D. Pardo

2.1k citations

96 papers · 1.6k indexed · h-index 20

Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices 45
- Quantum and electron transport phenomena 33
Electrical and Electronic Engineering top 5%
- Advancements in Semiconductor Devices and Circuit Design 69
- Semiconductor materials and devices 50
- Terahertz technology and applications 13
- Radio Frequency Integrated Circuit Design 11
- Integrated Circuits and Semiconductor Failure Analysis 8
Condensed Matter Physics top 10%
Astronomy and Astrophysics top 10%
- Superconducting and THz Device Technology 14
Media Technology top 5%

Co-authors: T. González J. Mateos B. G. Vasallo A. Cappy L. Reggiani S. Bollaert María J. Martín A. García‐Alonso
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Condensed Matter Physics
Journals: Semiconductor Science and Technology (16 papers)Journal of Applied Physics (12 papers)IEEE Transactions on Electron Devices (11 papers)
Partner nations: Spain France Italy

In The Last Decade

D. Pardo

93 papers receiving 1.5k citations

Peers

Countries citing papers authored by D. Pardo

Since Specialization

Citations

This map shows the geographic impact of D. Pardo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Pardo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Pardo more than expected).

Fields of papers citing papers by D. Pardo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Pardo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Pardo. The network helps show where D. Pardo may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. Pardo, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Pardo Line = papers co-authored together D. Pardo links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Frequency response of T-shaped Three Branch Junctions as Mixers and Detectors HAL (Le Centre pour la Communication Scientifique Directe) ·I. Íñiguez-de-la-Torre,T. González,D. Pardo,Elisa Briones,Yannick Roelens,S. Bollaert,J. Mateos	2009	2
2	Monte Carlo analysis of thermal effects in GaN HEMTs J. Mateos,S. Pérez,D. Pardo,T. González	2009	5
3	Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb Journal of Physics Conference Series ·I. Íñiguez-de-la-Torre,Helena Rodilla,J. Mateos,D. Pardo,Aimin Song,T. González	2009	11
4	Ultra-Low Power Passive UHF RFID for Wireless Sensor Networks Acceda (Universidad de Las Palmas de Gran Canaria) ·P B Sextro,Kyoungtaeg Lee,D. Pardo,Roc Berenguer	2008	1
5	Monte Carlo simulation of AlGaN/GaN heterostructures J. Mateos,S. Pérez,I. Íñiguez-de-la-Torre,D. Pardo,T. González	2007	1
6	A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs IEEE Transactions on Electron Devices ·Raúl Rengel,María J. Martín,T. González,J. Mateos,D. Pardo,G. Dambrine,Jean‐Pierre Raskin,F. Danneville	2006	13
7	Monte Carlo Comparison Between InP-Based Double-Gate and Standard HEMTs B. G. Vasallo,Mabel Stevenson,S. Bollaert,A. Cappy,T. González,D. Pardo,J. Mateos	2006	7
8	Numerical modeling of TeraHertz electronic devices Journal of Computational Electronics ·L. Varani,C. Palermo,J.‐F. Millithaler,J. C. Vaissière,E. Starikov,P. Shiktorov,V. Gruz̆inskis,J. Mateos,S. Pérez,D. Pardo,T. González	2006	8
9	Ultra Fast Gunn Effect at THz Frequencies in HEMTs J. Mateos,S. Pérez,D. Pardo,T. González	2006	2
10	Kink effect in InAlAs/InGaAs short-channel HEMTs: influence on the dynamic and noise performance B. G. Vasallo,J. Mateos,D. Pardo,T. González	2005	0
11	Operation of a novel nanoscale unipolar rectifying diode J. Mateos,B. G. Vasallo,D. Pardo,T. González,Aimin Song	2005	3
12	Design Optimization of AlInAs–GaInAs HEMTs for Low-Noise Applications IEEE Transactions on Electron Devices ·J. Mateos,T. González,D. Pardo,S. Bollaert,T. Parenty,A. Cappy	2004	18
13	Design Optimization of AlInAs–GaInAs HEMTs for High-Frequency Applications IEEE Transactions on Electron Devices ·Zhenxiao Ren,T. González,D. Pardo,S. Bollaert,T. Parenty,A. Cappy	2004	23
14	2D ensemble Monte Carlo modelling of bulk and FD SOI MOSFETs: active layer thickness and noise performance Semiconductor Science and Technology ·Raúl Rengel,D. Pardo,María J. Martín	2004	2
15	Monte Carlo Investigation of Shot-noise Suppression in Nondegenerate Ballistic and Diffusive Transport Regimes Australian Journal of Physics ·L. Reggiani,A. Reklaǐtis,T. González,J. Mateos,D. Pardo,O. M. Bulashenko	2000	18
16	Microscopic analysis of the influence of Ge profiles on the current-noise operation mode of n-Si/p-Si_1-xGe_xheterostructures Semiconductor Science and Technology ·María J. Martín,D. Pardo,J.E. Velázquez-Pérez	2000	5
17	Microscopic analysis of voltage noise operation mode in SiGe/Si bipolar heterojunctions: Influence of the SiGe strained layer Journal of Applied Physics ·María J. Martín,D. Pardo,J.E. Velázquez-Pérez	2000	2
18	Spatiotemporal correlation of conduction current fluctuations within a hydrodynamic-Langevin scheme Applied Physics Letters ·P. Shiktorov,E. Starikov,V. Gruz̆inskis,T. González,J. Mateos,D. Pardo,L. Reggiani,L. Varani,J. C. Vaissière,J. P. Nougier	1999	3
19	Microscopic analysis of the influence of strain and band-gap offsets on noise characteristics in Si1−xGex/Si heterojunctions Journal of Applied Physics ·Arialys Hernández,D. Pardo,J.E. Velázquez-Pérez	1998	14
20	Hydrodynamic and Monte Carlo simulation of steady-state transport and noise in submicrometre silicon structures Semiconductor Science and Technology ·E. Starikov,P. Shiktorov,V. Gruz̆inskis,T. González,María J. Martín,D. Pardo,L. Reggiani,L. Varani	1996	16

About D. Pardo

D. Pardo is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Astronomy and Astrophysics, having authored 96 papers that have together received 1.6k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (69 papers), Semiconductor materials and devices (50 papers), Semiconductor Quantum Structures and Devices (45 papers), Quantum and electron transport phenomena (33 papers), Superconducting and THz Device Technology (14 papers), Terahertz technology and applications (13 papers), Radio Frequency Integrated Circuit Design (11 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (994 citations), Electrical and Electronic Engineering (1.4k citations) and Condensed Matter Physics (159 citations). D. Pardo has collaborated with scholars based in Spain, France and Italy. Frequent co-authors include T. González, J. Mateos, B. G. Vasallo, A. Cappy, L. Reggiani, S. Bollaert, María J. Martín, A. García‐Alonso, Héctor Solar and Roc Berenguer. Their work appears in journals such as Semiconductor Science and Technology, Journal of Applied Physics, IEEE Transactions on Electron Devices, Applied Physics Letters and Physical review. B, Condensed matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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