H.‐J. Bühlmann

456 total citations
32 papers, 363 citations indexed

About

H.‐J. Bühlmann is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, H.‐J. Bühlmann has authored 32 papers receiving a total of 363 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 9 papers in Condensed Matter Physics. Recurrent topics in H.‐J. Bühlmann's work include Semiconductor materials and devices (17 papers), Semiconductor Quantum Structures and Devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). H.‐J. Bühlmann is often cited by papers focused on Semiconductor materials and devices (17 papers), Semiconductor Quantum Structures and Devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). H.‐J. Bühlmann collaborates with scholars based in Switzerland, Germany and France. H.‐J. Bühlmann's co-authors include M. Ilegems, R. Houdré, J.‐F. Carlin, B. Jeckelmann, V. Wagner, O. Parillaud, P. Bhattacharya, B. Jeanneret, N. Grandjean and J. L. Staehli and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

H.‐J. Bühlmann

30 papers receiving 342 citations

Peers

H.‐J. Bühlmann
Jaakko Sormunen Finland
O. Imafuji Japan
M. Mannoh Japan
H. Jung Germany
S. Moehl France
K. Schüll Germany
Yuzaburoh Ban Japan
Franz Eberhard Germany
G. Karczewski Poland
M. A. Khan United States
Jaakko Sormunen Finland
H.‐J. Bühlmann
Citations per year, relative to H.‐J. Bühlmann H.‐J. Bühlmann (= 1×) peers Jaakko Sormunen

Countries citing papers authored by H.‐J. Bühlmann

Since Specialization
Citations

This map shows the geographic impact of H.‐J. Bühlmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.‐J. Bühlmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.‐J. Bühlmann more than expected).

Fields of papers citing papers by H.‐J. Bühlmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.‐J. Bühlmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.‐J. Bühlmann. The network helps show where H.‐J. Bühlmann may publish in the future.

Co-authorship network of co-authors of H.‐J. Bühlmann

This figure shows the co-authorship network connecting the top 25 collaborators of H.‐J. Bühlmann. A scholar is included among the top collaborators of H.‐J. Bühlmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H.‐J. Bühlmann. H.‐J. Bühlmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mosca, Mauro, Antonino Castiglia, H.‐J. Bühlmann, et al.. (2008). Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages. The European Physical Journal Applied Physics. 43(1). 51–53. 2 indexed citations
2.
Bühlmann, H.‐J., et al.. (2006). Selective GaN Epitaxy on Si(111) Substrates Using Porous Aluminum Oxide Buffer Layers. Journal of The Electrochemical Society. 153(2). G125–G125. 4 indexed citations
3.
Wagner, V., O. Parillaud, H.‐J. Bühlmann, et al.. (2002). Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy. Journal of Applied Physics. 92(3). 1307–1316. 53 indexed citations
4.
Parillaud, O., V. Wagner, H.‐J. Bühlmann, & M. Ilegems. (1999). Influence of the GaN Seed Layer and Growth Parameters on Selective Epitaxy of GaN by HVPE. physica status solidi (a). 176(1). 655–659. 5 indexed citations
5.
Letartre, Xavier, P. Rojo-Roméo, M. Bejar, et al.. (1999). Influence of Strain Compensation on Structural and Electrical Properties of InAlAs/InGaAs HEMT Structures Grown on InP. Japanese Journal of Applied Physics. 38(2S). 1169–1169. 3 indexed citations
6.
Jeanneret, B., et al.. (1997). A.C. measurements of edgeless currents in a Corbino ring in the quantum Hall regime. Solid State Communications. 102(4). 287–290. 1 indexed citations
7.
Bühlmann, H.‐J. & M. Ilegems. (1997). Monitoring of nitrogen gas purity by the hot filament method. Review of Scientific Instruments. 68(7). 2871–2877. 2 indexed citations
8.
Jeanneret, B., et al.. (1997). Influence of infrared illumination on the accuracy of the quantized Hall resistance. IEEE Transactions on Instrumentation and Measurement. 46(2). 285–288. 6 indexed citations
9.
Deveaud, B., et al.. (1995). Low-frequency noise measurements of AlxGa1−xAs/InyGa1−y As/GaAs high electron mobility transistors. Journal of Applied Physics. 78(4). 2509–2514. 10 indexed citations
10.
Jeanneret, B., B. Jeckelmann, H.‐J. Bühlmann, R. Houdré, & M. Ilegems. (1995). Influence of the device-width on the accuracy of quantization in the integer quantum Hall effect. IEEE Transactions on Instrumentation and Measurement. 44(2). 254–257. 22 indexed citations
11.
12.
Sallese, J.-M., Stephen Taylor, H.‐J. Bühlmann, et al.. (1994). As/P interdiffusion in ultrathin InAs/InP strained quantum wells. Applied Physics Letters. 65(3). 341–343. 16 indexed citations
13.
14.
Shi, Zhan, M. A. Py, H.‐J. Bühlmann, & M. Ilegems. (1993). DC Characterization and Low-Frequency Noise in δ-, Pulse- and Uniformly-doped GaAs/AIGaAs MODFETs. European Solid-State Device Research Conference. 447–450. 1 indexed citations
15.
Sugiura, Hisatoshi, A. Rudra, J.‐F. Carlin, et al.. (1993). Chemical beam epitaxy of InP, InGaAs and InGaAsP on non-planar InP substrates. Semiconductor Science and Technology. 8(6). 1063–1068. 4 indexed citations
16.
Bühlmann, H.‐J. & M. Ilegems. (1991). Characterization of AuGe / Ni / Au Contacts on GaAs / AlGaAs Heterostructures for Low‐Temperature Applications. Journal of The Electrochemical Society. 138(9). 2795–2798. 14 indexed citations
17.
Bühlmann, H.‐J., R. Houdré, M. Ilegems, et al.. (1991). Properties of alloyed AuGeNi-contacts on GaAs/Ga/AlAs-heterostructures. IEEE Transactions on Instrumentation and Measurement. 40(2). 228–230. 13 indexed citations
18.
Jeckelmann, B., et al.. (1991). Comparison of the quantized hall resistance in different GaAs/Al/sub x/Ga/sub 1-x/As heterostructures. IEEE Transactions on Instrumentation and Measurement. 40(2). 231–233. 8 indexed citations
19.
Bühlmann, H.‐J., et al.. (1986). Enhanced field emission from plasma-texturised Si-SiO 2 interfaces. Electronics Letters. 22(4). 212–214. 7 indexed citations
20.
Bühlmann, H.‐J., et al.. (1986). Enhanced Current Injection in Thermal Oxides Grown on Texturized Silicon. Journal of The Electrochemical Society. 133(3). 621–627. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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