C. Geng

1.1k total citations
51 papers, 847 citations indexed

About

C. Geng is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, C. Geng has authored 51 papers receiving a total of 847 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Atomic and Molecular Physics, and Optics, 37 papers in Electrical and Electronic Engineering and 15 papers in Materials Chemistry. Recurrent topics in C. Geng's work include Semiconductor Quantum Structures and Devices (36 papers), Photonic and Optical Devices (15 papers) and Semiconductor Lasers and Optical Devices (14 papers). C. Geng is often cited by papers focused on Semiconductor Quantum Structures and Devices (36 papers), Photonic and Optical Devices (15 papers) and Semiconductor Lasers and Optical Devices (14 papers). C. Geng collaborates with scholars based in Germany, United States and Japan. C. Geng's co-authors include F. Scholz, P. Ernst, H. Schweizer, A. Mascarenhas, Yong Zhang, A. Hangleiter, M. Moser, H. Schweizer, R. Wirth and Andreas Moritz and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

C. Geng

50 papers receiving 799 citations

Peers

C. Geng

AMPO

EEE

CMP

J. L. de Miguel United States

T. P. Chin United States

J. P. Harbison United States

P. Kočevar Austria

Scott Chalmers United States

R.W. Glew United Kingdom

R. M. Mikulyak United States

Avid Kamgar United States

E. D. Beebe United States

G. Oelgart Germany

J. L. de Miguel United States

C. Geng

704 ×1.0

AMPO

663 ×1.1

EEE

235 ×0.8

69 ×0.7

CMP

43 ×0.6

Citations per year, relative to C. Geng C. Geng (= 1×) peers J. L. de Miguel

Countries citing papers authored by C. Geng

Since Specialization

Citations

This map shows the geographic impact of C. Geng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Geng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Geng more than expected).

Fields of papers citing papers by C. Geng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Geng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Geng. The network helps show where C. Geng may publish in the future.

Co-authorship network of co-authors of C. Geng

This figure shows the co-authorship network connecting the top 25 collaborators of C. Geng. A scholar is included among the top collaborators of C. Geng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Geng. C. Geng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Golding, T. D., S. C. Moss, Y. Zhang, et al.. (2008). Publisher's Note: X-ray diffraction and excitation photoluminescence analysis of ordered GaInP [Phys. Rev. B58, 15355 (1998)]. Physical Review B. 78(11).

Moser, M., et al.. (2005). Optical Characterization of GalnP Layers. 3. 210–211. 1 indexed citations

Yamashita, K., Kunishige Oe, Takashi Kita, et al.. (2005). Electronic Structure of Ordered Ga_0.5In_0.5P/GaAs Heterointerface Studied by Raman-Scattering and Photoluminescence-Excitation Measurements. Japanese Journal of Applied Physics. 44(10R). 7390–7390. 1 indexed citations

Kita, Takashi, K. Yamashita, T. Nishino, et al.. (2000). Cooling Process of Hot Excitons in Ordered Ga_0.5In_0.5P. Japanese Journal of Applied Physics. 39(S1). 328–328. 2 indexed citations

Geng, C., et al.. (1997). Wide-range tunability of GaInP-AlGaInP DFB lasers with superstructure gratings. IEEE Photonics Technology Letters. 9(1). 14–16. 17 indexed citations

Englert, A., et al.. (1997). Implantation-induced disordering of CuPtB-ordered GaInP. Journal of Applied Physics. 82(3). 1042–1052. 2 indexed citations

Cheong, Hyeonsik, A. Mascarenhas, P. Ernst, & C. Geng. (1997). Effects of spontaneous ordering on Raman spectra ofGaInP2. Physical review. B, Condensed matter. 56(4). 1882–1887. 41 indexed citations

Ulbrich, R. G., et al.. (1997). Micro Photoluminescence Studies on Partially Ordered (GaIn)P: Evidence for Intrinsic Quantum Dots. physica status solidi (a). 164(1). 459–465. 13 indexed citations

Ernst, P., Yong Zhang, F. A. J. M. Driessen, et al.. (1997). Magnetoluminescence study on the effective mass anisotropy of CuPtB-ordered GaInP2 alloys. Journal of Applied Physics. 81(6). 2814–2817. 26 indexed citations

10.

Kuhn, Jonas, Andreas Moritz, C. Geng, et al.. (1997). Dynamic properties of GaInP multielectrode ridge-waveguide lasers. Semiconductor Science and Technology. 12(4). 439–442. 5 indexed citations

11.

Mestres, N., F. Alsina, J. Pascual, et al.. (1996). Edge-on micro-Raman assessment of trigonal modes in partially ordered GaInP2. Physical review. B, Condensed matter. 54(24). 17754–17758. 16 indexed citations

12.

Moritz, Andreas, R. Wirth, C. Geng, F. Scholz, & A. Hangleiter. (1996). Birefringence and tilted modes in ordered GaInP/AlGaInP waveguides and lasers. Applied Physics Letters. 68(9). 1217–1219. 15 indexed citations

13.

Englert, A., et al.. (1995). Post Epitaxial Disordering of CuPt_B Ordered AIGaInP/GaInP for Microstructuring. MRS Proceedings. 417. 3 indexed citations

14.

Geng, C., et al.. (1995). Fabrication and operation of first-orderGaInP/AlGaInP DFB lasers at roomtemperature. Electronics Letters. 31(5). 367–368. 21 indexed citations

15.

Zhang, Yong, P. Ernst, F. A. J. M. Driessen, et al.. (1995). A Polarization Study of Ordered GaInP₂. MRS Proceedings. 417. 1 indexed citations

16.

Geiger, Dorin, et al.. (1995). Noise in channel doped GaInP/InGaAs HFET devices. Electronics Letters. 31(15). 1295–1297. 5 indexed citations

17.

Geng, C., et al.. (1995). Electron cyclotron resonance (ECR) plasma-assisted bandgap engineering in GaInP/AlGaInP. Microelectronic Engineering. 27(1-4). 445–448. 4 indexed citations

18.

Moser, M., et al.. (1994). Refractive index of (AlxGa1−x)0.5In0.5P grown by metalorganic vapor phase epitaxy. Applied Physics Letters. 64(2). 235–237. 36 indexed citations

19.

Tsai, Chun‐Wei, M. Moser, C. Geng, et al.. (1994). Interface characteristics of GaInP/GaAs double heterostructures grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 145(1-4). 786–791. 44 indexed citations

20.

Schweizer, H., et al.. (1994). Effects of strain and GaInP₂superlattice ordering on laser polarization. Semiconductor Science and Technology. 9(6). 1268–1271. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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