S. Kraus

620 total citations
29 papers, 454 citations indexed

About

S. Kraus is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, S. Kraus has authored 29 papers receiving a total of 454 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Atomic and Molecular Physics, and Optics, 21 papers in Electrical and Electronic Engineering and 7 papers in Materials Chemistry. Recurrent topics in S. Kraus's work include Semiconductor Quantum Structures and Devices (13 papers), Quantum and electron transport phenomena (13 papers) and Semiconductor materials and devices (12 papers). S. Kraus is often cited by papers focused on Semiconductor Quantum Structures and Devices (13 papers), Quantum and electron transport phenomena (13 papers) and Semiconductor materials and devices (12 papers). S. Kraus collaborates with scholars based in Germany, Japan and Denmark. S. Kraus's co-authors include M. Bichler, W. Wegscheider, W. Dietsche, G. Böhm, G. Weimann, G. Tränkle, D. Schuh, R Wiersma, K. von Klitzing and K. von Klitzing and has published in prestigious journals such as Journal of the American Chemical Society, Physical Review Letters and Physical review. B, Condensed matter.

In The Last Decade

S. Kraus

29 papers receiving 446 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Kraus Germany 12 344 237 148 123 41 29 454
A. Chernikov Germany 14 329 1.0× 342 1.4× 65 0.4× 205 1.7× 90 2.2× 29 516
I-Po Hong Germany 8 294 0.9× 112 0.5× 115 0.8× 128 1.0× 44 1.1× 8 370
Cesar Lazo Germany 10 398 1.2× 112 0.5× 110 0.7× 275 2.2× 50 1.2× 13 504
H. H. Lin Taiwan 11 189 0.5× 192 0.8× 58 0.4× 96 0.8× 13 0.3× 27 336
Ian Rousseau Switzerland 8 140 0.4× 234 1.0× 76 0.5× 217 1.8× 31 0.8× 14 379
J. N. B. Rodrigues Singapore 12 388 1.1× 132 0.6× 78 0.5× 511 4.2× 45 1.1× 17 604
M. Utz Germany 12 268 0.8× 155 0.7× 71 0.5× 179 1.5× 85 2.1× 27 417
A. Makarovski United States 7 248 0.7× 110 0.5× 57 0.4× 223 1.8× 36 0.9× 9 380
A. Sonntag Germany 11 319 0.9× 143 0.6× 88 0.6× 108 0.9× 75 1.8× 15 376
S. Hövel Germany 11 293 0.9× 241 1.0× 63 0.4× 137 1.1× 40 1.0× 12 445

Countries citing papers authored by S. Kraus

Since Specialization
Citations

This map shows the geographic impact of S. Kraus's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Kraus with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Kraus more than expected).

Fields of papers citing papers by S. Kraus

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Kraus. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Kraus. The network helps show where S. Kraus may publish in the future.

Co-authorship network of co-authors of S. Kraus

This figure shows the co-authorship network connecting the top 25 collaborators of S. Kraus. A scholar is included among the top collaborators of S. Kraus based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Kraus. S. Kraus is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kraus, S., J. Fischer, Marco Bianchi, et al.. (2022). Single-crystal graphene on Ir(110). Physical review. B.. 105(16). 8 indexed citations
2.
Kraus, S., Marco Bianchi, Shigeru Tsukamoto, et al.. (2022). Uniaxially Aligned 1D Sandwich-Molecular Wires: Electronic Structure and Magnetism. The Journal of Physical Chemistry C. 126(6). 3140–3150. 7 indexed citations
3.
Kraus, S., Christian Krämer, Konstantin Amsharov, et al.. (2022). Selecting the Reaction Path in On-Surface Synthesis through the Electron Chemical Potential in Graphene. Journal of the American Chemical Society. 144(24). 11003–11009. 2 indexed citations
4.
Kraus, S., Shigeru Tsukamoto, Vasile Caciuc, et al.. (2022). Tailoring magnetic anisotropy by graphene-induced selective skyhook effect on 4f-metals. Nanoscale. 14(20). 7682–7691. 5 indexed citations
5.
Kraus, S., Katharina Ollefs, Lucas M. Arruda, et al.. (2019). Europium Cyclooctatetraene Nanowire Carpets: A Low-Dimensional, Organometallic, and Ferromagnetic Insulator. The Journal of Physical Chemistry Letters. 10(5). 911–917. 21 indexed citations
6.
Wiersma, R, S. Kraus, W. Dietsche, et al.. (2004). Activated Transport in the Separate Layers that Form theνT=1Exciton Condensate. Physical Review Letters. 93(26). 266805–266805. 98 indexed citations
7.
Muraki, Koji, S. Kraus, W. Dietsche, et al.. (2004). Coulomb Drag as a Probe of the Nature of Compressible States in a Magnetic Field. Physical Review Letters. 92(24). 246801–246801. 11 indexed citations
8.
Kraus, S., O. Stern, W. Dietsche, et al.. (2002). From Quantum Hall Ferromagnetism to Huge Longitudinal Resistance at the2/3Fractional Quantum Hall State. Physical Review Letters. 89(26). 266801–266801. 45 indexed citations
9.
Kraus, S., W. Dietsche, K. von Klitzing, et al.. (2002). Negative magneto-drag of double layer 2DEGs. Physica E Low-dimensional Systems and Nanostructures. 12(1-4). 119–124. 3 indexed citations
10.
Xu, Dong-Hui, S. Kraus, Wilhelm Klein, et al.. (2002). Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite channels and f/sub max/ of 350 GHz. 737–740. 3 indexed citations
11.
Bachem, K. H., et al.. (1998). Advantages of Al-free GalnP/lnGaAs PHEMTsfor power applications. Electronics Letters. 34(6). 590–592. 5 indexed citations
12.
Xu, Dong-Hui, S. Kraus, G. Böhm, et al.. (1998). Design and fabrication of double modulation doped InAlAs/lnGaAs/InAs heterojunction FETs for high-speed and millimeter-wave applications. IEEE Transactions on Electron Devices. 45(1). 21–30. 27 indexed citations
13.
Xu, Dong-Hui, S. Kraus, G. Böhm, et al.. (1997). High-performance double-modulation-doped InAlAs/InGaAs/InAs HFETs. IEEE Electron Device Letters. 18(7). 323–326. 8 indexed citations
14.
Xu, D., S. Kraus, G. Böhm, et al.. (1997). 2 S/mm Transconductance InAs-Inserted-Channel Modulation Doped Field Effect Transistors with a Very Close Gate-to-Channel Separation of 14.5 nm. Japanese Journal of Applied Physics. 36(4B). L470–L470. 9 indexed citations
15.
Böhm, G., et al.. (1997). MBE growth of double-sided doped HEMTs with an InAs layer inserted in the channel. Journal of Crystal Growth. 175-176. 915–918. 18 indexed citations
16.
Xu, D., et al.. (1997). 0.15 µm double modulation doped InAs-inserted-channelMODFETs: Gate recess for optimum RF performances. Electronics Letters. 33(6). 532–533. 4 indexed citations
17.
Xu, D., S. Kraus, Wilhelm Klein, et al.. (1996). Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with a novel composite channels design. IEEE Electron Device Letters. 17(6). 273–275. 61 indexed citations
18.
Xu, D., S. Kraus, Wilhelm Klein, et al.. (1996). Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite channels and 350-GHzfmax with 160-GHzfT. Microwave and Optical Technology Letters. 11(3). 145–147. 5 indexed citations
19.
Xu, Dong-Hui, et al.. (1996). Reduction of the output conductance in InAlAs/InGaAs HEMTs with 0.15 /spl mu/m gates. 33. 470–473. 1 indexed citations
20.
Klein, Wilhelm, G. Böhm, S. Kraus, et al.. (1995). Molecular beam epitaxial growth of pseudomorphic InAlAs/InGaAs high electron mobility transistors with high cut-off frequencies. Journal of Crystal Growth. 150. 1252–1255. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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