F. Binet

485 total citations
11 papers, 404 citations indexed

About

F. Binet is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Automotive Engineering. According to data from OpenAlex, F. Binet has authored 11 papers receiving a total of 404 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Condensed Matter Physics, 9 papers in Atomic and Molecular Physics, and Optics and 1 paper in Automotive Engineering. Recurrent topics in F. Binet's work include GaN-based semiconductor devices and materials (10 papers), Semiconductor Quantum Structures and Devices (9 papers) and Quantum and electron transport phenomena (3 papers). F. Binet is often cited by papers focused on GaN-based semiconductor devices and materials (10 papers), Semiconductor Quantum Structures and Devices (9 papers) and Quantum and electron transport phenomena (3 papers). F. Binet collaborates with scholars based in Germany, France and Canada. F. Binet's co-authors include F. Scholz, E. Rosencher, V. Härle, J.-Y. Duboz, J. Off, Jean‐Yves Duboz, Nicolas Laurent, O. Briot, R.L. Aulombard and J. Y. Duboz and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

F. Binet

10 papers receiving 389 citations

Peers

Countries citing papers authored by F. Binet

Since Specialization

Citations

This map shows the geographic impact of F. Binet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Binet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Binet more than expected).

Fields of papers citing papers by F. Binet

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Binet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Binet. The network helps show where F. Binet may publish in the future.

Co-authorship network of co-authors of F. Binet

This figure shows the co-authorship network connecting the top 25 collaborators of F. Binet. A scholar is included among the top collaborators of F. Binet based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Binet. F. Binet is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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11 of 11 papers shown

#	Work	Indexed citations
1	The sustainability of recycled polylactic acid via fused filament fabrication: environmental impacts across cycles 2025 ·The International Journal of Advanced Manufacturing Technology ·(unknown), (unknown), (unknown), Rouhollah D. Farahani, F. Binet, Sampada Bodkhe, Daniel Therriault, Samira Keivanpour	1
2	High-excitation photoluminescence in GaN: Hot-carrier effects and the Mott transition 1999 ·Physical review. B, Condensed matter ·F. Binet, J.-Y. Duboz, J. Off, F. Scholz	89
3	Carrier capture in InGaN quantum wells and hot carrier effects in GaN 1999 ·Materials Science and Engineering B ·F. Binet, J.-Y. Duboz, C. Grattepain, F. Scholz, J. Off	4
4	Realization and optical characterization of etched mirror facets in GaN cavities 1998 ·Applied Physics Letters ·F. Binet, J.-Y. Duboz, Nicolas Laurent, (unknown), P. Collot, (unknown), O. Briot, R.L. Aulombard	24
5	Diffusion length of photoexcited carriers in GaN 1997 ·Materials Science and Engineering B ·J.-Y. Duboz, F. Binet, Daniel Dolfi, Nicolas Laurent, F. Scholz, J. Off, A. Sohmer, O. Briot, Bernard Gil	37
6	Optical pumping in nitride cavities with etched mirror facets 1997 ·Materials Science and Engineering B ·F. Binet, J.-Y. Duboz, Nicolas Laurent, (unknown), P. Collot, (unknown), O. Briot, Bernard Gil, F. Scholz, J. Off, A. Sohmer	2
7	Electric field effects on excitons in gallium nitride 1997 ·Materials Science and Engineering B ·J.-Y. Duboz, F. Binet, E. Rosencher, F. Scholz, V. Härle	8
8	Properties of a photovoltaic detector based on an n-type GaN Schottky barrier 1997 ·Journal of Applied Physics ·F. Binet, J. Y. Duboz, Nicolas Laurent, E. Rosencher, O. Briot, R.L. Aulombard	48
9	Mechanisms of recombination in GaN photodetectors 1996 ·Applied Physics Letters ·F. Binet, Jean‐Yves Duboz, E. Rosencher, F. Scholz, V. Härle	133
10	Electric field effects on excitons in gallium nitride 1996 ·Physical review. B, Condensed matter ·F. Binet, J.-Y. Duboz, E. Rosencher, F. Scholz, V. Härle	23
11	Influence of Surface Defects on the Characteristics of GaN Schottky Diodes 1996 ·MRS Proceedings ·J. Y. Duboz, F. Binet, Nicolas Laurent, E. Rosencher, F. Scholz, V. Härle, O. Briot, Bernard Gil, R.L. Aulombard	35

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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