H. Schäfer

949 total citations
40 papers, 536 citations indexed

About

H. Schäfer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, H. Schäfer has authored 40 papers receiving a total of 536 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in H. Schäfer's work include Semiconductor materials and devices (13 papers), Radio Frequency Integrated Circuit Design (12 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). H. Schäfer is often cited by papers focused on Semiconductor materials and devices (13 papers), Radio Frequency Integrated Circuit Design (12 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). H. Schäfer collaborates with scholars based in Germany, Austria and Italy. H. Schäfer's co-authors include T.F. Meister, Klaus Aufinger, J. Böck, H. Knapp, S. Boguth, M. Wurzer, Lorenz Risch, F. Hofmann, Frank Becker and D. A. Pawlik and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Applied Surface Science.

In The Last Decade

H. Schäfer

38 papers receiving 501 citations

Peers

Countries citing papers authored by H. Schäfer

Since Specialization

Citations

This map shows the geographic impact of H. Schäfer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Schäfer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Schäfer more than expected).

Fields of papers citing papers by H. Schäfer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Schäfer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Schäfer. The network helps show where H. Schäfer may publish in the future.

Co-authorship network of co-authors of H. Schäfer

This figure shows the co-authorship network connecting the top 25 collaborators of H. Schäfer. A scholar is included among the top collaborators of H. Schäfer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Schäfer. H. Schäfer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	A fully integrated SiGe low phase noise push-push VCO for 82 GHz 2005 ·AMS Acta (University of Bologna) ·R. Wanner, H. Schäfer, Rudolf Lachner, G.R. Olbrich, P. Russer	5
2	3.3 ps SiGe bipolar technology 2005 ·J. Böck, H. Schäfer, H. Knapp, Klaus Aufinger, M. Wurzer, S. Boguth, (unknown), R. Stengl, (unknown), T.F. Meister	30
3	SiGe/Si layers—early stages of plastic relaxation 2005 ·Journal of Physics D Applied Physics ·Ralf Köhler, H. Raidt, Wolfgang Neumann, (unknown), H. Schäfer, Uwe Richter	5
4	High-speed SiGe HBT technology and applications to mm-wave circuits 2005 ·T.F. Meister, H. Knapp, H. Schäfer, Klaus Aufinger, R. Stengl, S. Boguth, (unknown), M. Rest, (unknown), M. Wurzer, (unknown), J. Böck	7
5	Nanoscale finFETs for low power applications 2004 ·W. Rösner, E. Landgraf, (unknown), (unknown), H. Schäfer, M. Städele, T. Schulz, F. Hofmann, R.J. Luyken, Michael Specht, J. Hartwich, W. Pamler, Lorenz Risch	3
6	Nanoscale FinFETs for low power applications 2004 ·Solid-State Electronics ·W. Rösner, E. Landgraf, Johannes Kretz, (unknown), H. Schäfer, M. Städele, T. Schulz, F. Hofmann, R.J. Luyken, Michael Specht, J. Hartwich, W. Pamler, Lorenz Risch	18
7	SiGe base bipolar technology with 74 GHz f/sub max/ and 11 ps gate delay 2002 ·T.F. Meister, H. Schäfer, M. Franosch, (unknown), Klaus Aufinger, Ulrich Scheler, (unknown), H. Stolz, S. Boguth, J. Böck	19
8	High-speed SiGe:C bipolar technology 2002 ·J. Böck, H. Schäfer, H. Knapp, (unknown), Klaus Aufinger, M. Wurzer, S. Boguth, R. Stengl, (unknown), T.F. Meister	24
9	Improvement of thermal uniformity of RTP-CVD equipment by application of simulation 2002 ·Alfred Kersch, H. Schäfer, C. Werner	1
10	Impact of Elevated Source/Drain on the Reverse Short Channel Effect 1999 ·European Solid-State Device Research Conference ·D. Schumann, (unknown), (unknown), (unknown), Stephan Pindl, H. Schäfer	1
11	2 dB noise figure, 10.5 GHz LNA using SiGe bipolartechnology 1999 ·Electronics Letters ·(unknown), W. Wilhelm, T.F. Meister, H. Knapp, H.-D. Wohlmuth, Klaus Aufinger, M. Wurzer, J. Böck, H. Schäfer, Arpad L. Scholtz	16
12	Molecular beam epitaxy growth and thermal stability of Si1−xGex layers on extremely thin silicon-on-insulator substrates 1998 ·Thin Solid Films ·Karl Brünner, (unknown), G. Abstreiter, H. Schäfer, (unknown)	24
13	Fabrication and Electrical Characterization of SI/SIGE P-Channel MOSFETs with a Delta Doped Boron Layer 1996 ·European Solid-State Device Research Conference ·Lorenz Risch, H. Fischer, F. Hofmann, H. Schäfer, M. Eller, (unknown)	3
14	Vertical MOS transistors with 70 nm channel length 1996 ·IEEE Transactions on Electron Devices ·Lorenz Risch, Wolfgang H. Krautschneider, F. Hofmann, H. Schäfer, (unknown), W. Rösner	53
15	Vertical MOS Transistors with 70nm Channel Length 1995 ·European Solid-State Device Research Conference ·Lorenz Risch, Wolfgang H. Krautschneider, F. Hofmann, H. Schäfer	3
16	In-Situ Doped Emitter-Polysilicon for 0.5 μm Silicon Bipolar Technology 1995 ·European Solid-State Device Research Conference ·J. Böck, M. Franosch, H. Schäfer, H. von Philipsborn, (unknown)	1
17	A 0.4μm Quantum Well p-channel MOSFET with High Current 1994 ·European Solid-State Device Research Conference ·F. Hofmann, H. Schäfer, (unknown), Lorenz Risch	2
18	Modelling and Fabrication of a P-Channel SiGe-MOSFET with Very High Mobility and Transconductance 1994 ·(unknown), F. Hofmann, H. Schäfer, Lorenz Risch, K.R. Hofmann	5
19	Process and film characterization of low pressure tetraethylorthosilicate–borophosphosilicate glass 1986 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·Frank Becker, D. A. Pawlik, H. Schäfer, (unknown)	47
20	Survey and Study on Sand and Dirt 1971 ·Defense Technical Information Center (DTIC) ·(unknown), H. Schäfer	0

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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