K. Bertulis

912 total citations
29 papers, 747 citations indexed

About

K. Bertulis is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Spectroscopy. According to data from OpenAlex, K. Bertulis has authored 29 papers receiving a total of 747 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Atomic and Molecular Physics, and Optics, 25 papers in Electrical and Electronic Engineering and 10 papers in Spectroscopy. Recurrent topics in K. Bertulis's work include Semiconductor Quantum Structures and Devices (21 papers), Terahertz technology and applications (14 papers) and Spectroscopy and Laser Applications (10 papers). K. Bertulis is often cited by papers focused on Semiconductor Quantum Structures and Devices (21 papers), Terahertz technology and applications (14 papers) and Spectroscopy and Laser Applications (10 papers). K. Bertulis collaborates with scholars based in Lithuania, Sweden and Poland. K. Bertulis's co-authors include A. Krotkus, W. Walukiewicz, K. M. Yu, V. Pačebutas, Kirstin Alberi, O. D. Dubón, R. Adomavičius, G. Molis, S. Marcinkevičius and K. Jarašiūnas and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics Condensed Matter.

In The Last Decade

K. Bertulis

28 papers receiving 698 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Bertulis Lithuania 14 616 568 149 138 97 29 747
V. Pačebutas Lithuania 15 613 1.0× 592 1.0× 147 1.0× 238 1.7× 95 1.0× 59 819
M. Sadeghi Sweden 16 566 0.9× 541 1.0× 137 0.9× 130 0.9× 44 0.5× 64 623
Tomofumi Furuta Japan 16 568 0.9× 1.0k 1.8× 47 0.3× 149 1.1× 104 1.1× 57 1.1k
Ichirou Nomura Japan 15 497 0.8× 558 1.0× 151 1.0× 262 1.9× 27 0.3× 60 692
F. Bastiman United Kingdom 19 840 1.4× 638 1.1× 162 1.1× 256 1.9× 44 0.5× 48 953
S. R. Jin United Kingdom 14 663 1.1× 586 1.0× 221 1.5× 170 1.2× 115 1.2× 42 799
S. Baierl Germany 8 578 0.9× 444 0.8× 125 0.8× 109 0.8× 91 0.9× 8 770
N. A. Maleev Russia 15 1.1k 1.7× 1.1k 2.0× 80 0.5× 222 1.6× 50 0.5× 81 1.2k
D. T. McInturff United States 16 842 1.4× 772 1.4× 207 1.4× 196 1.4× 25 0.3× 42 1.0k
M. B. M. Rinzan United States 12 201 0.3× 255 0.4× 75 0.5× 71 0.5× 65 0.7× 21 338

Countries citing papers authored by K. Bertulis

Since Specialization
Citations

This map shows the geographic impact of K. Bertulis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Bertulis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Bertulis more than expected).

Fields of papers citing papers by K. Bertulis

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Bertulis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Bertulis. The network helps show where K. Bertulis may publish in the future.

Co-authorship network of co-authors of K. Bertulis

This figure shows the co-authorship network connecting the top 25 collaborators of K. Bertulis. A scholar is included among the top collaborators of K. Bertulis based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Bertulis. K. Bertulis is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tumėnas, Saulius, V. Karpus, K. Bertulis, & Hans Arwin. (2012). Dielectric function and refractive index of GaBix As1‐x (x = 0.035, 0.052, 0.075). Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(7). 1633–1635. 9 indexed citations
2.
Bertulis, K., et al.. (2012). GaAsBi Photoconductive Terahertz Detector Sensitivity at Long Excitation Wavelengths. Applied Physics Express. 5(2). 22601–22601. 31 indexed citations
3.
Nargelas, Saulius, K. Jarašiūnas, K. Bertulis, & V. Pačebutas. (2011). Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique. Applied Physics Letters. 98(8). 22 indexed citations
4.
Pačebutas, V., et al.. (2009). Low‐temperature MBE‐grown GaBiAs layers for terahertz optoelectronic applications. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(12). 2649–2651. 9 indexed citations
5.
Krotkus, A., et al.. (2009). Semiconductor materials for ultrafast optoelectronic applications. Lithuanian Journal of Physics. 49(4). 359–372. 4 indexed citations
6.
Krotkus, A., et al.. (2007). Terahertz radiation emitters and detectors. Optical Materials. 30(5). 786–788. 9 indexed citations
7.
Pačebutas, V., et al.. (2007). Characterization of low-temperature molecular-beam-epitaxy grown GaBiAs layers. Semiconductor Science and Technology. 22(7). 819–823. 32 indexed citations
8.
Pačebutas, V., et al.. (2007). Growth and characterization of GaBiAs epilayers. Optical Materials. 30(5). 756–758. 5 indexed citations
9.
Alberi, Kirstin, O. D. Dubón, W. Walukiewicz, et al.. (2007). Valence band anticrossing in GaBixAs1−x. Applied Physics Letters. 91(5). 260 indexed citations
10.
Molis, G., R. Adomavičius, A. Krotkus, et al.. (2007). Terahertz time-domain spectroscopy system based on femtosecond Yb:KGW laser. Electronics Letters. 43(3). 190–191. 22 indexed citations
11.
Bertulis, K., et al.. (2006). GaBiAs: A material for optoelectronic terahertz devices. Applied Physics Letters. 88(20). 129 indexed citations
12.
Adomavičius, R., et al.. (2005). Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications. Acta Physica Polonica A. 107(1). 128–131. 1 indexed citations
13.
Liu, Kai, A. Krotkus, K. Bertulis, Jingzhou Xu, & Xicheng Zhang. (2003). Terahertz radiation from n-type GaAs with Be-doped low-temperature-grown GaAs surface layers. Journal of Applied Physics. 94(5). 3651–3653. 18 indexed citations
14.
Adomavičius, R., A. Krotkus, K. Bertulis, et al.. (2003). Hole trapping time measurement in low-temperature-grown gallium arsenide. Applied Physics Letters. 83(25). 5304–5306. 14 indexed citations
15.
Krotkus, A., et al.. (2002). Be-doped low-temperature-grown GaAs material for optoelectronic switches. IEE Proceedings - Optoelectronics. 149(3). 111–115. 25 indexed citations
16.
Kowalski, G., et al.. (2002). On the properties of the Be-doped low temperature molecular beam epitaxy GaAs layers. Materials Science and Engineering B. 91-92. 449–452. 2 indexed citations
17.
Krotkus, A., et al.. (1999). Ultrafast carrier trapping in Be-doped low-temperature-grown GaAs. Applied Physics Letters. 75(21). 3336–3338. 33 indexed citations
18.
Dargys, A., N. Žurauskienė, & K. Bertulis. (1997). Hole tunnelling from beryllium acceptors in GaAs. Journal of Physics Condensed Matter. 9(39). L557–L559. 2 indexed citations
19.
Krotkus, A., et al.. (1995). Subpicosecond carrier lifetimes in GaAs grown by molecular beam epitaxy at low substrate temperature. Applied Physics Letters. 66(15). 1939–1941. 26 indexed citations
20.
Bertulis, K., et al.. (1980). Copper impurity behaviour in CdTe films. physica status solidi (a). 59(1). 91–99. 32 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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