В. Н. Бессолов
- Electrical and Electronic Engineering top 10%
- Atomic and Molecular Physics, and Optics top 5%
- Condensed Matter Physics top 5%
- Materials Chemistry
- Biomedical Engineering
- Co-authors
- М. В. ЛебедевE. V. KonenkovaDietrich R. T. ZahnС. А. КукушкінА. В. ОсиповS. N. RodinM. FriedrichM. P. Shcheglov
- Topics
- GaN-based semiconductor devices and materials (47 papers)Semiconductor Quantum Structures and Devices (33 papers)Ga2O3 and related materials (15 papers)
- Cited by
- Condensed Matter PhysicsAtomic and Molecular Physics, and OpticsElectrical and Electronic Engineering
- Partner nations
- RussiaGermanyUzbekistan
In The Last Decade
В. Н. Бессолов
61 papers receiving 721 citations
Peers
Comparison fields: 5 of 37
- Electrical and Electronic Engineering 531
- Atomic and Molecular Physics, and Optics 421
- Condensed Matter Physics 246
- Materials Chemistry 220
- Biomedical Engineering 208
Countries citing papers authored by В. Н. Бессолов
This map shows the geographic impact of В. Н. Бессолов's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by В. Н. Бессолов with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites В. Н. Бессолов more than expected).
Fields of papers citing papers by В. Н. Бессолов
This network shows the impact of papers produced by В. Н. Бессолов. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by В. Н. Бессолов. The network helps show where В. Н. Бессолов may publish in the future.
Co-authorship network of co-authors of В. Н. Бессолов
This figure shows the co-authorship network connecting the top 25 collaborators of В. Н. Бессолов. A scholar is included among the top collaborators of В. Н. Бессолов based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with В. Н. Бессолов. В. Н. Бессолов is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 1 | |
| 2 | 0 | |
| 3 | 1 | |
| 4 | 3 | |
| 5 | 2 | |
| 6 | 5 | |
| 7 | 17 | |
| 8 | 8 | |
| 9 | 6 | |
| 10 | 2 | |
| 11 | 13 | |
| 12 | 9 | |
| 13 | 1 | |
| 14 | 27 | |
| 15 | Luminescence and X-ray photoelectron spectroscopy of GaAs surface sulfide-treated in alcohol solutions | 1 |
| 16 | Kinetics of GaAs (100) surface passivation in aqueous solutions of sodium sulfide | 3 |
| 17 | Increase in the degree of catastrophic optical degradation of InGaAs/AlGaAs (977 nm) laser diodes after sulfidization in solutions based on isopropyl alcohol | 1 |
| 18 | Mechanism of formation of a sulfide passivating coating on the surfaces of III-V semiconductors | 1 |
| 19 | 2 | |
| 20 | 54 |
About В. Н. Бессолов
В. Н. Бессолов is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 71 papers that have together received 764 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (47 papers), Semiconductor Quantum Structures and Devices (33 papers) and Ga2O3 and related materials (15 papers). The work is most often cited by research in Condensed Matter Physics (246 citations), Atomic and Molecular Physics, and Optics (421 citations) and Electrical and Electronic Engineering (531 citations). В. Н. Бессолов has collaborated with scholars based in Russia, Germany and Uzbekistan. Frequent co-authors include М. В. Лебедев, E. V. Konenkova, Dietrich R. T. Zahn, С. А. Кукушкін, А. В. Осипов, S. N. Rodin, M. Friedrich, M. P. Shcheglov, V. L. Berkovits and V. I. Safarov. Their work appears in journals such as Journal of Applied Physics, Applied Surface Science and Thin Solid Films.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.