E. Nebauer

517 total citations
48 papers, 414 citations indexed

About

E. Nebauer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, E. Nebauer has authored 48 papers receiving a total of 414 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 29 papers in Atomic and Molecular Physics, and Optics and 13 papers in Materials Chemistry. Recurrent topics in E. Nebauer's work include Semiconductor materials and interfaces (22 papers), Semiconductor materials and devices (22 papers) and GaN-based semiconductor devices and materials (8 papers). E. Nebauer is often cited by papers focused on Semiconductor materials and interfaces (22 papers), Semiconductor materials and devices (22 papers) and GaN-based semiconductor devices and materials (8 papers). E. Nebauer collaborates with scholars based in Germany, Bulgaria and Austria. E. Nebauer's co-authors include E. Jähne, Joachim Würfl, J. Hilsenbeck, I. Sieber, F. Fenske, W. Fuhs, B. Selle, S. Brehme, Karl W. Böer and M. Poschenrieder and has published in prestigious journals such as Journal of Applied Physics, Thin Solid Films and Electronics Letters.

In The Last Decade

E. Nebauer

43 papers receiving 384 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. Nebauer Germany	12	302	197	162	119	52	48	414
J.C. Pesant France	13	306 1.0×	153 0.8×	161 1.0×	93 0.8×	39 0.8×	34	406
M. Mamor France	13	439 1.5×	202 1.0×	333 2.1×	111 0.9×	38 0.7×	53	549
Mukunda B. Das United States	6	389 1.3×	119 0.6×	260 1.6×	167 1.4×	74 1.4×	15	491
Jer‐Shen Maa Taiwan	11	260 0.9×	114 0.6×	134 0.8×	110 0.9×	41 0.8×	38	363
S. H. Goss United States	13	272 0.9×	166 0.8×	108 0.7×	230 1.9×	40 0.8×	29	418
Shijie Xu Singapore	12	205 0.7×	287 1.5×	109 0.7×	134 1.1×	32 0.6×	40	447
W. Siegel Germany	12	354 1.2×	180 0.9×	297 1.8×	36 0.3×	17 0.3×	66	468
B.L.H. Wilson United Kingdom	4	285 0.9×	144 0.7×	221 1.4×	68 0.6×	24 0.5×	10	382
Laurent Auvray France	14	388 1.3×	147 0.7×	282 1.7×	78 0.7×	25 0.5×	49	495
L. M. Williams United States	9	259 0.9×	229 1.2×	151 0.9×	26 0.2×	49 0.9×	20	378

Countries citing papers authored by E. Nebauer

Since Specialization

Citations

This map shows the geographic impact of E. Nebauer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Nebauer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Nebauer more than expected).

Fields of papers citing papers by E. Nebauer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Nebauer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Nebauer. The network helps show where E. Nebauer may publish in the future.

Co-authorship network of co-authors of E. Nebauer

This figure shows the co-authorship network connecting the top 25 collaborators of E. Nebauer. A scholar is included among the top collaborators of E. Nebauer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Nebauer. E. Nebauer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Nebauer, E., et al.. (2002). XTEM and TFXRD investigations of ohmic Ti/Al/Ti/Au/WSiN contacts on AlGaN/GaN HFET layer systems. Semiconductor Science and Technology. 17(3). 249–254. 4 indexed citations

Würfl, Joachim, et al.. (2002). High temperature MESFET based integrated circuits operating up to 300°C. 219–222. 2 indexed citations

Nebauer, E., et al.. (2001). Damage profile of He implantation in AlGaAs laserdiode material detected by photoluminescence. Electronics Letters. 37(7). 463–464. 2 indexed citations

Hilsenbeck, J., et al.. (2000). Aging behaviour of AlGaN/GaN HFETs withadvanced ohmic and Schottky contacts. Electronics Letters. 36(11). 980–981. 23 indexed citations

Würfl, Joachim, J. Hilsenbeck, E. Nebauer, et al.. (2000). Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts. Microelectronics Reliability. 40(8-10). 1689–1693. 16 indexed citations

Fenske, F., et al.. (1999). Transparent conductive ZnO:Al films by reactive co-sputtering from separate metallic Zn and Al targets. Thin Solid Films. 343-344. 130–133. 12 indexed citations

Nebauer, E., et al.. (1998). Low resistance, thermally stable Au/Pt/Ti/WSiN ohmic contacts on n+-InGaAs/n-GaAs layer systems. Journal of Electronic Materials. 27(12). 1372–1374. 4 indexed citations

Nebauer, E., U. Merkel, Joachim Würfl, & W. Österle. (1995). RTA-Treated Ohmic Contacts To GaAs Containing WSiN Barriers. MRS Proceedings. 387. 3 indexed citations

Nebauer, E., et al.. (1994). Annealing behaviour of Au/LaB6/Au/Ni/Ge systems on n-GaAs studied by the SNMS technique. physica status solidi (a). 146(2). 697–702. 2 indexed citations

10.

Nebauer, E.. (1990). Some Remarks on the Interface Displacement in the AuGeNi-GaAs System. physica status solidi (a). 117(2). K111–K114. 1 indexed citations

11.

Nebauer, E., et al.. (1990). SNMS Study of the pt Out-Diffusion in the Au/Pt/Ti-n-GaAs System. physica status solidi (a). 119(2). K131–K134. 4 indexed citations

12.

Nebauer, E. & H. Raidt. (1986). Interface erosion at annealed MIb/AIIIBV systems the case Au/GaAs. physica status solidi (a). 97(2). 627–634. 2 indexed citations

13.

Nebauer, E., et al.. (1983). Interdiffusion Profiles of AuGe/n-GaAs Ohmic Contacts Studied by AES. physica status solidi (a). 77(2). K203–K206. 4 indexed citations

14.

Lebedev, É. A., E. Nebauer, & P. Süptitz. (1979). Broadening of electrodiffusion profiles at high electric fields in glassy As2Se3:Cu. physica status solidi (a). 51(2). K207–K211. 6 indexed citations

15.

Schneider, M. & E. Nebauer. (1978). Diffusivity and solubility of copper in LEC-GaP. physica status solidi (a). 46(1). K71–K74. 2 indexed citations

16.

Nebauer, E., et al.. (1977). Migration of Silver and Gold in Amorphous As2S3. physica status solidi (a). 40(2). K195–K198. 10 indexed citations

17.

Nebauer, E., et al.. (1977). Determination of the charge of migrating impurities from electrodiffusion profiles: The system a-As2Se3:Cu. physica status solidi (a). 43(2). 451–458. 11 indexed citations

18.

Nebauer, E.. (1973). Diffusion and solubility of phosphorus in CdS. physica status solidi (b). 60(1).

19.

Goede, O. & E. Nebauer. (1971). Te-concentration dependence of the emission intensity of CdS:Te by radioactive-tracer profile technique. physica status solidi (a). 7(2). K85–K87. 4 indexed citations

20.

Nebauer, E., et al.. (1971). Migration and incorporation of tellurium in CdS. physica status solidi (b). 48(2). 657–662. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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