F. Hofmann

1.7k citations
63 papers · 1.1k indexed · h-index 19

Impact in

Papers in

    • Analytical Chemistry and Sensors 6
    • Semiconductor materials and devices 42
    • Advancements in Semiconductor Devices and Circuit Design 33
    • Silicon Carbide Semiconductor Technologies 10
    • Advanced Memory and Neural Computing 7
    • Integrated Circuits and Semiconductor Failure Analysis 4

F. Hofmann

63 papers receiving 1.0k citations

Peers

F. Hofmann
Comparison fields: 5 of 69
  • Bioengineering 185
  • Astronomy and Astrophysics 185
  • Electrical and Electronic Engineering 600
  • Electrochemistry 54
  • Biomedical Engineering 326
Replace D G Ashworth with:
D G Ashworth United Kingdom
G. Jordan Maclay United States
Richard Sonnenfeld United States
G. A. Massey United States
Dae M. Kim United States
Ariel Guerreiro Portugal
Georgy Fedorov Russia
Franck Vincent Switzerland
Marco Colangelo United States
Vadim Kovalyuk Russia
F. Hofmann relative to D G Ashworth United Kingdom D G Ashworth's profile →
Citations per field
00.5×10.7×
D G Ashworth · 1×
Citations per year

Countries citing papers authored by F. Hofmann

Since Specialization
Citations

This map shows the geographic impact of F. Hofmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Hofmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Hofmann more than expected).

Fields of papers citing papers by F. Hofmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Hofmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Hofmann. The network helps show where F. Hofmann may publish in the future.

Co-authorship network

The 25 scholars most cited alongside F. Hofmann, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with F. Hofmann Line = papers co-authored together F. Hofmann links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown
#Work
1 201814
2 20151
3 201043
4 20061
5 20052
6 20051
7 20043
8 200418
9 20041
10 20043
11 200332
12 20029
13 199812
14 19971
15
Fabrication and Electrical Characterization of SI/SIGE P-Channel MOSFETs with a Delta Doped Boron Layer
19963
16 19964
17
Vertical MOS Transistors with 70nm Channel Length
19953
18
A 0.4μm Quantum Well p-channel MOSFET with High Current
19942
19 19945
20
Interface states extracted from gated diode and charge pumping measurements
19903

About F. Hofmann

F. Hofmann is a scholar working on Bioengineering, Electrical and Electronic Engineering, Oceanography, Geology and Electrochemistry, having authored 63 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (42 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers), Silicon Carbide Semiconductor Technologies (10 papers), Advanced Memory and Neural Computing (7 papers), Geophysics and Gravity Measurements (6 papers), Analytical Chemistry and Sensors (6 papers), Analog and Mixed-Signal Circuit Design (5 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). The work is most often cited by research in Bioengineering (185 citations), Astronomy and Astrophysics (185 citations), Electrical and Electronic Engineering (600 citations), Electrochemistry (54 citations) and Biomedical Engineering (326 citations). F. Hofmann has collaborated with scholars based in Germany, United States and France. Frequent co-authors include Jürgen Müller, Christian Paulus, M. Schienle, Alexander Frey, R.J. Luyken, R. Thewes, Lorenz Risch, W. Rösner, Liliane Biskupek and U. Grüning. Their work appears in journals such as Solid-State Electronics, IEEE Electron Device Letters, Classical and Quantum Gravity, Journal of Applied Physics and Journal of Geodesy.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026