J. Böck

2.7k total citations
88 papers, 1.8k citations indexed

About

J. Böck is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, J. Böck has authored 88 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 88 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 6 papers in Biomedical Engineering. Recurrent topics in J. Böck's work include Radio Frequency Integrated Circuit Design (70 papers), Photonic and Optical Devices (34 papers) and Microwave Engineering and Waveguides (33 papers). J. Böck is often cited by papers focused on Radio Frequency Integrated Circuit Design (70 papers), Photonic and Optical Devices (34 papers) and Microwave Engineering and Waveguides (33 papers). J. Böck collaborates with scholars based in Germany, Austria and France. J. Böck's co-authors include Klaus Aufinger, T.F. Meister, H. Knapp, M. Wurzer, Rudolf Lachner, S. Boguth, Arpad L. Scholtz, H.-M. Rein, Hao Li and B. Heinemann and has published in prestigious journals such as Proceedings of the IEEE, IEEE Journal of Solid-State Circuits and Applied Surface Science.

In The Last Decade

J. Böck

86 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Böck Germany	24	1.8k	208	192	151	66	88	1.8k
T.F. Meister Germany	24	1.6k 0.9×	218 1.0×	195 1.0×	60 0.4×	51 0.8×	100	1.7k
H. Knapp Germany	24	1.7k 1.0×	121 0.6×	236 1.2×	164 1.1×	58 0.9×	139	1.8k
Shuhei Amakawa Japan	19	1.6k 0.9×	296 1.4×	131 0.7×	79 0.5×	75 1.1×	167	1.7k
H.-M. Rein Germany	28	2.5k 1.4×	320 1.5×	343 1.8×	49 0.3×	29 0.4×	140	2.6k
M. Ida Japan	22	1.5k 0.9×	503 2.4×	141 0.7×	39 0.3×	21 0.3×	139	1.6k
J. Graffeuil France	20	1.3k 0.7×	442 2.1×	209 1.1×	65 0.4×	32 0.5×	162	1.3k
N. Zamdmer United States	21	1.4k 0.8×	155 0.7×	223 1.2×	14 0.1×	55 0.8×	48	1.5k
M.A. Gouker United States	10	364 0.2×	204 1.0×	111 0.6×	104 0.7×	30 0.5×	30	502
Arpad L. Scholtz Austria	20	1.1k 0.6×	174 0.8×	154 0.8×	181 1.2×	31 0.5×	111	1.2k
Munkyo Seo United States	25	1.7k 1.0×	258 1.2×	335 1.7×	216 1.4×	196 3.0×	101	1.8k

Countries citing papers authored by J. Böck

Since Specialization

Citations

This map shows the geographic impact of J. Böck's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Böck with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Böck more than expected).

Fields of papers citing papers by J. Böck

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Böck. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Böck. The network helps show where J. Böck may publish in the future.

Co-authorship network of co-authors of J. Böck

This figure shows the co-authorship network connecting the top 25 collaborators of J. Böck. A scholar is included among the top collaborators of J. Böck based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Böck. J. Böck is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chevalier, P., W. Liebl, H. Rücker, et al.. (2018). SiGe BiCMOS Current Status and Future Trends in Europe. 64–71. 52 indexed citations

Schröter, M., P. Chevalier, B. Heinemann, et al.. (2016). SiGe HBT Technology: Future Trends and TCAD-Based Roadmap. Proceedings of the IEEE. 105(6). 1068–1086. 125 indexed citations

Knapp, H., Hao Li, Klaus Aufinger, et al.. (2016). Wideband 148–188 GHz push-push VCO using variable inductance and capacitance. 313–316. 8 indexed citations

Böck, J., Klaus Aufinger, S. Boguth, et al.. (2015). SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project. 121–124. 125 indexed citations

Wojnowski, Maciej, Walter Hartner, J. Böck, et al.. (2014). Chip-to-rectangular waveguide transition realized in embedded Wafer Level Ball Grid Array (eWLB) package. 1–4. 15 indexed citations

Forstner, Hans Peter, H. Knapp, H.-M. Rein, et al.. (2007). A 19GHz VCO downconverter MMIC for 77GHz automotive radar frontends in a SiGe bipolar production technology. 39. 178–181. 10 indexed citations

Trotta, Saverio, H. Knapp, Klaus Aufinger, et al.. (2007). A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar. 430–613. 26 indexed citations

Trotta, Saverio, H. Knapp, Klaus Aufinger, et al.. (2006). An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology. 21–24. 2 indexed citations

Wurzer, M., H. Knapp, J. Böck, & T.F. Meister. (2005). Digital ICs for high data rate/high voltage swing applications in a production-near SiGe technology. 38. 4 pp.–4 pp.. 2 indexed citations

10.

Knapp, H., et al.. (2004). 100-Gb/s 27-1 and 54-Gb/s 2ll-l PRBS Generators in SiGe Bipolar Technology. 1 indexed citations

11.

Böck, J., et al.. (2003). 42 GHz active frequency doubler in SiGe bipolar technology. 54–57. 40 indexed citations

12.

Böck, J., H. Knapp, Klaus Aufinger, et al.. (2003). 12 ps implanted base silicon bipolar technology. 553–556. 3 indexed citations

13.

Böck, J., et al.. (2002). 28 GHz active I/Q mixer with integrated QVCO in SiGe bipolar technology. European Solid-State Circuits Conference. 159–162. 3 indexed citations

14.

Böck, J., H. Schäfer, H. Knapp, et al.. (2002). High-speed SiGe:C bipolar technology. 15.5.1–15.5.4. 24 indexed citations

15.

Wilhelm, W., H. Knapp, M. Wurzer, et al.. (2002). Monolithic integrated LNAs in silicon-based bipolar technologies. 37. 400–403. 5 indexed citations

16.

Knapp, H., Klaus Aufinger, J. Böck, et al.. (2000). Monolithic Low-Noise Amplifiers up to 10 GHz in Silicon and SiGe Bipolar Technologies. 1–4. 5 indexed citations

17.

Pohl, M., Klaus Aufinger, J. Böck, T.F. Meister, & H. von Philipsborn. (1998). DC and AC Performance of Si and Si/Si(1-x) Ge(x) Bipolar Transistors at Temperatures up to 300 C. European Solid-State Device Research Conference. 100–103. 1 indexed citations

18.

Aufinger, Klaus & J. Böck. (1996). A Straightforward Noise De-Embedding Method and its Application to High-Speed Silicon Bipolar Transistors. European Solid-State Device Research Conference. 957–960. 23 indexed citations

19.

Böck, J., et al.. (1995). In-Situ Doped Emitter-Polysilicon for 0.5 μm Silicon Bipolar Technology. European Solid-State Device Research Conference. 421–424. 1 indexed citations

20.

Böck, J., A. Felder, T.F. Meister, et al.. (1995). A 0.6 μm Si Bipolar Technology with 17 ps CML Gate Delay and 30 GHz Static Frequency Divider. European Solid-State Device Research Conference. 417–420. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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