W. Rösner

1.2k total citations
45 papers, 929 citations indexed

About

W. Rösner is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, W. Rösner has authored 45 papers receiving a total of 929 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 5 papers in Biomedical Engineering. Recurrent topics in W. Rösner's work include Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (29 papers) and Silicon Carbide Semiconductor Technologies (8 papers). W. Rösner is often cited by papers focused on Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (29 papers) and Silicon Carbide Semiconductor Technologies (8 papers). W. Rösner collaborates with scholars based in Germany and United States. W. Rösner's co-authors include H. Ruder, H. Herold, Günter Wunner, Lorenz Risch, R.J. Luyken, F. Hofmann, M. Städele, T. Schulz, E. Landgraf and U. Langmann and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

W. Rösner

43 papers receiving 872 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
W. Rösner Germany	15	552	356	92	84	76	45	929
J. N. Hollenhorst United States	12	231 0.4×	405 1.1×	72 0.8×	54 0.6×	80 1.1×	21	607
V. V. Yan'kov United States	12	203 0.4×	171 0.5×	103 1.1×	25 0.3×	94 1.2×	45	414
J. C. Vaissière France	15	459 0.8×	385 1.1×	52 0.6×	33 0.4×	34 0.4×	66	629
А. В. Антонов Russia	17	511 0.9×	471 1.3×	40 0.4×	26 0.3×	68 0.9×	88	708
Brian Pepper United States	13	464 0.8×	479 1.3×	28 0.3×	32 0.4×	48 0.6×	52	655
Michael Crescimanno United States	15	91 0.2×	246 0.7×	70 0.8×	113 1.3×	68 0.9×	48	498
Adriana Lita United States	10	249 0.5×	293 0.8×	105 1.1×	9 0.1×	84 1.1×	16	578
A. Macor France	12	212 0.4×	208 0.6×	109 1.2×	75 0.9×	26 0.3×	35	453
Naoyuki Sato Japan	13	292 0.5×	272 0.8×	199 2.2×	28 0.3×	30 0.4×	46	602
Quentin Glorieux France	18	147 0.3×	649 1.8×	52 0.6×	81 1.0×	70 0.9×	49	785

Countries citing papers authored by W. Rösner

Since Specialization

Citations

This map shows the geographic impact of W. Rösner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Rösner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Rösner more than expected).

Fields of papers citing papers by W. Rösner

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Rösner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Rösner. The network helps show where W. Rösner may publish in the future.

Co-authorship network of co-authors of W. Rösner

This figure shows the co-authorship network connecting the top 25 collaborators of W. Rösner. A scholar is included among the top collaborators of W. Rösner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Rösner. W. Rösner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Graham, Anthony, J. Hartwich, Johannes Kretz, et al.. (2006). Comparison of Trimming Techniques for Sub-Lithographic Silicon Structures. Japanese Journal of Applied Physics. 45(6S). 5552–5552. 4 indexed citations

Weber, W., W. Rösner, J. Hartwich, et al.. (2006). Planar Double Gate Transistors with Asymmetric Independent Gates. 20. 126–127. 2 indexed citations

Hartwich, J., F. Hofmann, Johannes Kretz, et al.. (2005). Fabrication of ultra-thin-film SOI transistors using the recessed channel concept. Microelectronic Engineering. 78-79. 224–228. 2 indexed citations

Weber, W., et al.. (2005). Electron beam lithography for nanometer-scale planar double-gate transistors. Microelectronic Engineering. 78-79. 206–211. 3 indexed citations

Granzner, R., V. M. Polyakov, Frank Schwierz, et al.. (2005). Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results. Microelectronic Engineering. 83(2). 241–246. 90 indexed citations

Rösner, W., E. Landgraf, H. Schäfer, et al.. (2004). Nanoscale finFETs for low power applications. 763. 452–453. 3 indexed citations

Rösner, W., E. Landgraf, Johannes Kretz, et al.. (2004). Nanoscale FinFETs for low power applications. Solid-State Electronics. 48(10-11). 1819–1823. 18 indexed citations

Luyken, R.J., Michael Specht, W. Rösner, et al.. (2004). Drain leakage mechanisms in fully depleted SOI devices with undoped channel [MOSFETs]. 419–422. 1 indexed citations

Hartwich, J., F. Hofmann, Johannes Kretz, et al.. (2004). Off current adjustment in ultra-thin SOI MOSFETs. 305–308. 3 indexed citations

10.

Schulz, T., C. Pacha, R.J. Luyken, et al.. (2003). Impact of technology parameters on device performance of UTB-SOI CMOS. Solid-State Electronics. 48(4). 521–527. 11 indexed citations

11.

Schulz, T., et al.. (2001). Short-channel vertical sidewall MOSFETs. IEEE Transactions on Electron Devices. 48(8). 1783–1788. 58 indexed citations

12.

Mecking, Stefan, et al.. (1999). An Extended BSIM3v3 Model Card for a Vertical 130 nm p-MOSFET. European Solid-State Device Research Conference. 1. 460–463. 1 indexed citations

13.

Schulz, T., et al.. (1998). 130nm Vertical PMOS Transistors with P+ Poly-Gate. European Solid-State Device Research Conference. 168–171. 2 indexed citations

14.

Rösner, W., et al.. (1998). Elektronik mit einzelnen Elektronen?. Physikalische Blätter. 54(6). 536–537. 1 indexed citations

15.

Risch, Lorenz, et al.. (1997). Recent Progress with Vertical Transistors. European Solid-State Device Research Conference. 34–41. 3 indexed citations

16.

Risch, Lorenz, et al.. (1997). Advanced self aligned SOI concepts for vertical MOS transistors with ultrashort channel lengths. European Solid-State Device Research Conference. 628–631. 4 indexed citations

17.

Ruder, H., H. Herold, W. Rösner, & Günter Wunner. (1984). Pulsars: High magnetic field laboratories with 10° T. Physica B+C. 127(1-3). 11–25. 2 indexed citations

18.

Ruder, H., H. Herold, W. Rösner, & Günter Wunner. (1983). Atome in extrem starken Magnetfeldern. Physikalische Blätter. 39(7). 183–189. 1 indexed citations

19.

Rösner, W., H. Herold, H. Ruder, & Günter Wunner. (1983). Approximate solution of the strongly magnetized hydrogenic problem with the use of an asymptotic property. Physical review. A, General physics. 28(4). 2071–2077. 16 indexed citations

20.

Rösner, W., et al.. (1982). Hartree-Fock calculations for atoms in strong magnetic fields. I. Energy levels of two-electron systems. Journal of Physics B Atomic and Molecular Physics. 15(13). 1959–1976. 47 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact