H. von Philipsborn
About
In The Last Decade
H. von Philipsborn
47 papers receiving 518 citations
Peers
Comparison fields: 5 of 73
- Electrical and Electronic Engineering 251
- Materials Chemistry 220
- Electronic, Optical and Magnetic Materials 196
- Condensed Matter Physics 138
- Atomic and Molecular Physics, and Optics 95
Countries citing papers authored by H. von Philipsborn
This map shows the geographic impact of H. von Philipsborn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. von Philipsborn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. von Philipsborn more than expected).
Fields of papers citing papers by H. von Philipsborn
This network shows the impact of papers produced by H. von Philipsborn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. von Philipsborn. The network helps show where H. von Philipsborn may publish in the future.
Co-authorship network of co-authors of H. von Philipsborn
This figure shows the co-authorship network connecting the top 25 collaborators of H. von Philipsborn. A scholar is included among the top collaborators of H. von Philipsborn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. von Philipsborn. H. von Philipsborn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 4 | |
| 2 | 9 | |
| 3 | 2 | |
| 4 | 2 | |
| 5 | 15 | |
| 6 | 2 | |
| 7 | 3 | |
| 8 | 0 | |
| 9 | A Partially Depleted SOI CMOS-technology with advanced processing for 130 nm channel length | 1 |
| 10 | DC and AC Performance of Si and Si/Si(1-x) Ge(x) Bipolar Transistors at Temperatures up to 300 C | 1 |
| 11 | 1 | |
| 12 | 6 | |
| 13 | In-Situ Doped Emitter-Polysilicon for 0.5 μm Silicon Bipolar Technology | 1 |
| 14 | Controlled Sub-nm Oxide Growth and its Application to High Speed Bipolar Poly-Emitter Transistors | 1 |
| 15 | 10 Gbit/s on-chip photodetection with self-aligned silicon bipolar transistors | 4 |
| 16 | 7 | |
| 17 | 6 | |
| 18 | 8 | |
| 19 | 7 | |
| 20 | 3 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.