	112 0.5×	97	787
Ines Pietzonka Germany	14	419 0.8×	433 1.0×	395 1.6×	199 0.9×	128 0.6×	56	726
T.J. Bullough United Kingdom	16	399 0.8×	405 1.0×	180 0.7×	234 1.1×	97 0.5×	66	677
J. C. Tramontana United States	12	449 0.8×	382 0.9×	160 0.7×	384 1.7×	158 0.8×	26	777
F. Genty France	17	647 1.2×	400 1.0×	122 0.5×	191 0.9×	72 0.3×	62	796
A. Ruiz Spain	14	383 0.7×	464 1.1×	90 0.4×	224 1.0×	95 0.5×	47	610
A. Rocher France	17	532 1.0×	603 1.4×	152 0.6×	302 1.4×	126 0.6×	74	917
G.P. Srivastava United Kingdom	17	298 0.6×	544 1.3×	196 0.8×	315 1.4×	99 0.5×	70	748
R. N. Kyutt Russia	13	337 0.6×	280 0.7×	276 1.1×	412 1.9×	107 0.5×	95	738

Countries citing papers authored by В. Н. Бессолов

Since Specialization

Citations

This map shows the geographic impact of В. Н. Бессолов's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by В. Н. Бессолов with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites В. Н. Бессолов more than expected).

Fields of papers citing papers by В. Н. Бессолов

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by В. Н. Бессолов. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by В. Н. Бессолов. The network helps show where В. Н. Бессолов may publish in the future.

Co-authorship network of co-authors of В. Н. Бессолов

This figure shows the co-authorship network connecting the top 25 collaborators of В. Н. Бессолов. A scholar is included among the top collaborators of В. Н. Бессолов based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with В. Н. Бессолов. В. Н. Бессолов is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Бессолов, В. Н., E. V. Konenkova, & S. N. Rodin. (2023). Initial stages of growth of the GaN(11\=22) layer on a nano-structured Si(113) substrate. Физика и техника полупроводников. 57(1). 3–3. 1 indexed citations

Бессолов, В. Н. & E. V. Konenkova. (2023). Полуполярные широкозонные III-N-слои на кремниевой подложке: эпитаксия с контролем свойств структур (обзор). Журнал технической физики. 93(9). 1235–1235.

Бессолов, В. Н., M. E. Kompan, E. V. Konenkova, & S. N. Rodin. (2022). Deformation of Semipolar and Polar Gallium Nitride Synthesized on a Silicon Substrate. Bulletin of the Russian Academy of Sciences Physics. 86(7). 817–819. 1 indexed citations

Бессолов, В. Н., et al.. (2021). Formation of Semipolar Group-III-Nitride Layers on Textured Si(100) Substrates with Self-Forming Nanomask. Semiconductors. 55(4). 395–398. 3 indexed citations

Бессолов, В. Н., M. E. Kompan, E. V. Konenkova, et al.. (2019). Эпитаксия слоев GaN(0001) или GaN(1011) на подложке Si(100). Письма в журнал технической физики. 45(11). 3–3. 2 indexed citations

Бессолов, В. Н., M. E. Kompan, E. V. Konenkova, et al.. (2019). Epitaxy of GaN(0001) and GaN(10$$\bar {1}$$1) Layers on Si(100) Substrate. Technical Physics Letters. 45(6). 529–532. 5 indexed citations

Бессолов, В. Н., et al.. (2017). Semipolar AlN on Si(100): Technology and properties. Microelectronic Engineering. 178. 34–37. 7 indexed citations

Бессолов, В. Н., et al.. (2016). Semipolar AlN and GaN on Si(100): HVPE technology and layer properties. Journal of Crystal Growth. 457. 202–206. 17 indexed citations

Бессолов, В. Н., E. V. Konenkova, С. А. Кукушкін, et al.. (2014). Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer. Technical Physics Letters. 40(5). 386–388. 6 indexed citations

10.

Sorokin, L. M., et al.. (2013). Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride vapour-phase epitaxy on SiC/(001)Si heterostructure. Journal of Physics Conference Series. 471. 12033–12033. 2 indexed citations

11.

Бессолов, В. Н., M. E. Kompan, E. V. Konenkova, et al.. (2008). Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer. Technical Physics Letters. 34(6). 479–482. 13 indexed citations

12.

Бессолов, В. Н., et al.. (2001). Initial stages of the GaN growth on oxidized silicon. Technical Physics Letters. 27(12). 1010–1012. 1 indexed citations

13.

Бессолов, В. Н., et al.. (2000). Nanorelief of a GaN surface: The effect of sulfide treatment. Semiconductors. 34(11). 1301–1304. 1 indexed citations

14.

Бессолов, В. Н., et al.. (1997). Sulfur passivation of InGaAs/AlGaAs SQW laser (977 nm) facets in alcohol-based solutions. Materials Science and Engineering B. 44(1-3). 380–382. 27 indexed citations

15.

Бессолов, В. Н., E. V. Konenkova, & М. В. Лебедев. (1996). Luminescence and X-ray photoelectron spectroscopy of GaAs surface sulfide-treated in alcohol solutions. Physics of the Solid State. 38(9). 1457–1462. 1 indexed citations

16.

Бессолов, В. Н., et al.. (1996). Kinetics of GaAs (100) surface passivation in aqueous solutions of sodium sulfide. Semiconductors. 30(2). 201–206. 3 indexed citations

17.

Бессолов, В. Н., et al.. (1995). Increase in the degree of catastrophic optical degradation of InGaAs/AlGaAs (977 nm) laser diodes after sulfidization in solutions based on isopropyl alcohol. Technical Physics Letters. 21(7). 561–562. 1 indexed citations

18.

Бессолов, В. Н., et al.. (1993). Mechanism of formation of a sulfide passivating coating on the surfaces of III-V semiconductors. Physics of the Solid State. 35(3). 335–339. 1 indexed citations

19.

Berkovits, V. L., et al.. (1991). Sulphide passivation of GaAs: study of surface band bending. Materials Science and Engineering B. 9(1-3). 43–46. 2 indexed citations

20.

Berkovits, V. L., et al.. (1991). Fermi-level movement at GaAs(001) surfaces passivated with sodium sulfide solutions. Journal of Applied Physics. 70(7). 3707–3711. 54 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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