D. Bernklau

661 total citations
17 papers, 503 citations indexed

About

D. Bernklau is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, D. Bernklau has authored 17 papers receiving a total of 503 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Atomic and Molecular Physics, and Optics, 13 papers in Electrical and Electronic Engineering and 5 papers in Materials Chemistry. Recurrent topics in D. Bernklau's work include Semiconductor Quantum Structures and Devices (12 papers), Semiconductor Lasers and Optical Devices (7 papers) and Acoustic Wave Resonator Technologies (4 papers). D. Bernklau is often cited by papers focused on Semiconductor Quantum Structures and Devices (12 papers), Semiconductor Lasers and Optical Devices (7 papers) and Acoustic Wave Resonator Technologies (4 papers). D. Bernklau collaborates with scholars based in Germany, Russia and United Kingdom. D. Bernklau's co-authors include H. Riechert, A. Yu. Egorov, M. Hetterich, Martin D. Dawson, A. Wixforth, W. Ruile, V. M. Ustinov, D. A. Livshits, Zh. I. Alfërov and Handong Sun and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

D. Bernklau

17 papers receiving 482 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. Bernklau Germany	9	433	403	191	91	90	17	503
M. Dumitrescu Finland	15	444 1.0×	425 1.1×	171 0.9×	98 1.1×	89 1.0×	56	535
Chantal Fontaine France	12	246 0.6×	238 0.6×	62 0.3×	95 1.0×	80 0.9×	32	356
B. Kunert Germany	13	413 1.0×	422 1.0×	108 0.6×	93 1.0×	100 1.1×	30	514
H. Thomas United Kingdom	12	275 0.6×	358 0.9×	96 0.5×	65 0.7×	32 0.4×	46	411
Z. Hang United States	8	395 0.9×	367 0.9×	39 0.2×	114 1.3×	51 0.6×	15	452
A. Sacedón Spain	13	408 0.9×	324 0.8×	128 0.7×	103 1.1×	69 0.8×	38	450
P.A. Claxton United Kingdom	15	543 1.3×	396 1.0×	84 0.4×	104 1.1×	52 0.6×	40	584
Hopil Bae United States	14	499 1.2×	463 1.1×	217 1.1×	51 0.6×	56 0.6×	38	552
E. A. Caridi United States	7	476 1.1×	405 1.0×	77 0.4×	98 1.1×	73 0.8×	14	513
R. M. Sieg United States	13	787 1.8×	780 1.9×	265 1.4×	90 1.0×	189 2.1×	35	903

Countries citing papers authored by D. Bernklau

Since Specialization

Citations

This map shows the geographic impact of D. Bernklau's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Bernklau with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Bernklau more than expected).

Fields of papers citing papers by D. Bernklau

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Bernklau. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Bernklau. The network helps show where D. Bernklau may publish in the future.

Co-authorship network of co-authors of D. Bernklau

This figure shows the co-authorship network connecting the top 25 collaborators of D. Bernklau. A scholar is included among the top collaborators of D. Bernklau based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Bernklau. D. Bernklau is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

Hetterich, M., Martin D. Dawson, A. Yu. Egorov, et al.. (2003). Comparison of GaInNAs/GaAs and strain-compensated InGaAs/GaAsP quantum wells for 1200-1300 nm diode lasers. 1. 368–369. 3 indexed citations

Sun, Handong, M. Hetterich, Martin D. Dawson, et al.. (2002). Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content. Journal of Applied Physics. 92(3). 1380–1385. 35 indexed citations

Wixforth, A., et al.. (2002). Quasi-monolithic GaAs/LiNbO/sub 3/-hybrids for acoustoelectric applications. OPUS (Augsburg University). 1. 201–204. 1 indexed citations

Egorov, A. Yu., et al.. (2001). Self-Assembled InAs Quantum Dots in an InGaAsN Matrix on GaAs. physica status solidi (b). 224(3). 839–843. 14 indexed citations

Egorov, A. Yu., D. Bernklau, B. Borchert, et al.. (2001). Growth of high quality InGaAsN heterostructures and their laser application. Journal of Crystal Growth. 227-228. 545–552. 45 indexed citations

Hetterich, M., Martin D. Dawson, A. Yu. Egorov, D. Bernklau, & H. Riechert. (2000). Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content. Applied Physics Letters. 76(8). 1030–1032. 172 indexed citations

Wixforth, A., et al.. (1999). Nonlinear acoustoelectric interactions in GaAs/LiNbO3 structures. Applied Physics Letters. 75(7). 965–967. 23 indexed citations

Egorov, A. Yu., D. Bernklau, D. A. Livshits, et al.. (1999). High power CW operation of InGaAsN lasers at 1.3µm. Electronics Letters. 35(19). 1643–1644. 81 indexed citations

Averbeck, R., et al.. (1998). GaN-based LEDs grown by molecular beam epitaxy. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3279. 28–28. 5 indexed citations

10.

Wixforth, A., et al.. (1998). Giant acoustoelectric effect in GaAs/LiNbO3 hybrids. Applied Physics Letters. 73(15). 2128–2130. 75 indexed citations

11.

Wixforth, A., et al.. (1997). Quasi-monolithic GaAsLiNbO3-hybrids for acoustoelectric applications. 1 indexed citations

12.

Hilpert, M., Martin R. Hofmann, C. Ellmers, et al.. (1997). Influence of carrier relaxation on the dynamics of stimulated emission in microcavity lasers. Applied Physics Letters. 71(26). 3761–3763. 8 indexed citations

13.

Michler, Peter, et al.. (1996). Emission dynamics of In0.2Ga0.8As/GaAs λ and 2λ microcavity lasers. Applied Physics Letters. 68(2). 156–158. 13 indexed citations

14.

Strauß, Uwe, D. Bernklau, H. Riechert, & S. Finkbeiner. (1996). Carrier mobilities in graded InxGa1−xAs/Al0.2Ga0.8As quantum wells for high electron mobility transistors. Journal of Applied Physics. 80(1). 322–325. 2 indexed citations

15.

Riechert, H., R. Averbeck, & D. Bernklau. (1993). Temperature dependence of the minimum V/III ratio for the growth of InxGa1-xAs. Journal of Crystal Growth. 127(1-4). 575–578. 2 indexed citations

16.

Riechert, H., et al.. (1991). MBE growth and post-growth annealing of GaAs-based resonant tunneling structures, viewed in relation to interface roughness. Journal of Crystal Growth. 111(1-4). 1100–1104. 4 indexed citations

17.

Riechert, H., et al.. (1990). High performance resonant tunnelling structures on GaAs substrates. Electronics Letters. 26(5). 340–342. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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