T.F. Meister

2.4k total citations
100 papers, 1.7k citations indexed

About

T.F. Meister is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, T.F. Meister has authored 100 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 98 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in T.F. Meister's work include Radio Frequency Integrated Circuit Design (66 papers), Photonic and Optical Devices (44 papers) and Microwave Engineering and Waveguides (26 papers). T.F. Meister is often cited by papers focused on Radio Frequency Integrated Circuit Design (66 papers), Photonic and Optical Devices (44 papers) and Microwave Engineering and Waveguides (26 papers). T.F. Meister collaborates with scholars based in Germany, Austria and France. T.F. Meister's co-authors include Klaus Aufinger, H. Knapp, J. Böck, M. Wurzer, S. Boguth, H.-M. Rein, Arpad L. Scholtz, R. Stengl, A. Felder and W. Simbürger and has published in prestigious journals such as Physical Review Letters, IEEE Journal of Solid-State Circuits and Applied Surface Science.

In The Last Decade

T.F. Meister

96 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T.F. Meister Germany 24 1.6k 218 195 60 51 100 1.7k
Shuhei Amakawa Japan 19 1.6k 1.0× 296 1.4× 131 0.7× 79 1.3× 75 1.5× 167 1.7k
J. Böck Germany 24 1.8k 1.1× 208 1.0× 192 1.0× 151 2.5× 66 1.3× 88 1.8k
J. Graffeuil France 20 1.3k 0.8× 442 2.0× 209 1.1× 65 1.1× 32 0.6× 162 1.3k
H.-M. Rein Germany 28 2.5k 1.6× 320 1.5× 343 1.8× 49 0.8× 29 0.6× 140 2.6k
G. Freeman United States 22 1.5k 0.9× 183 0.8× 130 0.7× 27 0.5× 18 0.4× 85 1.5k
H. Knapp Germany 24 1.7k 1.1× 121 0.6× 236 1.2× 164 2.7× 58 1.1× 139 1.8k
M. Ida Japan 22 1.5k 1.0× 503 2.3× 141 0.7× 39 0.7× 21 0.4× 139 1.6k
J.E. Sitch United Kingdom 11 703 0.4× 298 1.4× 93 0.5× 27 0.5× 32 0.6× 66 761
M.A. Gouker United States 10 364 0.2× 204 0.9× 111 0.6× 104 1.7× 30 0.6× 30 502
Olivier Llopis France 17 776 0.5× 478 2.2× 168 0.9× 14 0.2× 36 0.7× 107 856

Countries citing papers authored by T.F. Meister

Since Specialization
Citations

This map shows the geographic impact of T.F. Meister's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.F. Meister with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.F. Meister more than expected).

Fields of papers citing papers by T.F. Meister

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.F. Meister. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.F. Meister. The network helps show where T.F. Meister may publish in the future.

Co-authorship network of co-authors of T.F. Meister

This figure shows the co-authorship network connecting the top 25 collaborators of T.F. Meister. A scholar is included among the top collaborators of T.F. Meister based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T.F. Meister. T.F. Meister is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Böck, J., Klaus Aufinger, S. Boguth, et al.. (2015). SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project. 121–124. 125 indexed citations
2.
Hamidipour, Abouzar, Martin Jahn, T.F. Meister, Klaus Aufinger, & Andreas Stelzer. (2012). A comparison of power amplifiers in two generations of SiGe:C technologies. German Microwave Conference. 1–3. 3 indexed citations
3.
Chevalier, P., T.F. Meister, B. Heinemann, et al.. (2011). Towards THz SiGe HBTs. Zenodo (CERN European Organization for Nuclear Research). 57–65. 75 indexed citations
4.
Kissinger, Dietmar, Klaus Aufinger, T.F. Meister, Linus Maurer, & Robert Weigel. (2010). A high-linearity broadband 55 – 77 GHz differential low-noise amplifier with 20 dB gain in SiGe technology. Asia-Pacific Microwave Conference. 1501–1504. 6 indexed citations
5.
Knapp, H., T.F. Meister, W. Liebl, et al.. (2010). Static frequency dividers up to 133GHz in SiGe:C bipolar technology. 29–32. 29 indexed citations
6.
Trotta, Saverio, H. Knapp, Klaus Aufinger, et al.. (2006). An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology. 21–24. 2 indexed citations
7.
Böck, J., H. Schäfer, H. Knapp, et al.. (2005). 3.3 ps SiGe bipolar technology. 255–258. 30 indexed citations
8.
Knapp, H., et al.. (2004). 100-Gb/s 27-1 and 54-Gb/s 2ll-l PRBS Generators in SiGe Bipolar Technology. 1 indexed citations
9.
Böck, J., H. Knapp, Klaus Aufinger, et al.. (2003). 12 ps implanted base silicon bipolar technology. 553–556. 3 indexed citations
10.
Wilhelm, W., H. Knapp, M. Wurzer, et al.. (2002). Monolithic integrated LNAs in silicon-based bipolar technologies. 37. 400–403. 5 indexed citations
11.
Meister, T.F., H. Schäfer, M. Franosch, et al.. (2002). SiGe base bipolar technology with 74 GHz f/sub max/ and 11 ps gate delay. 739–742. 19 indexed citations
12.
Bouvard, D. & T.F. Meister. (2000). Modelling bulk viscosity of powder aggregate during sintering. Modelling and Simulation in Materials Science and Engineering. 8(3). 377–388. 11 indexed citations
13.
Pohl, M., Klaus Aufinger, J. Böck, T.F. Meister, & H. von Philipsborn. (1998). DC and AC Performance of Si and Si/Si(1-x) Ge(x) Bipolar Transistors at Temperatures up to 300 C. European Solid-State Device Research Conference. 100–103. 1 indexed citations
14.
Schmid, Rolf, et al.. (1998). 40 Gbit/s EAM driver IC in SiGe bipolar technology. Electronics Letters. 34(11). 1095–1097. 23 indexed citations
15.
Gabl, R., et al.. (1997). Low-Frequency Noise Characteristics of Advanced Si and SiGe Bipolar Transistors. European Solid-State Device Research Conference. 536–539. 14 indexed citations
16.
Böck, J., A. Felder, T.F. Meister, et al.. (1995). A 0.6 μm Si Bipolar Technology with 17 ps CML Gate Delay and 30 GHz Static Frequency Divider. European Solid-State Device Research Conference. 417–420. 4 indexed citations
17.
Meister, T.F., R. Stengl, A. Felder, H.-M. Rein, & L. Treitinger. (1993). Selective Epitaxial Bipolar Technology for 25 to 40 Gb/s ICs. European Solid-State Device Research Conference. 203–210. 2 indexed citations
18.
Kabza, H., Krista A. Ehinger, T.F. Meister, et al.. (1989). A 1- mu m polysilicon self-aligning bipolar process for low-power high-speed integrated circuits. IEEE Electron Device Letters. 10(8). 344–346. 18 indexed citations
19.
Meister, T.F., et al.. (1987). The role of the interfacial layer in bipolar (poly-Si)-emitter transistors. Solid-State Electronics. 30(11). 1153–1158. 11 indexed citations
20.
Meister, T.F. & H. Müller–Krumbhaar. (1983). Kinetic Depinning Transitions. Physical Review Letters. 51(19). 1780–1782. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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